Light-induced photoluminescence enhancement in chiral CdSe quantum dot films.

Chiral quantum dots (QDs) are promising materials applied in many areas, such as chiral molecular recognition and spin selective filter for charge transport, and can be prepared by facile ligand exchange approaches. However, ligand exchange leads to an increase in surface defects and reduces the efficiencies of radiative recombination and charge transport, which restricts further applications. Here, we investigate the light-induced photoluminescence (PL) enhancement in chiral L- and D-cysteine CdSe QD thin films, providing a strategy to increase the PL. The PL intensity of chiral CdSe QD films can be significantly enhanced over 100 times by continuous UV laser irradiation, indicating a strong passivation of surface defects upon laser irradiation. From the comparative measurements of the PL intensity evolutions in vacuum, dry oxygen, air, and humid nitrogen atmospheres, we conclude that the mechanism of PL enhancement is photo-induced surface passivation with the assistance of water molecules.

Anomalous Laser-Fluence Dependence of Electron Spin Excitation in CdS Colloidal Quantum Dots: Surface Effects.

Electron spin dynamics in CdS quantum dots (QDs) with hole acceptor 1-octanethiol organic molecules are investigated by time-resolved ellipticity spectroscopy. An anomalous dependence of laser fluences on electron spin excitation for the first time is reported. Increasing the laser fluence, the electron spin is switched from one direction to an antiparallel direction (spin direction switching, SDS) when adding enough 1-octanethiol hole acceptors in an air atmosphere. The analysis shows that the electron spin direction changes from heavy hole excitation defined to spin-orbit split hole excitation defined. In as-grown CdS QDs with native ligands, laser-fluence-dependent SDS phenomena are absent. Electron wave function spread into 1-octanethiol molecules is demonstrated to be important for the presence of SDS phenomena. The finding here thus reveals the importance of surface conditions on electron spin excitation processes in semiconductor QDs and that the surface can be used as an important factor to manipulate the spin.

Methods for Obtaining One Single Larmor Frequency, Either v1 or v2, in the Coherent Spin Dynamics of Colloidal Quantum Dots.

The coexistence of two spin components with different Larmor frequencies in colloidal CdSe and CdS quantum dots (QDs) leads to the entanglement of spin signals, complicating the analysis of dynamic processes and hampering practical applications. Here, we explored several methods, including varying the types of hole acceptors, air or anaerobic atmosphere and laser repetition rates, in order to facilitate the obtention of one single Larmor frequency in the coherent spin dynamics using time-resolved ellipticity spectroscopy at room temperature. In an air or nitrogen atmosphere, manipulating the photocharging processes by applying different types of hole acceptors, e.g., Li[Et3BH] and 1-octanethiol (OT), can lead to pure spin components with one single Larmor frequency. For as-grown QDs, low laser repetition rates favor the generation of the higher Larmor frequency spin component individually, while the lower Larmor frequency spin component can be enhanced by increasing the laser repetition rates. We hope that the explored methods can inspire further investigations of spin dynamics and related photophysical processes in colloidal nanostructures.

Coherent Spin Dynamics of Localized Electrons in Monolayer MoS2.

Compared with itinerant electrons in monolayer transition-metal dichalcogenides, localized electrons exhibit coherent spin precession in transverse magnetic fields B and usually have longer spin relaxation times. Here, we uncover the intrinsic spin dephasing processes of localized electrons whose mechanism remains unclear. Electron spin coherence dynamics are studied by time-resolved Faraday rotation spectroscopy in monolayer MoS2, where four subensembles of localized electrons are found with different g factor values and inhomogeneous broadening. The spin dephasing rates of all four subensembles include a linearly B-dependent part due to g-factor inhomogeneity and a B-independent part dominated by electron-nuclear hyperfine interaction and/or anisotropic exchange interaction. The hyperfine-induced spin dephasing time is ∼30-40 ns, and the anisotropic exchange-induced spin dephasing time is on the order of subnanoseconds. The findings give insight into the coherent spin dynamics of localized electrons in monolayers and the interaction between the electron spin and its environment.

Hyperfine-Induced Electron-Spin Dephasing in Negatively Charged Colloidal Quantum Dots: A Survey of Size Dependence.

The electron spin relaxation processes are complicated in semiconductor quantum dots. Different spin relaxation mechanisms may result in an increased or decreased spin relaxation rate with the size. The information on size-dependent spin dynamics helps to clarify and better understand the underlying spin relaxation processes. We investigate the size dependence of the electron spin dynamics in negatively photocharged CdSe and CdS colloidal quantum dots by time-resolved ellipticity spectroscopy. It is revealed that the electron spin dephasings of photodoped electron in zero or weak magnetic fields are dominated by the electron-nuclear hyperfine interaction for all measured samples. The hyperfine-induced electron spin dephasing time is ∼1-2 ns at room temperature and decreases with decreasing the size D. In addition to a size-dependent dephasing time that is directly proportional to D3/2, our measurements also show a size-independent time component, likely due to the laser-induced nuclear spin ordering.