ABSTRACT
Microwave intermittent drying was carried out on newly harvested corn kernels to study the effects of different microwave intermittent powers (900 W, 1800 W, 2700 W, and 3600 W) on the structural and functional properties of zein in corn kernels. The results showed that microwave drying could increase the thermal stability of zein in corn kernels. The solubility, emulsification activity index, and surface hydrophobicity increased under 1800 W drying power, which was due to the unfolding of the molecular structure caused by the increase in the content of irregular structure and the decrease in the value of particle size. At a drying power of 2700 W, there was a significant increase in grain size values and ß-sheet structure. This proves that at this time, the corn proteins in the kernels were subjected to the thermal effect generated by the higher microwave power, which simultaneously caused cross-linking and aggregation within the proteins to form molecular aggregates. The solubility, surface hydrophobicity, and other functional properties were reduced, while the emulsification stability was enhanced by the aggregates. The results of the study can provide a reference for the in-depth study of intermittent corn microwave drying on a wide range of applications of zein in corn kernels.
ABSTRACT
Covalent complexes of peanut protein isolate (PPI) and corn silk polysaccharide (CSP) (PPI-CSP) were prepared using an ultrasonic-assisted moist heat method to improve the functional properties of peanut protein isolate. The properties of the complexes were affected by the level of corn silk polysaccharide. By increasing the polysaccharide addition, the grafting degree first increased, and then tended to be flat (the highest was 38.85%); the foaming, foam stability, and solubility were also significantly improved. In a neutral buffer, the solubility of the sample with a protein/polysaccharide ratio of 2:1 was 73.69%, which was 1.61 times higher than that of PPI. As compared with PPI, the complexes had higher thermal stability and lower surface hydrophobicity. High addition of CSP could made the secondary structure of PPI change from ordered α-helix to disordered ß-sheet, ß-turn, and random coil structure, and the complex conformation become more flexible and loose. The results of multiple light scattering showed that the composite solution exhibited high stability, which could be beneficial to industrial processing, storage, and transportation. Therefore, the functional properties of peanut protein isolate glycosylation products could be regulated by controlling the amount of polysaccharide added.
ABSTRACT
Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the tunneling magnetoresistive heads have become a mainstream technology for the hard disk industry and will still be a technology of choice for future hard disk products.
