Regulable high-contrast mechanofluorochromic enhancement behaviour based on substituent effects.

Herein, a facile strategy was established to build mechanoresponsive luminogens with high sensitivity to substituents and positional effects. Even in slightly different structures, distinct optical phenomena, including fluorescence efficiency and mechano-responsive properties, were clearly present. Outstanding mechanical-induced emission enhancement (5-100 times) properties and reversibility makes for promising applications in pressure sensors and OLEDs.

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics.

Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.

Precise Synthesis of Organic Cocrystal Alloys with Full-Spectrum Emission Characteristics for the Stepless Color Changing Display.

Organic luminescent materials are indispensable in optoelectronic displays and solid-state luminescence applications. Compared with single-component, multi-component crystalline materials can improve optoelectronic characteristics. This work forms a series of full-spectrum tunable luminescent charge-transfer (CT) cocrystals ranging from 400 to 800 nm through intermolecular collaborative self-assembly. What is even more interesting is that o-TCP-Cor(x)-Pe(1-x), p-TCP-Cor(x)-Pe(1-x), and o-TCP-AN(x)-TP(1-x) alloys are prepared based on cocrystals by doping strategies, which correspondingly achieve the stepless color change from blue (CIE [0.22, 0.44]) to green (CIE [0.16, 0.14]), from green (CIE [0.27, 0.56]) to orange (CIE [0.58, 0.42]), from yellow (CIE [0.40, 0.57]) to red (CIE [0.65, 0.35]). The work provides an efficient method for precisely synthesizing new luminescent organic semiconductor materials and lays a solid foundation for developing advanced organic solid-state displays.

Ultra-compact scalable spectrometer with low power consumption.

An ultra-compact on-chip spectrometer was demonstrated based on an array of add-drop micro-donut resonators (MDRs). The filter array was thermally tuned by a single TiN microheater, enabling simultaneous spectral scanning across all physical channels. The MDR was designed to achieve large free spectral ranges with multimode waveguide bends and asymmetric coupling waveguides, covering a spectral range of 40 nm at the telecom waveband with five physical channels (which could be further expanded). Benefiting from the ultra-small device footprint of 150 µm2, the spectrometer achieved a low power consumption of 16 mW. Additionally, it is CMOS-compatible and enables mass fabrication, which may have potential applications in personal terminals and the consumer industry.

On-chip silicon electro-optical modulator with ultra-high extinction ratio for fiber-optic distributed acoustic sensing.

Ultra-high extinction ratio (ER) optical modulation is crucial for achieving high-performance fiber-optic distributed acoustic sensing (DAS) for various applications. Bulky acousto-optical modulators (AOM) as one of the key devices in DAS have been used for many years, but their relatively large volume and high power consumption are becoming the bottlenecks to hinder the development of ultra-compact and energy-efficient DAS systems that are highly demanded in practice. Here, an on-chip silicon electro-optical modulator (EOM) based on multiple coupled microrings is demonstrated with ultra-high ER of up to 68 dB while the device size and power consumption are only 260 × 185 µm2 and 3.6 mW, respectively, which are at least two orders of magnitude lower than those of a typical AOM. Such an on-chip EOM is successfully applied to DAS with an ultra-high sensitivity of -71.2 dB rad2/Hz (4 pε/√Hz) and a low spatial crosstalk noise of -68.1 dB rad2/Hz, which are very similar to those using an AOM. This work may pave the way for realization of next-generation ultra-compact DAS systems by integration of on-chip opto-electronic devices and modules with the capability of mass-production.

Graphene/silicon heterojunction for reconfigurable phase-relevant activation function in coherent optical neural networks.

Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.

Integrated Flexible Microscale Mechanical Sensors Based on Cascaded Free Spectral Range-Free Cavities.

