HgBr2: an easily growing wide-spectrum birefringent crystal.

Birefringent materials are of great significance to the development of modern optical technology; however, research on halide birefringent crystals with a wide transparent range remains limited. In this work, mercuric bromide (HgBr2) has been investigated for the first time as a promising birefringent material with a wide transparent window spanning from ultraviolet (UV) to far-infrared (far-IR) spectral regions (0.34-22.9 µm). HgBr2 has an exceptionally large birefringence (Δn, 0.235 @ 546 nm), which is 19.6 times that of commercial MgF2. The ordered linear motif [Br-Hg-Br] with high polarizability anisotropy within the molecule is the inherent source of excellent birefringence, making it an efficient building block for birefringent materials. In addition, HgBr2 can be easily grown under mild conditions and remain stable in air for prolonged periods. Studying the birefringent properties of HgBr2 crystals would provide new ideas for future exploration of wide-spectrum birefringent materials.

Excellent Nonlinear Optical M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, Rb) Achieved by Unusual Cationic Substitution Strategy.

The typical chalcopyrite AgGaQ2 (Q = S, Se) are commercial infrared (IR) second-order nonlinear optical (NLO) materials; however, they suffer from unexpected laser-induced damage thresholds (LIDTs) primairy due to their narrow band gaps. Herein, what sets this apart from previously reported chemical substitutions is the utilization of an unusual cationic substitution strategy, represented by [[SZn4 ]S12 + [S4 Zn13 ]S24 + 11ZnS4 ⇒ MS12 + [M4 Cl]S24 + 11GaS4 ], in which the covalent Sx Zny units in the diamond-like sphalerite ZnS are synergistically replaced by cationic Mx Cly units, resulting in two novel salt-inclusion sulfides, M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, 1; Rb, 2). As expected, the introduction of mixed cations in the GaS4 anionic frameworks of 1 and 2 leads to wide band gaps (3.04 and 3.01 eV), which exceeds the value of AgGaS2 , facilitating the improvement of high LIDTs (9.4 and 10.3 × AgGaS2 @1.06 µm, respectively). Furthermore, compounds 1 and 2 exhibit moderate second-harmonic generation intensities (0.84 and 0.78 × AgGaS2 @2.9 µm, respectively), mainly originating from the orderly packing tetrahedral GaS4 units. Importantly, this study demonstrates the successful application of the cationic substitution strategy based on diamond-like structures to provide a feasible chemical design insight for constructing high-performance NLO materials.

Nonlinear Optical Phosphide CuInSi2P4: The Inaugural Member of Diamond-Like Family I-III-IV2-V4 Inspired by ZnGeP2.

Noncentrosymmetric phosphides have garnered significant attention as promising systems of infrared (IR) nonlinear optical (NLO) materials. Herein, a new quaternary diamond-like phosphide family I-III-IV2-V4 and its inaugural member, namely, CuInSi2P4 (CISP), were successfully fabricated by isovalent and aliovalent substitution based on ZnGeP2. First-principles calculations revealed that CISP has a large NLO coefficient (d14 = 110.8 pm/V), which can be attributed to the well-aligned tetrahedral [CuP4], [InP4], and [SiP4] units. Remarkably, the extremely small thermal expansion anisotropy (0.09) of CISP enables it to exhibit a considerable laser-induced damage threshold (LIDT, 5.0 × AgGaS2@1.06 µm) despite the relatively narrow band gap (0.81 eV). This work improves the chemical diversity of inorganic phosphide and promotes the development of phosphide systems, which may provide valuable perspectives for future exploration of IR NLO materials.

The first polyanion-substitution-driven centrosymmetric-to-noncentrosymmetric structural transformation realizing an excellent nonlinear optical supramolecule [Cd4P2][CdBr4].

