Disentangling doping and strain effects at defects of grown MoS2 monolayers with nano-optical spectroscopy.

The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a widely researched topic over the past few decades. Optical characterization techniques such as photoluminescence and Raman spectroscopies are important tools to probe the physical properties of semiconductors and the impact of defects. However, confocal optical techniques present a spatial resolution limitation lying in a µm-scale, which can be overcome by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil the nanoscale optical properties of grown MoS2 monolayers, revealing that the impact of doping and strain can be disentangled by the combination of both techniques. A noticeable enhancement of the exciton peak intensity corresponding to trion emission quenching is observed at narrow regions down to a width of 47 nm at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, two distinct MoS2 samples present different nano-optical responses at their edges associated with opposite strains. The edge of the first sample shows a photoluminescence intensity enhancement and energy blueshift corresponding to a frequency blueshift for E2g and 2LA Raman modes. In contrast, the other sample displays a photoluminescence energy redshift and frequency red shifts for E2g and 2LA Raman modes at their edges. Our work highlights the potential of combining tip-enhanced photoluminescence and Raman spectroscopies to probe localized strain fields and doping effects related to defects in two-dimensional materials.

Ultrafast hot electron-hole plasma photoluminescence in two-dimensional semiconductors.

The transition metal dichalcogenide family of semiconducting two-dimensional materials has recently shown a prominent potential to be an ideal platform to study the exciton Mott transition into electron-hole plasma and liquid phases due to their strong Coulomb interactions. Here, we show that pulsed laser excitation at high pump fluences can induce this exciton Mott transition to an electron-hole plasma in mono and few-layer transition metal dichalcogenides at room temperature. The formation of an electron-hole plasma leads to a broadband light emission spanning from the near infrared to the visible region. In agreement with our theoretical calculations, the photoluminescence emission at high energies displays an exponential decay that directly reflects the electronic temperature - a characteristic fingerprint of unbound electron-hole pair recombination. Furthermore, two-pulse excitation correlation measurements were performed to study the dynamics of electronic cooling, which shows two decay time components, one of less than 100 fs and a slower component of few ps associated with the electron-phonon and phonon-lattice bath thermalizations, respectively. Our work may shed light on further studies of the exciton Mott transition into other two-dimensional materials and their heterostructures and its applications in nanolasers and other optoelectronic devices.

Studying 2D materials with advanced Raman spectroscopy: CARS, SRS and TERS.

Raman spectroscopy has been established as a valuable tool to study and characterize two-dimensional (2D) systems, but it exhibits two drawbacks: a relatively weak signal response and a limited spatial resolution. Recently, advanced Raman spectroscopy techniques, such as coherent anti-Stokes spectroscopy (CARS), stimulated Raman scattering (SRS) and tip-enhanced Raman spectroscopy (TERS), have been shown to overcome these two limitations. In this article, we review how useful physical information can be retrieved from different 2D materials using these three advanced Raman spectroscopy and imaging techniques, discussing results on graphene, hexagonal boron-nitride, and transition metal di- and mono-chalcogenides, thus providing perspectives for future work in this early-stage field of research, including similar studies on unexplored 2D systems and open questions.

Micro-Raman spectroscopy of lipid halo and dense-core amyloid plaques: aging process characterization in the Alzheimer's disease APPswePS1ΔE9 mouse model.

