ABSTRACT
Two-dimensional materials (2DMs) have exhibited remarkably tunable optical characteristics, which have been applied for significant applications in communications, sensing, and computing. However, the reported tunable optical properties of 2DMs are almost volatile, impeding them in the applications of multifarious emerging frameworks such as programmable operation and neuromorphic computing. In this work, nonvolatile electro-optic response is developed by the graphene-Al2O3-In2Se3 heterostructure integrating with microring resonators (MRRs). In such compact devices, the optical absorption coefficient of graphene is substantially tuned by the out-of-plane ferroelectric polarization in α-In2Se3, resulting in a nonvolatile optical transmission in MRRs. This work demonstrates that integrating graphene with ferroelectric materials paves the way to develop nonvolatile devices in photonic circuits for emerging applications such as optical neural networks.
ABSTRACT
The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe2) mid-infrared photodetector, and further improve detection performance by using PtTe2-graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe2 photodetector, with an external bias voltage of -10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe2-graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 µW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 µW.
ABSTRACT
Organic heterostructures (OHs) with multi-segments exhibit special optoelectronic properties compared with monomeric structures. Nevertheless, the synthesis of multi-block heterostructures remains challenging due to compatibility issues between segment parts, which restricts their application in optical waveguides and integrated optics. Herein, we demonstrate programmable in-situ co-assembly engineering, combining multi-step spontaneous self-assembly processes to promote the synthesis of multi-block heterostructures with a rational arrangement of three or more segments. The rational design of segments enables exciton manipulation and ensures optical waveguides and proper output among the multi-segment OHs. This work enables the controllable growth of segments within multi-block OHs, providing a pathway to construct complex OHs for the rational development of future optical applications.
ABSTRACT
Flexible photodetectors are pivotal in contemporary optoelectronic technology applications, such as data reception and image sensing, yet their performance and yield are often hindered by the challenge of heterogeneous integration between photoactive materials and flexible substrates. Here, we showcase the potential of an electrostatic force-assisted transfer printing technique for integrating Si PIN photodiodes onto flexible substrates. This clean and dry process eliminates the need for chemical etchants, making it a highly desirable method for manufacturing high-performance flexible photodetector arrays, expanding their widespread applications in electronic eyes, robotics, and human-machine interaction. As a demonstration, a 5 × 5 flexible Si photodetector focal plane array is constructed for imaging sensors and shaped into a convex semicylindrical form to achieve a π field of view with long-term mechanical and thermal stability. Such an approach provides a high yield rate and consistent performance, with the single photodetector demonstrating exceptional characteristics, including a responsivity of 0.61 A/W, a response speed of 39.77 MHz, a linear dynamic range of 108.53 dB, and a specific detectivity of 2.75 × 1012 Jones at an applied voltage of -3 V at 940 nm.
ABSTRACT
Herein, a facile strategy was established to build mechanoresponsive luminogens with high sensitivity to substituents and positional effects. Even in slightly different structures, distinct optical phenomena, including fluorescence efficiency and mechano-responsive properties, were clearly present. Outstanding mechanical-induced emission enhancement (5-100 times) properties and reversibility makes for promising applications in pressure sensors and OLEDs.
ABSTRACT
Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.
ABSTRACT
Organic luminescent materials are indispensable in optoelectronic displays and solid-state luminescence applications. Compared with single-component, multi-component crystalline materials can improve optoelectronic characteristics. This work forms a series of full-spectrum tunable luminescent charge-transfer (CT) cocrystals ranging from 400 to 800 nm through intermolecular collaborative self-assembly. What is even more interesting is that o-TCP-Cor(x)-Pe(1-x), p-TCP-Cor(x)-Pe(1-x), and o-TCP-AN(x)-TP(1-x) alloys are prepared based on cocrystals by doping strategies, which correspondingly achieve the stepless color change from blue (CIE [0.22, 0.44]) to green (CIE [0.16, 0.14]), from green (CIE [0.27, 0.56]) to orange (CIE [0.58, 0.42]), from yellow (CIE [0.40, 0.57]) to red (CIE [0.65, 0.35]). The work provides an efficient method for precisely synthesizing new luminescent organic semiconductor materials and lays a solid foundation for developing advanced organic solid-state displays.