Crystallographically, noncentrosymmetricity (NCS) is an essential precondition and foundation of achieving nonlinear optical (NLO), pyroelectric, ferroelectric, and piezoelectric materials. Herein, structurally, octahedral [SmCl6]3- is substituted by the acentric tetrahedral polyanion [CdBr4]2-, which is employed as a templating agent to induce centrosymmetric (CS)-to-NCS transformation based on the new CS supramolecule [Cd5P2][SmCl6]Cl (1), thereby providing the NCS supramolecule [Cd4P2][CdBr4] (2). Meanwhile, this replacement further results in the host 2D ∞2[Cd5P2]4+ layers converting to yield the twisted 3D ∞3[Cd4P2]2+ framework, which promotes the growth of bulk crystals. Additionally, phase 2 possesses well-balanced NLO properties, enabling considerable second-harmonic generation (SHG) responses (0.8-2.7 × AgGaS2) in broadband spectra, the thermal expansion anisotropy (2.30) together with suitable band gap (2.37 eV) primarily leading to the favorable laser-induced damage threshold (3.33 × AgGaS2), broad transparent window, and sufficient calculated birefringence (0.0433) for phase-matching ability. Furthermore, the first polyanion substitution of the supramolecule plays the role of templating agent to realize the CS-to-NCS transformation, which offers an effective method to rationally design promising NCS-based functional materials.

Cs4 Zn5 P6 S18 I2 : the Largest Birefringence in Chalcohalide Achieved by Highly Polarizable Nonlinear Optical Functional Motifs.

Chalcohalides not only keep the balance between the nonlinear optical (NLO) coefficient and wide band gap, but also provide a promising solution to achieve sufficient birefringence for phase-matching ability in NLO crystals. In this study, a novel chalcohalide, Cs4 Zn5 P6 S18 I2 (1) is successfully synthesized, by incorporating the highly electropositive Cs and the large electronegative I element into the zinc thiophosphate. Its 3D open framework features an edge-shared by distorted [ZnS4 ], ethanol-like [P2 S6 ], and unusual [ZnS2 I2 ] polyhedrons, which is inconsistent with the soft-hard-acids-bases theory. Remarkably, compound 1 simultaneously exhibits the large second-harmonic generation (SHG, 1.1×AgGaS2 , @1.3 µm) and a wide band gap (3.75 eV) toward a high laser-induced damage threshold (16.7×AgGaS2 , @1.06 µm), satisfying the rigorous requirements for a prominent infrared NLO material with concurrent SHG intensity (≥0.5×AGS) and band gap (≥3.5 eV). Moreover, to the best of the knowledge, the experimental result shows that phase 1 has the largest birefringence (0.108, @546 nm) in chalcohalide and meets phase-matching behavior demand originating from the polarizable anisotropy of NLO-functional motifs. This finding may provide great opportunities for designing birefringent chalcohalides.

Breaking the bottleneck of simultaneously wide band gap and large nonlinear optical coefficient by a "pore reconstruction" strategy in a salt-inclusion chalcogenide.

The template-based design of the crystal structure is a direct and highly efficient method to achieve optimal nonlinear optical (NLO, meaning second-order NLO) performances. The structural flexibility of porous salt-inclusion chalcogenides (SICs) provides an alternative platform for modulating the enlargement of the band gap (that is generally positive with laser-induced damage threshold) and second harmonic generation (SHG) response simultaneously. By applying the "pore reconstruction" strategy to SIC [K3Cl][Mn2Ga6S12] (1), a new derivative K3Rb3[K3Cl][Li2Mn4Ga12S27] (2) is successfully isolated, which unusually features a heterologous nanopore framework with inner diameters of 8.90 and 9.16 Å. Guided by such a strategy, compound 2 possesses the widest band gap (3.31 eV) among the magnetic NLO chalcogenides; this finding is dominantly attributed to the porous structure and the "dimensional deduction" effect. Moreover, phase 2 displays a remarkable phase-matchable SHG intensity (1.1 × AgGaS2 at the incident laser of 1910 nm) that originated from the oriented alignment of NLO-functional motifs, as well as the rich terminal S atoms in the nanopore structure. Furthermore, the "pore reconstruction" strategy offers an efficient pathway to explore potential NLO candidates with excellent comprehensive performances; in particular, it settles the conflicting issue of enhancing the band gap (>3.0 eV) and SHG intensity (>1.0 × AgGaS2) concurrently.

Nonlinear Optical Sulfides LiMGa8 S14 (M = Rb/Ba, Cs/Ba) Created by Li+ Driven 2D Centrosymmetric to 3D Noncentrosymmetric Transformation.

