ABSTRACT
BN is the currently required segregant for perpendicular FePt media. We found that BN can be diffused from the MgTiOBN intermediate layer during a high temperature process. The FePtCAg film sputtered on MgTiOBN layers illustrates higher perpendicular magnetocrystalline anisotropy (Ku) (1.43 × 107 erg/cm3) and coercivity (normal to film surface) (17 kOe) at 350 K compared to BN/FePtCAg/MgTiON film. From the microstructure, the FePtCAg film shows the granular structure on the MgTiOBN intermediate layer, but parts of the irregular FePt grains are agglomerated and partially separated in the matrix, with grains size being, on average, 26.7 nm. Cross-sectional imaging showed that the FePt grains have a truncated pyramid shape with a lower wetting angle, which is influenced by the surface energy of MgTiOBN. BN segregation at FePt grains or boundaries is still not clear. Using the electron energy loss spectrum (EELS), we found that part of the BN atoms were clearly observed in the FePt lattice and iron-boride oxide was indexed in the x-ray photoelectron spectroscopy (XPS) spectra. To determine the effects of BN segregant (from capping layer or intermediate layer) on the magnetic switching behavior of FePtCAg film, the intrinsic-(ΔHint = 6.17 kOe, 6.54 kOe) and extrinsic- (ΔHext = 0.80 kOe, 0.39 kOe) switching field distribution (SFD) were measured by plotting saturated major- and unsaturated minor- hysteresis loops to evaluate the crystal orientation and microstructure (grains volume and distribution) for BN/FePtCAg/MgTiON and FePtCAg/MgTiOBN films, respectively. The main contribution of intrinsic SFD is the c-axis misalignment for the BN/FePt/MgTiON sample; however, the dispersed magnetic anisotropy has a higher input to intrinsic SFD for FePtCAg/MgTiOBN/CrRu film.
ABSTRACT
Hepatic progenitor cells (HPCs) might be the origin of hepatocellular carcinoma. 1α,25-Dihydroxyvitamin D3 (1,25(OH)2D3) (VD3) has been documented as an anticancer agent for various cancers. However, the potential effect of VD3 on the proliferation and malignant transformation of HPCs induced by aflatoxin B1 (AFB1) has not been determined. In this study, we found that AFB1 exhibited the stimulative effects on the proliferation, dedifferentiation and invasion of HPCs via activating AKT pathway but turning off Hippo pathway, which were terminated when VD3 was used in combination with AFB1. Furthermore, in AFB1-induced liver damage mouse model, VD3 also showed protective effect by reducing HPCs population. Together, these preclinical data not only provide a newly identified mechanism by which AFB1 affects HPCs but also strengthen the idea of developing VD3 as an anticancer agent.
Subject(s)
Aflatoxin B1/pharmacology , Carcinoma, Hepatocellular/pathology , Gene Expression Regulation, Neoplastic/drug effects , Hepatocytes/pathology , Liver Neoplasms/pathology , Stem Cells/pathology , Vitamin D/analogs & derivatives , Acyltransferases , Adaptor Proteins, Signal Transducing/genetics , Adaptor Proteins, Signal Transducing/metabolism , Animals , Apoptosis , Carcinoma, Hepatocellular/drug therapy , Carcinoma, Hepatocellular/metabolism , Cell Dedifferentiation , Cell Proliferation , Female , Hepatocytes/drug effects , Hepatocytes/metabolism , Humans , Liver Neoplasms/drug therapy , Liver Neoplasms/metabolism , Mice , Mice, Inbred ICR , Phosphatidylinositol 3-Kinases/genetics , Phosphatidylinositol 3-Kinases/metabolism , Phosphoproteins/genetics , Phosphoproteins/metabolism , Poisons/pharmacology , Proto-Oncogene Proteins c-akt/genetics , Proto-Oncogene Proteins c-akt/metabolism , Stem Cells/drug effects , Stem Cells/metabolism , Transcription Factors/genetics , Transcription Factors/metabolism , Tumor Cells, Cultured , Vitamin D/pharmacology , Xenograft Model Antitumor Assays , YAP-Signaling ProteinsABSTRACT
This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.
ABSTRACT
This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.