The deposition of amyloid plaques is considered one of the main microscopic features of Alzheimer's disease (AD). Since plaque formation can precede extensive neurodegeneration and it is the main clinical manifestation of AD, it constitutes a relevant target for new treatment and diagnostic approaches. Micro-Raman spectroscopy, a label-free technique, is an accurate method for amyloid plaque identification and characterization. Here, we present a high spatial resolution micro-Raman hyperspectral study in transgenic APPswePS1ΔE9 mouse brains, showing details of AD tissue biochemical and histological changes without staining. First we used stimulated micro-Raman scattering to identify the lipid-rich halo surrounding the amyloid plaque, and then proceeded with spontaneous (conventional) micro-Raman spectral mapping, which shows a cholesterol and sphingomyelin lipid-rich halo structure around dense-core amyloid plaques. The detailed images of this lipid halo relate morphologically well with dystrophic neurites surrounding plaques. Principal Component Analysis (PCA) of the micro-Raman hyperspectral data indicates the feasibility of the optical biomarkers of AD progression with the potential for discriminating transgenic groups of young adult mice (6-month-old) from older ones (12-month-old). Frequency-specific PCA suggests that plaque-related neurodegeneration is the predominant change captured by Raman spectroscopy, and the main differences are highlighted by vibrational modes associated with cholesterol located majorly in the lipid halo.

Nonlinear and vibrational microscopy for label-free characterization of amyloid-ß plaques in Alzheimer's disease model.

Given the long subclinical stage of Alzheimer's disease (AD), the study of biomarkers is relevant both for early diagnosis and the fundamental understanding of the pathophysiology of AD. Biomarkers provided by Amyloid-ß (Aß) plaques have led to an increasing interest in characterizing this hallmark of AD due to its promising potential. In this work, we characterize Aß plaques by label-free multimodal imaging: we combine two-photon excitation autofluorescence (TPEA), second harmonic generation (SHG), spontaneous Raman scattering (SpRS), coherent anti-Stokes Raman scattering (CARS), and stimulated Raman scattering (SRS) to describe and compare high-resolution images of Aß plaques in brain tissues of an AD mouse model. Comparing single-laser techniques images, we discuss the origin of the SHG, which can be used to locate the plaque core reliably. We study both the core and the halo with vibrational microscopy and compare SpRS and SRS microscopies for different frequencies. We also combine SpRS spectroscopy with SRS microscopy and present two core biomarkers unexplored with SRS microscopy: phenylalanine and amide B. We provide high-resolution SRS images with the spatial distribution of these biomarkers in the plaque and compared them with images of the amide I distribution. The obtained spatial correlation corroborates the feasibility of these biomarkers in the study of Aß plaques. Furthermore, since amide B enables rapid imaging, we discuss its potential as a novel fingerprint for diagnostic applications.

Local photodoping in monolayer MoS2.

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices.

Second harmonic generation in defective hexagonal boron nitride.

Determining the role of defects in materials can be an important task both for the fundamental understanding of their influence on material properties and for future applications. In this work, we studied the influence of defects on the second harmonic generation (SHG) in hexagonal boron nitride (h-BN). We characterized the sample by photoluminescence imaging and spectroscopy, showing strong and sharp photoluminescence emission at visible range from h-BN flakes due to single defect states. By doing second harmonic imaging, we found strong emission from the h-BN flakes that correlates spatially with the photoluminescence imaging. By doing polarization-resolved SHG, we found deviations from the expected polarization pattern in pristine h-BN samples. We also characterized the nonlinear optical susceptibility of h-BN with defects with a value of one order of magnitude larger than for pristine h-BN, which highlights the role of defects in the efficiency of SHG. Therefore defect engineering could be used as a potential tool for nonlinear optical signal enhancement.

Nonlinear Dark-Field Imaging of One-Dimensional Defects in Monolayer Dichalcogenides.

One-dimensional defects in two-dimensional (2D) materials can be particularly damaging because they directly impede the transport of charge, spin, or heat and can introduce a metallic character into otherwise semiconducting systems. Current characterization techniques suffer from low throughput and a destructive nature or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and nondestructively probe grain boundaries and edges in monolayer dichalcogenides (i.e., MoSe2, MoS2, and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defect's metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress toward both applications and fundamental materials discoveries.

A fingerprint of amyloid plaques in a bitransgenic animal model of Alzheimer's disease obtained by statistical unmixing analysis of hyperspectral Raman data.