Cations that can regulate the configuration of anion group are greatly important but regularly unheeded. Herein, the structural transformation from 2D CS to 3D noncentrosymmetric (NCS, which is the prerequisite for second-order NLO effect) is rationally designed to newly afford two sulfides LiMGa8 S14 (M = Rb/Ba, 1; Cs/Ba, 2) by introducing the smallest alkali metal Li+ cation into the interlamination of 2D centrosymmetric (CS) RbGaS2 . The unusual frameworks of 1 and 2 are constructed from C2 -type [Ga4 S11 ] supertetrahedrons in a highly parallel arrangement. 1 and 2 display distinguished NLO performances, including strong phase-matchable second-harmonic generation (SHG) intensities (0.8 and 0.9 × AgGaS2 at 1910 nm), wide optical band gaps (3.24 and 3.32 eV), and low coefficient of thermal expansion for favorable laser-induced damage thresholds (LIDTs, 4.7, and 7.6 × AgGaS2 at 1064 nm), which fulfill the criteria of superior NLO candidates (SHG intensity >0.5 × AGS and band gap >3.0 eV). Remarkably, 1 and 2 melt congruently at 873.8 and 870.5 °C, respectively, which endows them with the potential of growing bulk crystals by the Bridgeman-Stockbarge method. This investigated system provides a new avenue for the structural evolution from layered CS to 3D NCS of NLO materials.

Open honeycomb frameworks of sulphides AHg4Ga5S12 (A = Rb, Cs) exhibiting infrared nonlinear optical properties.

A crystal structure with a diamond-like anionic framework belongs to a non-centrosymmetric macrostructure due to the aligned arrangement of tetrahedral units, meeting the premise of second-order nonlinear optical (NLO) materials. Herein, two new Hg-based sulphides, namely RbHg4Ga5S12 (1) and CsHg4Ga5S12 (2), which are isostructural and crystallise in the trigonal space group R3, are successfully isolated in sealed silica tubes by a solid-state reaction. The features of their three-dimensional open honeycomb frameworks are attributed to the parallel alignment of tetrahedral MS4 (M is disordered by 0.444 Hg and 0.555 Ga) building motifs, accompanied by Rb+ (or Cs+) reseating in the cavities. Notably, although the band gap values of 1 and 2 are 2.30 and 2.36 eV, separately, their thermal expansion anisotropies (0.15 and 0.41, respectively) are favourable for achieving laser-induced damage thresholds (5.6 and 5.8 times that of AgGaS2 for 1 and 2, respectively). In addition, the strong polarisability of tetrahedral MS4 building motifs in the diamond-like anionic structures is responsible for the promising second-harmonic generation (SHG) intensities (1.1 and 1.8 times that of AgGaS2 for 1 and 2, respectively) in the particle size range of 50-75 µm with non-phase-matchable behaviour at 1910 nm. Furthermore, theoretical investigation elaborates that electron transitions in compounds 1 and 2 mainly occur from valence band S-3p to conduction band Hg-6s and Ga-4s states, demonstrating that the linear and nonlinear optical properties originate primarily from the synergy of tetrahedral MS4 units.

[K2 PbX][Ga7 S12 ] (X = Cl, Br, I): The First Lead-Containing Cationic Moieties with Ultrahigh Second-Harmonic Generation and Band Gaps Exceeding the Criterion of 2.33 eV.

In contrast to anionic group theory of nonlinear optical (NLO) materials that second-harmonic generation (SHG) responses mainly originate from anionic groups, structural regulation on the cationic groups of salt-inclusion chalcogenides (SICs) is performed to make them also contribute to the NLO effects. Herein, the stereochemically active lone-electron-pair Pb2+ cation is first introduced to the cationic groups of NLO SICs, and the resultant [K2 PbX][Ga7 S12 ] (X = Cl, Br, I) are isolated via solid-state method. The features of their three-dimensional structures comprise highly oriented [Ga7 S12 ]3- and [K2 PbX]3+ frameworks derived from AgGaS2 , which display the largest phase-matching SHG intensities (2.5-2.7 × AgGaS2 @1800 nm) among all SICs. Concurrently, three compounds manifest band gap values of 2.54, 2.49, and 2.41 eV (exceeding the criterion of 2.33 eV), which can avoid two-photon absorption under the fundamental laser of 1064 nm, along with the relatively low anisotropy of thermal expansion coefficients, leading to improved laser-induced damage thresholds (LIDTs) values of 2.3, 3.8, and 4.0 times that of AgGaS2 . In addition, the density of states and SHG coefficient calculations demonstrate that the Pb2+ cations narrow the band gaps and benefit SHG responses.

Photochromic Semiconductors: Bottom-Up Strategy to Construct Type II-Stacking Viologen π-Aggregates.

