Bullseye dielectric cavities for photon collection from a surface-mounted quantum-light-emitter.

Coupling light from a point source to a propagating mode is an important problem in nano-photonics and is essential for many applications in quantum optics. Circular "bullseye" cavities, consisting of concentric rings of alternating refractive index, are a promising technology that can achieve near-unity coupling into a first lens. Here we design a bullseye structure suitable for enhancing the emission from dye molecules, 2D materials and nano-diamonds positioned on the surface of these cavities. A periodic design of cavity, meeting the Bragg scattering condition, achieves a Purcell factor of 22.5 and collection efficiency of 80%. We also tackle the more challenging task of designing a cavity for coupling to a low numerical aperture fibre in the near field. Finally, using an iterative procedure, we study how the collection efficiency varies with apodised (non-periodic) rings.

Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation.

We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~ 10-4 A (a photo-to-dark current ratio of ~ 107) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits strong PPC with long-lasting recovery time, which leads the appearance of the conductor-like behaviour in ZTO semiconductor. In the present case, the conductivity changes over six orders of magnitude, from ~ 10-7 to 0.92/Ω/cm. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep states and tail states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-bandgap tail states of the ZTO in the strong PPC, while deep states contribute to mild PPC.

Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films.

The measurement of ζ potential of Ga-face and N-face gallium nitride has been carried out as a function of pH. Both of the faces show negative ζ potential in the pH range 5.5-9. The Ga-face has an isoelectric point at pH 5.5. The N-face shows a more negative ζ potential due to larger concentration of adsorbed oxygen. The ζ potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self-assembly of a monolayer of diamond nanoparticles on the GaN surface. The subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films, confirming a seeding density in excess of 1011 cm-2. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.