Photonic mechanical sensors offer several advantages over their electronic counterparts, including immunity to electromagnetic interference, increased sensitivity, and measurement accuracy. Exploring flexible mechanical sensors on deformable substrates provides new opportunities for strain-optical coupling operations. Nevertheless, existing flexible photonics strategies often require cumbersome signal collection and analysis with bulky setups, limiting their portability and affordability. To address these challenges, we propose a waveguide-integrated flexible mechanical sensor based on cascaded photonic crystal microcavities with inherent deformation and biaxial tensile state analysis. Leveraging the advanced multiplexing capability of the sensor, for the first time, we successfully demonstrate 2D shape reconstruction and quasi-distributed strain sensing with 110 µm spatial resolution. Our microscale mechanical sensor also exhibits exceptional sensitivity with a detected force level as low as 13.6 µN in real-time measurements. This sensing platform has potential applications in various fields, including biomedical sensing, surgical catheters, aircraft and spacecraft engineering, and robotic photonic skin development.

Polycrystalline silicon 2 × 2 Mach-Zehnder interferometer optical switch.

In this paper, we demonstrate a broadband Mach-Zehnder interferometer optical switch based on polycrystalline silicon (poly-Si), which enables the development of multilayer photonics integrated circuits. The poly-Si is deposited under a low temperature of 620 °C to avoid unexpected thermal stress and influence on optoelectronic performance. By introducing a π/2 phase shifter and a push-pull configuration, the switch achieved low power consumption and loss caused by carrier plasma absorption (CPA). The switch operates effectively in both "Bar" and "Cross" states at voltages of -3.35 V and 3.85 V. The power consumptions are 7.98 mW and 9.39 mW, respectively. The on-chip loss is 5.9 ± 0.4 dB at 1550 nm, and the crosstalk is below -20 dB within the C-band. The switch exhibits a 10%-90% rise time of 7.7 µs and a 90%-10% fall time of 3.4 µs at 1550 nm. As far as we know, it is the first demonstration of a poly-Si switch on an 8-inch wafer pilot-line. The low-temperature deposited poly-Si switch is promising for multilayer active photonic devices and photonic-electronic applications.

Integrated Bragg grating filters based on silicon-Sb2Se3 with non-volatile bandgap engineering capability.

Integrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory. It is also experimentally presented by integrating non-volatile phase change material (PCM) Sb2Se3 on silicon to realize compact, low-loss, and broadband engineering operations. The fabricated filter holds a compact footprint of 0.5 µm × 43.5 µm and maintains a low insertion loss of < 0.5 dB after multiple levels of engineering to achieve crystallization. The filter is able to switch from a low-loss transmission state to the Bragg reflection state, making it a favorable solution for large-scale reconfigurable photonic circuits. With a switching extinction ratio over 30 dB at 1504.85 nm, this hybrid filter breaks the tradeoff between insertion loss and tuning range. These results reveal its potential as a new candidate for a basic element in large-scale non-volatile reconfigurable systems.

Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector.

Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 109 Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.

High-Speed Carbon Nanotube Photodetectors for 2 µm Communications.

In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (∼1.3-1.6 µm) to the 2 µm band (1.8-2.1 µm). However, the largest bandwidth (∼30 GHz) of the current high-speed photodetectors for the 2 µm window is considerably less than the developed 1.55 µm band photodetectors based on III-V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 µm wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 µm. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 µm exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future high-speed optical communication at both the 2 and 1.55 µm bands.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and ß' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the ß phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer ß'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.

Flexible waveguide integrated thermo-optic switch based on TiO2 platform.

Mechanically flexible photonic devices are critical components of novel bio-integrated optoelectronic and high-end wearable systems, in which thermo-optic switches (TOSs) as optical signal control devices are crucial. In this paper, flexible titanium oxide (TiO2) TOSs based on a Mach-Zehnder interferometer (MZI) structure were demonstrated around 1310 nm for, it is believed, the first time. The insertion loss of flexible passive TiO2 2 × 2 multi-mode interferometers (MMIs) is -3.1 dB per MMI. The demonstrated flexible TOS achieves power consumption (Pπ) of 0.83 mW, compared with its rigid counterpart, for which Pπ is decreased by a factor of 18. The proposed device could withstand 100 consecutive bending operations without noticeable degradation in TOS performance, indicating excellent mechanical stability. These results provide a new perspective for designing and fabricating flexible TOSs for flexible optoelectronic systems in future emerging applications.