Semiconductor conductivities depend largely on the crystal structures and the associated electronic structures. If the electronic structures can be switched reversibly in the same crystal structure, then a drastic conductivity change may be controllable. The effect of electron transfer (ET) on semiconductor conductivity remained elusive so far. In this work, a series of two pillared inorganicorganic hybrid photochromic semiconductors (PSCs), [(CQ)Pb3X6(H2O)]·2H2O [X = Cl (1) and Br (2), CQ = N-4,4'-bipyridiniopropionate (viologen)], with II-stacking viologen π-aggregates, are constructed by a bottom-up self-assembly strategy through inorganic skeleton-directed intercalation and intermolecular noncovalent interaction. The conductivities are abnormally "invariant" after photoinduced ET, breaking the convention that the generation of radicals favors conductivity. The abnormally "invariant" conductivities are mainly derived from approximate electronic couplings before and after ET between II-stacking viologen π-aggregates.

AAg3Ga8Se14 (A = Rb, Cs): second-harmonic generation responses realized through the parallel arrangement of AgSe4 and GaSe4 tetrahedrons.

Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via solid-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group Cm (no. 8) and their three-dimensional [Ag3Ga8Se14]- anionic frameworks were comprised of AgSe4 and GaSe4 tetrahedrons. Their UV-Vis-near infrared diffuse reflectance spectra showed that 1 and 2 possessed wide band gaps of 2.17 and 2.10 eV, respectively. Notably, under incident laser irradiation at 1910 nm, compounds 1 and 2 presented moderate second-harmonic generation responses of 0.6 and 0.7 × AgGaS2, respectively, with phase-matching behaviours due to the parallel arrangement of nonlinear optical (NLO) functional tetrahedral AgSe4 and GaSe4 units. The laser-induced damage thresholds of 1 and 2 were estimated to be 25.4 and 18.0 MW cm-2, respectively, which were 2.1 and 1.5 times the threshold of AgGaS2. This study revealed that the title selenides, which were constructed from tetrahedral units arranged in a parallel array, are promising infrared NLO materials.

AIn4S6Cl (A = Rb and Cs) and Pb5Sn3Q10Cl2 (Q = S and Se): quaternary chalcohalides with mixed anionic coordination exhibit photocurrent responses.

Mixed-anionic compounds have caught considerable attention due to their flexible coordination manners and abundant physical properties. Four new chalcohalides RbIn4S6Cl (1), CsIn4S6Cl (2), Pb5Sn3S10Cl2 (3) and Pb5Sn3Se10Cl2 (4) were successfully obtained by the high-temperature halide salt flux method. Compounds 1 and 2 have layered structures that consist of octahedral InS6 and aliovalent-anionic InS3Cl units. Compounds 3 and 4 feature 3-D structural frameworks built by [Pb4SnQ8Cl4]6- and [PbSn2Q6]2- (Q = S and Se) polyhedral chains, in which partial Pb2+ cations are coordinated by Q2- and Cl- anions. Compounds 1-4 have optical band gaps close to the wavelength range of visible light and exhibit significant photocurrent responses of 28.75 nA cm-2, 55.12 nA cm-2, 19.58 mA cm-2, and 36.12 µA cm-2 with on/off ratios 30.0, 2.5, 15.7 and 2.6, respectively, implying their potential for photovoltaic applications. To the best of our knowledge, compound 3 has the largest photocurrent response among all non-oxides. In addition, the activation energies of 1-4 are well below 0.3 eV, which makes these compounds interesting for potential applications in electrochemical devices. This work sheds light on the exploration of promising photocurrent response materials in the mixed-anionic compound system.

Broad transparency and wide band gap achieved in a magnetic infrared nonlinear optical chalcogenide by suppressing d-d transitions.

Magnetic infrared (IR) nonlinear optical (NLO) materials, particularly those containing d-block metals, have attracted considerable attention due to the contributions of d-orbitals to large NLO efficiency. However, the d-d transitions from the d-block metals lead to strong optical absorption and narrow band gap, seriously hindering their practical applications. The structural flexibility of salt-inclusion systems provides a good opportunity for modulating the crystal field of magnetic ions to suppress the d-d transitions but allowing the NLO-active d-s and d-p transitions. These ideas afford a new salt-inclusion sulfide [K3Cl][Mn2Ga6S12], which features a rare nanoporous [MnGa3S6]- framework with tunnels of inner diameter of 9.0 Å and possesses a broad transparency (0.39-25.0 µm) and the widest band gap (3.17 eV) among all magnetic IR NLO chalcogenides. Remarkably, it exhibits a strong phase-matchable second-harmonic generation intensity (0.8 × AgGaS2 at 1910 nm and 3.1 × AgGaS2 at 1064 nm) and a high laser-induced damage threshold (12.5 × AgGaS2 at 1064 nm), achieving the important criteria of an advanced IR NLO material.