ABSTRACT
An ultra-compact on-chip spectrometer was demonstrated based on an array of add-drop micro-donut resonators (MDRs). The filter array was thermally tuned by a single TiN microheater, enabling simultaneous spectral scanning across all physical channels. The MDR was designed to achieve large free spectral ranges with multimode waveguide bends and asymmetric coupling waveguides, covering a spectral range of 40â nm at the telecom waveband with five physical channels (which could be further expanded). Benefiting from the ultra-small device footprint of 150 µm2, the spectrometer achieved a low power consumption of 16â mW. Additionally, it is CMOS-compatible and enables mass fabrication, which may have potential applications in personal terminals and the consumer industry.
ABSTRACT
Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.
ABSTRACT
Ultra-high extinction ratio (ER) optical modulation is crucial for achieving high-performance fiber-optic distributed acoustic sensing (DAS) for various applications. Bulky acousto-optical modulators (AOM) as one of the key devices in DAS have been used for many years, but their relatively large volume and high power consumption are becoming the bottlenecks to hinder the development of ultra-compact and energy-efficient DAS systems that are highly demanded in practice. Here, an on-chip silicon electro-optical modulator (EOM) based on multiple coupled microrings is demonstrated with ultra-high ER of up to 68 dB while the device size and power consumption are only 260 × 185 µm2 and 3.6 mW, respectively, which are at least two orders of magnitude lower than those of a typical AOM. Such an on-chip EOM is successfully applied to DAS with an ultra-high sensitivity of -71.2 dB rad2/Hz (4 pε/âHz) and a low spatial crosstalk noise of -68.1 dB rad2/Hz, which are very similar to those using an AOM. This work may pave the way for realization of next-generation ultra-compact DAS systems by integration of on-chip opto-electronic devices and modules with the capability of mass-production.
ABSTRACT
In this paper, we demonstrate a broadband Mach-Zehnder interferometer optical switch based on polycrystalline silicon (poly-Si), which enables the development of multilayer photonics integrated circuits. The poly-Si is deposited under a low temperature of 620 °C to avoid unexpected thermal stress and influence on optoelectronic performance. By introducing a π/2 phase shifter and a push-pull configuration, the switch achieved low power consumption and loss caused by carrier plasma absorption (CPA). The switch operates effectively in both "Bar" and "Cross" states at voltages of -3.35â V and 3.85â V. The power consumptions are 7.98â mW and 9.39â mW, respectively. The on-chip loss is 5.9 ± 0.4â dB at 1550â nm, and the crosstalk is below -20â dB within the C-band. The switch exhibits a 10%-90% rise time of 7.7 µs and a 90%-10% fall time of 3.4 µs at 1550â nm. As far as we know, it is the first demonstration of a poly-Si switch on an 8-inch wafer pilot-line. The low-temperature deposited poly-Si switch is promising for multilayer active photonic devices and photonic-electronic applications.
ABSTRACT
Integrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory. It is also experimentally presented by integrating non-volatile phase change material (PCM) Sb2Se3 on silicon to realize compact, low-loss, and broadband engineering operations. The fabricated filter holds a compact footprint of 0.5 µm × 43.5 µm and maintains a low insertion loss of < 0.5â dB after multiple levels of engineering to achieve crystallization. The filter is able to switch from a low-loss transmission state to the Bragg reflection state, making it a favorable solution for large-scale reconfigurable photonic circuits. With a switching extinction ratio over 30â dB at 1504.85â nm, this hybrid filter breaks the tradeoff between insertion loss and tuning range. These results reveal its potential as a new candidate for a basic element in large-scale non-volatile reconfigurable systems.
