ABSTRACT
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3-Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications.
ABSTRACT
Random lasers are promising in the spectral regime, wherein conventional lasers are unavailable, with advantages of low fabrication costs and applicability of diverse gain materials. However, their practical application is hindered by high threshold powers, low power efficiency, and difficulties in light collection. Here, we demonstrate a power-efficient easy-to-fabricate non-resonant laser using a deep hole on a porous gain material. The laser action in this counterintuitive cavity was enabled by non-resonant feedback from strong diffuse reflections on the inner surface. Additionally, significant enhancements in slope efficiency, threshold power, and directionality were obtained from cavities fabricated on a porous Nd:YAG ceramic.
ABSTRACT
In the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the Y2O3 ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components. During this etching process, severe erosion and particles generated on the ceramic surface can have effects on overall equipment effectiveness. Herein, we report the outstanding plasma etching resistance of Y2O3-MgO nanocomposite ceramics under a CF4/Ar/O2 gas atmosphere; the erosion depth of this material is 40-79% of that of the reference materials, Y2O3 ceramics. In a robust approach involving effective control of the microstructure with different initial particles and sintering conditions, it is possible to understand the relationship between etching behavior and microstructure evolution of the nanocomposite ceramic. The results indicate that the nanocomposite with fine and homogeneous domain distribution can decrease particle generation and ameliorate its life cycle; accordingly, this is a promising alternative candidate material for ceramic components in plasma chambers.
ABSTRACT
Non-resonant lasers exhibit the potential for stable and consistent narrowband light sources. Furthermore, non-resonant lasers do not require well-defined optics, and thus has considerably diversified the available types of laser gain materials including powders, films, and turbid ceramics. Despite these intrinsic advantages, the practical applications of non-resonant lasers have been limited so far, mainly because of their low power efficiency and omnidirectional emission. To overcome these limitations, here we propose a light trap design for non-resonant lasers based on a spherical scattering cavity with a small entrance. Using a porous Nd3+:YAG ceramic, directional laser emission could be observed with significant enhancements in the slope efficiency and linewidth (down to 32 pm). A theoretical model is also developed to describe and predict the operation characteristics of proposed non-resonant laser.