Photocurrent, humidity sensitivity and proton conductivity properties of a new sulfide semiconductor CsCuS4.

Copper chalcogenides have drawn considerable attention due to their prominent semiconducting properties. A new Cu-containing semiconductor, namely, CsCuS4 (1), was obtained by a halide salt flux method. Its structure featured 1D infinite ∞1[CuS4] - chains, where the polysulfide anion S42- was relatively rare in Cu chalcogenides. The compound was multifunctional and exhibited significant photocurrent, humidity sensitivity, and proton conductivity properties. Specifically, it exhibits an "on" state photocurrent response of 0.95 µA cm-2 and an "off" state photocurrent response of 0.55 µA cm-2 with good reversibility. The humidity-sensitive resistance in dry air (10% RH) could reach up to six orders of magnitude higher than that in wet air (100% RH). Compound 1 showed an activation energy of 0.19 eV and may have potential electrochemical applications.

TREM2 and CD163 Ameliorate Microglia-Mediated Inflammatory Environment in the Aging Brain.

Aging decreases cognitive functions, especially learning and memory. Neuroinflammation is mediated by microglia and occurs in age-related neurodegenerative diseases. The expression profiles in a dataset of cognitively normal controls (GSE11882) were obtained from the Gene Expression Omnibus (GEO) database. Microarray data were used to explore the expression of age-related genes in the human hippocampus. A total of 120 differentially expressed genes (DEGs) were identified and subjected to Gene Ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) analyses. A protein-protein interaction (PPI) network was constructed. A total of 18 key genes were identified by the plugin cytoHubba in Cytoscape software. Two genes with a positive impact on cognition during aging were teased out: triggering receptor expressed on myeloid cells 2 (TREM2) and a scavenger receptor (CD163). Finally, the results of reverse transcription-quantitative polymerase chain reaction (RT-qPCR) and western blotting (WB) verified that the mRNA expression of these two genes was significantly upregulated in aged mice. Moreover, the levels of the inflammatory factors IL-1ß and IL-6 were significantly increased. TREM2 and CD163 may be upregulated to alleviate the inflammatory environment resulting from microglial activation in the aging brain, thereby delaying cognitive decline.

Optimizing the Nonlinear Optical Performance of an A-N-M-Q (A: Alkali Metal; N: d10 Metal; M: Main Group Metal; Q: Chalcogen) System.

Exploring new infrared nonlinear optical (IR NLO) materials with superior overall properties is scientifically and technically important. However, large second-order harmonic generation (SHG) efficiencies and high laser-induced damage thresholds (LIDT) are incompatible, which makes realizing this goal a challenge. The IR NLO performance of an A-NIIB-MIIIA-Q (Q: chalcogen) system was optimized by simultaneously modulating A/(M + N) and M/N ratios (A: alkali metal; N, M: tetra-coordinated metals), and SHG-LIDT balance was achieved. Three new sulfides, KCd3Ga5S11 (1), RbCd4Ga3S9 (2), and Cs2Cd2Ga8S15 (3), containing the same CdS4 and GaS4 but with different A/(Ga + Cd) and Ga/Cd ratios were obtained. Among these compounds, compound 3 exhibits both the largest SHG efficiency (0.5 × AgGaS2) and LIDT (35 × AgGaS2), which can be ascribed to the Ga/Cd modulation for enhancing the NLO functional motif distortions and SHG efficiency as well as the A/(Ga + Cd) modulation for enlarging the band gap and LIDT. Remarkably, compound 3 is the first phase-matchable IR NLO material in the A-NIIB-MIIIA-Q family. This article proposes a novel avenue to explore infrared nonlinear materials with superior comprehensive properties by modulating the A/(M + N) and M/N ratios.

Balanced infrared nonlinear optical performance achieved by modulating the covalency and ionicity distributions in the electron localization function map.