Oriented Self-Assembly of Hierarchical Branch Organic Crystals for Asymmetric Photonics.

Organic hierarchical branch micro/nanostructures constituted by single crystals with inherent multichannel characteristics exhibit superior potential in regulating photon transmission for photonic circuits. However, organic branch micro/nanostructures with precise branch positions are extremely difficult to achieve due to the randomness of the nucleation process. Herein, by taking advantage of the dislocation stress field-impurity interaction that solute molecules deposit preferentially along the dislocation line, twinning deformation was introduced into microcrystals to induce oriented nucleation sites, and ultimately organic branch microstructures with controllable branch sites were fabricated. The growth mechanism of these controllable single crystals with an angle of 140° between trunk and branch is attributed to the low lattice mismatching ratio (η) of 4.8%. These as-prepared hierarchical branch single crystals with asymmetrical optical waveguide characteristics have been demonstrated as an optical logic gate with multiple input/out channels, which provides a route to command the nucleation sites and offers potential applications in the organic optoelectronics at the micro/nanoscale.

Hierarchical Integration of Organic Core/Shell Microwires for Advanced Photonics.

The combination of multiple components or structures into integrated micro/nanostructures for practical application has been pursued for many years. Herein, a series of hierarchical organic microwires with branch, core/shell (C/S), and branch C/S structures are successfully constructed based on organic charge transfer (CT) cocrystals with structural similarity and physicochemical tunability. By regulating the intermolecular CT interaction, single microwires and branch microstructures can be integrated into the C/S and branch C/S structures, respectively. Significantly, the integrated branch C/S microwires, with multicolor waveguide behavior and branch structure multichannel waveguide output characteristics, can function as an optical logic gate with multiple encoding features. This work provides useful insights for creating completely new types of organic microstructures for integrated optoelectronics.

Optical Temperature Sensor Based on Polysilicon Waveguides.

Traditional temperature detection has limitations in terms of sensing accuracy and response time, while chip-level photoelectric sensors based on the thermo-optic effect can improve measurement sensitivity and reduce costs. This paper presents on-chip temperature sensors based on polysilicon (p-Si) waveguides. Dual-microring resonator (MRR) and asymmetric Mach-Zehnder interferometer (AMZI) sensors are demonstrated. The experimental results show that the sensitivities of the sensors based on AMZI and MRR are 86.6 pm/K and 85.7 pm/K, respectively. The temperature sensors proposed in this paper are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. Benefitting from high sensitivity and a compact footprint, these sensors show great potential in the field of photonic-electronic applications.

Flexible passive integrated photonic devices with superior optical and mechanical performance.

Flexible integrated photonics is a rapidly emerging technology with a wide range of possible applications in the fields of flexible optical interconnects, conformal multiplexing sensing, health monitoring, and biotechnology. One major challenge in developing mechanically flexible integrated photonics is the functional component within an integrated photonic circuit with superior performance. In this work, several essential flexible passive devices for such a circuit were designed and fabricated based on a multi-neutral-axis mechanical design and a monolithic integration technique. The propagation loss of the waveguide is calculated to be 4.2 dB/cm. In addition, we demonstrate a microring resonator, waveguide crossing, multimode interferometer (MMI), and Mach-Zehnder interferometer (MZI) for use at 1.55 µm, each exhibiting superior optical and mechanical performance. These results represent a significant step towards further exploring a complete flexible photonic integrated circuit.

Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform.

The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO2 substrates limit operation to wavelengths λ ≲ 4 µm. Here we overcome these challenges with a chalcogenide glass-on-CaF2 PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to λ = 5.2 µm with a Johnson noise-limited noise-equivalent power of 1.1 nW/Hz1/2, no fall-off in photoresponse up to f = 1 MHz, and a predicted 3-dB bandwidth of f3dB > 1 GHz. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range.

Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s-1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.