The global prevalence of Alzheimer's disease (AD) points to endemic levels, especially considering the increase of average life expectancy worldwide. AD diagnosis based on early biomarkers and better knowledge of related pathophysiology are both crucial in the search for medical interventions that are able to modify AD progression. In this study we used unsupervised spectral unmixing statistical techniques to identify the vibrational spectral signature of amyloid ß aggregation in neural tissues, as early biomarkers of AD in an animal model. We analyzed spectral images composed of a total of 55 051 Raman spectra obtained from the frontal cortex and hippocampus of five bitransgenic APPswePS1ΔE9 mice, and colocalized amyloid ß plaques by other fluorescence techniques. The Raman signatures provided a multifrequency fingerprint consistent with the results of synthesized amyloid ß fibrils. The fingerprint obtained from unmixed analysis in neural tissues is shown to provide a detailed image of amyloid plaques in the brain, with the potential to be used as biomarkers for non-invasive early diagnosis and pathophysiology studies in AD on the retina.

Twisted bilayer graphene photoluminescence emission peaks at van Hove singularities.

We report on photoluminescence emission imaging by femtosecond laser excitation on twisted bilayer graphene samples. The emission images are obtained by tuning the excitation laser energies in the near infrared region. We demonstrate an increase of the photoluminescence emission at excitation energies that depends on the bilayer twist angle. The results show a peak for the light emission when the excitation is in resonance with transitions at the van Hove singularities in the electronic density of states. We measured the photoluminescence excitation peak position and width for samples with various twist angles showing resonances in the energy range of 1.2 to 1.7 eV.

Anomalous Nonlinear Optical Response of Graphene Near Phonon Resonances.

In this work we probe the third-order nonlinear optical property of graphene and hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman spectroscopy. When the energy difference of the two input fields matches the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected, while for graphene an anomalous decrease is observed. This behavior can be understood in terms of a coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure nonlinear optical response.

Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy.

Double-resonance Raman scattering is a sensitive probe to study the electron-phonon scattering pathways in crystals. For semiconducting two-dimensional transition-metal dichalcogenides, the double-resonance Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been fully understood. Here we present a multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2. Results show that the frequency of some Raman features shifts when changing the excitation energy, and first-principle simulations confirm that such bands arise from distinct acoustic phonons, connecting different valley states. The double-resonance Raman process is affected by the indirect-to-direct bandgap transition, and a comparison of results in monolayer and bulk allows the assignment of each Raman feature near the M or K points of the Brillouin zone. Our work highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS2.

Supercollision cooling effects on the hot photoluminescence emission of graphene.

We report on hot photoluminescence measurements that show the effects of acoustic phonon supercollision processes in the intensity of graphene light emission. We use a simple optical method to induce defects on single layer graphene in a controlled manner to study in detail the light emission dependence on the sample defect density. It is now well accepted that the graphene photoluminescence is due to black-body thermal emission from the quasi-equilibrium electrons at a temperature well above the lattice temperature. Our results show that as the sample defect density is increased the electrons relax energy more efficiently via acoustic phonon supercollision processes leading to lower electron temperatures and thus lower emission intensities. The calculated intensity decrease due to supercollision energy relaxation agrees well with the experimental data.

Erratum: Symmetry-Dependent Exciton-Phonon Coupling in 2D and Bulk MoS_{2} Observed by Resonance Raman Scattering [Phys. Rev. Lett. 114, 136403 (2015)].

This corrects the article DOI: 10.1103/PhysRevLett.114.136403.

Symmetry-dependent exciton-phonon coupling in 2D and bulk MoS2 observed by resonance Raman scattering.

This work describes a resonance Raman study performed on samples with one, two, and three layers (1L, 2L, 3L), and bulk MoS2, using more than 30 different laser excitation lines covering the visible range, and focusing on the intensity of the two most pronounced features of the Raman scattering spectrum of MoS2 (E2g(1) and A1g bands). The Raman excitation profiles of these bands were obtained experimentally, and it is found that the A1g feature is enhanced when the excitation laser is in resonance with A and B excitons of MoS2, while the E2g1 feature is shown to be enhanced when the excitation laser is close to 2.7 eV. We show from the symmetry analysis of the exciton-phonon interaction that the mode responsible for the E2g(1) resonance is identified as the high energy C exciton recently predicted [D. Y. Qiu, F. H. da Jornada, and S. G. Louie, Phys. Rev. Lett. 111, 216805 (2013)].