The nonlinear optical (NLO) efficiency (dij) and laser-induced damage threshold (LIDT) of a material are mainly determined by their covalency and ionicity, respectively, the incompatibility between which makes balancing the dij and LIDT challenging in an IR NLO material. The topological feature (fractal dimension) of the electron localization function (ELF) map (distribution of covalency and ionicity) was evaluated for a series of NLO materials, and, phenomenologically, the fine mixing of covalency and ionicity will benefit a balanced dij and LIDT. Chemical bonds with different interaction strengths were introduced simultaneously to mix the covalency and iconicity finely, and three new IR NLO sulfides, A2Ba3Li6Ga28S49 (A = K, 1; Rb, 2; Cs, 3), were obtained. They exhibit a strong NLO efficiency (1.9-2.1 × AgGaS2 at 1064 nm and 0.5-0.6 × AgGaS2 at 1910 nm) and high LIDTs (16.7-18.0 × AgGaS2), which fulfill the criteria of being promising IR NLO candidates. This study provides a new method for designing high-performance IR NLO materials based on the topological features of the ELF.

Uncovering a Functional Motif of Nonlinear Optical Materials by In Situ Electron Density and Wavefunction Studies Under Laser Irradiation.

Exploring nonlinear optical (NLO) functional motifs (FM, the structural origin of NLO efficiency) is vital for the rational design of NLO materials. Normal spectrum techniques applied in studying photon exciting materials are invalid for NLO materials, in which electrons are not excited substantially but only distorted under laser. A general strategy of determining NLO FM is proposed by comparative studies of experimental electron density (ED) without and under the laser. The in situ experimental ED and wavefunction of typical NLO material LiB3 O5 (LBO) under dark and 360 and 1064 nm lasers are investigated. Compared with the initial state under dark, the ED of [B3 O5 ]- unit at functional states under laser irradiation exhibits remarkable changes of topological atomic and bond properties, confirming the NLO FM being [B3 O5 ]- . The work extracts for the first time the FM of a NLO material experimentally and highlights the crucial role of in situ ED analysis in studying NLO mechanisms.

AMnAs3S6 (A = Cs, Rb): Phase-Matchable Infrared Nonlinear Optical Functional Motif [As3S6]3- Obtained via Surfactant-Thermal Method.

Exploration of a new nonlinear optical (NLO)-active functional motif is important in the rational design of promising infrared (IR) NLO materials. Compared with typical tetrahedral MQ4 (M = IIB, III, IV metals; Q = S, Se) motifs, MQ3 (M = As, Sb) pyramids favor high second-harmonic generation (SHG) efficiency while frequently hindering phase matching (PM) because of excessively large optical anisotropy. The surfactant-thermal method was first adopted to achieve PM in MQ3-containing systems and synthesize mixed covalent-ionic IR NLO materials. Two new thioarsenates of AMnAs3S6 (A = Cs, Rb) exhibiting strong PM SHG efficiencies comparable to commercial AGS and laser-induced damage thresholds of one order higher than AGS were obtained. The [As3S6]3- unit in their structures is an unprecedented NLO-active functional motif, which can be useful in designing new IR NLO compounds with large SHG efficiency. In addition, the surfactant-thermal method provides a new general strategy for synthesizing new IR NLO materials.

[ABa2Cl][Ga4S8] (A = Rb, Cs): Wide-Spectrum Nonlinear Optical Materials Obtained by Polycation-Substitution-Induced Nonlinear Optical (NLO)-Functional Motif Ordering.

Noncentrosymmetry (NCS) is a prerequisite for second-order nonlinear optical (NLO) materials. In this work, a new polycation-substitution-induced centrosymmetry (CS)-to-NCS transformation strategy was applied in CS RbGaS2, affording two novel NCS salt-inclusion chalcogenides: [ABa2Cl][Ga4S8] (A = Rb, 1; Cs, 2). Remarkably, they exhibit the key merits of both Vis and IR NLO candidates, including strong phase-matchable second harmonic generation intensities (10.4-15.3 × KH2PO4 at 1064 nm; 0.9-1.0 × AgGaS2 at 1910 nm), high laser-induced damage thresholds (11-12 × AgGaS2), and a wide transparent window. Their prominent NLO performances originate from the orderly packing of T2-supertetrahedral Ga4S10 motifs resulting from the template effect of acentric polycation [ClA2Ba3]7+. The CS-to-NCS transformation first realized by polycation-substitution-induced NLO-functional motif ordering provides an effective approach for designing new NLO materials.