ABSTRACT
The helicity of three-dimensional (3D) topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy are combined to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi1 - x Sbx ultrathin films, down to few nanometers where confinement effects emerge. This large conversion efficiency is correlated, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. Both surface state robustness and sizeable conversion efficiency in epitaxial Bi1 - x Sbx thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.
ABSTRACT
Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low damping thin films of NiO/Pt. We evidence, experimentally and through modeling, two excitation processes of spin dynamics in NiO: an off-resonant instantaneous optical spin torque in (111) oriented films and a strain-wave-induced THz torque induced by ultrafast Pt excitation in (001) oriented films. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials.
ABSTRACT
The control of light-matter interaction at the most elementary level has become an important resource for quantum technologies. Implementing such interfaces in the THz range remains an outstanding problem. Here, we couple a single electron trapped in a carbon nanotube quantum dot to a THz resonator. The resulting light-matter interaction reaches the deep strong coupling regime that induces a THz energy gap in the carbon nanotube solely by the vacuum fluctuations of the THz resonator. This is directly confirmed by transport measurements. Such a phenomenon which is the exact counterpart of inhibition of spontaneous emission in atomic physics opens the path to the readout of non-classical states of light using electrical current. This would be a particularly useful resource and perspective for THz quantum optics.
ABSTRACT
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
ABSTRACT
Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristic times for large non-equilibrium carrier densities at high energy. An additional channel has been recently demonstrated in graphene/hBN heterostructures by emission of hBN hyperbolic phonon polaritons (HPhP) with picosecond decay time. Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. We further demonstrate the switching of carrier lifetime from ~30 ps (attributed to interband Auger) down to a few picoseconds upon ignition of HPhP relaxation at finite bias and/or with infrared excitation power. Our study opens interesting perspectives to exploit graphene/hBN heterostructures for THz lasing and highly sensitive THz photodetection as well as for phonon polariton optics.
ABSTRACT
Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures. These resonant nonlinearities continually attract attention, particularly in newly discovered materials. However, they are frequently not as heightened as currently predicted, limiting their exploitation in nanostructured nonlinear optics. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant destructive, as well as constructive, interference effects in complex systems. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband nonlinearities, we show that these giant interferences are a result of an unexpected interplay of the second-order nonlinear contributions of multiple light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of nanostructures, this advanced framework can be used as a novel, sensitive tool to elucidate the band structure properties of complex materials.
ABSTRACT
By combining the advantages of the high-speed ASOPS technology and efficient THz generation, we have realized a high-speed laser-based spectroscopic THz imaging system with more than 10,000 pixels per second acquisition speed and an excellent signal-to-noise ratio of more than 100. Unlike THz line cameras or mm-wave intensity detectors, the present device allows for a much higher spatial resolution and attributes each imaging pixel with phase and amplitude information up to several THz while simultaneously maintaining a very high scanning speed unmatched by any other technique presented so far. The high-speed acquisition allows for samples to be scanned even at sample velocities of 5 m/s or higher while preserving the fundamental resolution limit of the THz radiation, which is on the order of 500 µm in the present case.
ABSTRACT
Diffraction is the ultimate limit at which details of objects can be resolved in conventional optical spectroscopy and imaging systems. In the THz spectral range, spectroscopy systems increasingly rely on ultra-broadband radiation (extending over more 5 octaves) making a great challenge to reach resolution limited by diffraction. Here, we propose an original easy-to-implement wavefront manipulation concept to achieve ultrabroadband THz spectroscopy system with diffraction-limited resolution. Applying this concept to a large-area photoconductive emitter, we demonstrate diffraction-limited ultra-broadband spectroscopy system up to 14.5 THz with a dynamic range of 10(3). The strong focusing of ultrabroadband THz radiation provided by our approach is essential for investigating single micrometer-scale objects such as graphene flakes or living cells, and besides for achieving intense ultra-broadband THz electric fields.
ABSTRACT
The far-field emission profile of terahertz quantum cascade lasers (QCLs) in metal-metal waveguides is controlled in directionality and form through planar horn-type shape structures, whilst conserving a broad spectral response. The structures produce a gradual change in the high modal confinement of the waveguides and permit an improved far-field emission profile and resulting in a four-fold increase in the emitted output power. The two-dimensional far-field patterns are measured at 77 K and are agreement in with 3D modal simulations. The influence of parasitic high-order transverse modes is shown to be controlled by engineering the horn structure (ridge and horn widths), allowing only the fundamental mode to be coupled out.
ABSTRACT
We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a function of incident pulse duration (15-35 fs) and pump energy (2-30 nJ). Broadband spectroscopy of PTFE is shown. Numerical Drude-Lorentz simulations of the generated THz pulses are performed as a function of the excitation pulse duration, showing good agreement with the experimental data.
Subject(s)
Computer-Aided Design , Lasers , Lighting/instrumentation , Terahertz Radiation , Transducers , Electric Conductivity , Equipment Design , PhotonsABSTRACT
Graphene has been proposed as a particularly attractive material for the achievement of strong optical nonlinearities, in particular generation of terahertz radiation. However, owing to the particular symmetries of the C-lattice, second-order nonlinear effects such as difference-frequency or rectification processes are predicted to vanish in a graphene layer for optical excitations (âω â« 2EF) involving the two relativistic dispersion bands. Here we experimentally demonstrate that graphene excited by femtosecond optical pulses generate a coherent THz radiation ranging from 0.1 to 4 THz via a second-order nonlinear effect. We fully interpret its characteristics with a model describing the electron and hole states beyond the usual massless relativistic scheme. This second-order nonlinear effect is dynamical photon drag, which relies on the transfer of light momentum to the carriers by the ponderomotive electric and magnetic forces. The model highlights the key roles of next-C-neighbor couplings and of unequal electron and hole lifetimes in the observed second-order response. Finally, our results indicate that dynamical photon drag effect in graphene can provide emission up to 60 THz, opening new routes for the generation of ultrabroadband terahertz pulses.
ABSTRACT
Research on surface waves supported by metals at THz frequencies is experiencing a tremendous growth due to their potential for imaging, biological sensing and high-speed electronic circuits. Harnessing their properties is, however, challenging because these waves are typically poorly confined and weakly bound to the metal surface. Many design strategies have been introduced to overcome these limitations and achieve increased modal confinement, including patterned surfaces, coated waveguides and a variety of sub-wavelength geometries. Here we provide evidence, using a combination of numerical simulations and time-resolved experiments, that shrinking the transverse size of a generic metallic structure always leads to solutions with extreme field confinement. The existence of such a general behavior offers a new perspective on energy confinement and should benefit future developments in THz science and technology.
ABSTRACT
The dispersion relation and confinement of terahertz surface plasmon modes propagating along planar Goubau lines are studied using guided-wave time domain spectroscopy. We demonstrate the radial nature of the surface plasmon mode known as the Goubau mode and the transverse confinement of the electric field over a few tenths of microns (~l/10). We experimentally and computationally observed a transition of the shape of the THz pulses from unipolar to bipolar as the propagation distance increases, indicating that the Goubau line acts as a high-pass filter. The deviation of the dispersion relation curve from a linear law above 600 GHz is discussed.
ABSTRACT
We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.
ABSTRACT
We report the first demonstration of a terahertz photomixer made of ion-irradiated In(0.53)Ga(0.47)As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 microm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.