Comparative study of Raman spectroscopy in graphene and MoS2-type transition metal dichalcogenides.

CONSPECTUS: Raman spectroscopy is one of the most powerful experimental tools to study graphene, since it provides much useful information for sample characterization. In this Account, we show that this technique is also convenient to study other bidimensional materials beyond graphene, and we will focus on the semiconducting transition metal dichalcogenides (MX2), specifically on MoS2 and WS2. We start by comparing the atomic structure of graphene and 2H-MX2 as a function of the number of layers in the sample. The first-order Raman active modes of each material can be predicted on the basis of their corresponding point-group symmetries. We show the analogies between graphene and 2H-MX2 in their Raman spectra. Using several excitation wavelengths in the visible range, we analyze the first- and second-order features presented by each material. These are the E2g and 2TO(K) bands in graphene (also known as the G and 2D bands, respectively) and the A1', E', and 2LA(M) bands in 2H MX2. The double-resonance processes that originate the second-order bands are different for both systems, and we will discuss them in terms of the different electronic structure and phonon dispersion curves presented by each compound. According to the electronic structure of graphene, which is a zero band gap semiconductor, the Raman spectrum is resonant for all the excitation wavelengths. Moreover, due to the linear behavior of the electronic dispersion near the K point, the double-resonance bands of graphene are dispersive, since their frequencies vary when we change the laser energy used for the sample excitation. In contrast, the semiconducting MX2 materials present an excitonic resonance at the direct gap, and consequently, the double-resonance Raman bands of MX2 are not dispersive, and only their intensities depend on the laser energy. In this sense, resonant Raman scattering experiments performed in transition metal dichalcogenides using a wide range of excitation energies can provide information about the electronic structure of these materials, which is complementary to other optical spectroscopies, such as absorption or photoluminescence. Raman spectroscopy can also be useful to address disorder in MX2 samples in a similar way as it is used in graphene. Both materials exhibit additional Raman features associated with phonons within the interior of the Brillouin zone that are activated by the presence of defects and that are not observed in pristine samples. Such is the case of the well-known D band of graphene. MX2 samples present analogous features that are clearly observed at specific excitation energies. The origins of these double-resonance Raman bands in MX2 are still subjects of current research. Finally, we discuss the suitability of Raman spectroscopy as a strain or doping sensor. Such applications of Raman spectroscopy are being extensively studied in the case of graphene, and considering its structural analogies with MX2 systems, we show how this technique can also be used to provide strain/doping information for transition metal dichalcogenides.

Defect-induced supercollision cooling of photoexcited carriers in graphene.

Defects play a fundamental role in the energy relaxation of hot photoexcited carriers in graphene, thus a complete understanding of these processes are vital for improving the development of graphene devices. Recently, it has been theoretically predicted and experimentally demonstrated that defect-assisted acoustic phonon supercollision, the collision between a carrier and both an acoustic phonon and a defect, is an important energy relaxation process for carriers with excess energy below the optical phonon emission. Here, we studied samples with defects optically generated in a controlled manner to experimentally probe the supercollision model as a function of the defect density. We present pump and probe transient absorption measurements showing that the decay time decreases as the density of defect increases as predicted by the supercollision model.

Observation of layer-breathing mode vibrations in few-layer graphene through combination Raman scattering.

We report the observation of layer-breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from two to six layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm(-1). From double resonance theory, we assign the feature as the LO+ZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO). The LOZO' Raman band is found to exhibit multiple peaks with a unique line shape for each layer thickness and stacking order. These complex line shapes of the LOZO'-mode arise both from the material-dependent selection of different phonons in the double-resonance Raman process and from the detailed structure of the different branches of LBM in FLG.