ABSTRACT
Photonic mechanical sensors offer several advantages over their electronic counterparts, including immunity to electromagnetic interference, increased sensitivity, and measurement accuracy. Exploring flexible mechanical sensors on deformable substrates provides new opportunities for strain-optical coupling operations. Nevertheless, existing flexible photonics strategies often require cumbersome signal collection and analysis with bulky setups, limiting their portability and affordability. To address these challenges, we propose a waveguide-integrated flexible mechanical sensor based on cascaded photonic crystal microcavities with inherent deformation and biaxial tensile state analysis. Leveraging the advanced multiplexing capability of the sensor, for the first time, we successfully demonstrate 2D shape reconstruction and quasi-distributed strain sensing with 110 µm spatial resolution. Our microscale mechanical sensor also exhibits exceptional sensitivity with a detected force level as low as 13.6 µN in real-time measurements. This sensing platform has potential applications in various fields, including biomedical sensing, surgical catheters, aircraft and spacecraft engineering, and robotic photonic skin development.
ABSTRACT
Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 109 Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.
ABSTRACT
In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (â¼1.3-1.6 µm) to the 2 µm band (1.8-2.1 µm). However, the largest bandwidth (â¼30 GHz) of the current high-speed photodetectors for the 2 µm window is considerably less than the developed 1.55 µm band photodetectors based on III-V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 µm wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 µm. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 µm exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future high-speed optical communication at both the 2 and 1.55 µm bands.
ABSTRACT
Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and ß' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the ß phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer ß'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
ABSTRACT
Mechanically flexible photonic devices are critical components of novel bio-integrated optoelectronic and high-end wearable systems, in which thermo-optic switches (TOSs) as optical signal control devices are crucial. In this paper, flexible titanium oxide (TiO2) TOSs based on a Mach-Zehnder interferometer (MZI) structure were demonstrated around 1310â nm for, it is believed, the first time. The insertion loss of flexible passive TiO2 2 × 2 multi-mode interferometers (MMIs) is -3.1â dB per MMI. The demonstrated flexible TOS achieves power consumption (Pπ) of 0.83â mW, compared with its rigid counterpart, for which Pπ is decreased by a factor of 18. The proposed device could withstand 100 consecutive bending operations without noticeable degradation in TOS performance, indicating excellent mechanical stability. These results provide a new perspective for designing and fabricating flexible TOSs for flexible optoelectronic systems in future emerging applications.
Subject(s)
Optical Devices , Eye , PhotonsABSTRACT
Organic hierarchical branch micro/nanostructures constituted by single crystals with inherent multichannel characteristics exhibit superior potential in regulating photon transmission for photonic circuits. However, organic branch micro/nanostructures with precise branch positions are extremely difficult to achieve due to the randomness of the nucleation process. Herein, by taking advantage of the dislocation stress field-impurity interaction that solute molecules deposit preferentially along the dislocation line, twinning deformation was introduced into microcrystals to induce oriented nucleation sites, and ultimately organic branch microstructures with controllable branch sites were fabricated. The growth mechanism of these controllable single crystals with an angle of 140° between trunk and branch is attributed to the low lattice mismatching ratio (η) of 4.8%. These as-prepared hierarchical branch single crystals with asymmetrical optical waveguide characteristics have been demonstrated as an optical logic gate with multiple input/out channels, which provides a route to command the nucleation sites and offers potential applications in the organic optoelectronics at the micro/nanoscale.
ABSTRACT
The combination of multiple components or structures into integrated micro/nanostructures for practical application has been pursued for many years. Herein, a series of hierarchical organic microwires with branch, core/shell (C/S), and branch C/S structures are successfully constructed based on organic charge transfer (CT) cocrystals with structural similarity and physicochemical tunability. By regulating the intermolecular CT interaction, single microwires and branch microstructures can be integrated into the C/S and branch C/S structures, respectively. Significantly, the integrated branch C/S microwires, with multicolor waveguide behavior and branch structure multichannel waveguide output characteristics, can function as an optical logic gate with multiple encoding features. This work provides useful insights for creating completely new types of organic microstructures for integrated optoelectronics.