1.55 µm wavelength band photonic crystal surface emitting laser with n-side photonic crystal and operation at up to 85 °C.

We describe the structure, fabrication, and measured performance of a 1543 nm wavelength photonic crystal surface emitting laser. An asymmetric double lattice design was used to achieve single mode lasing with side mode suppression ratios >40 dB. The photonic crystal was formed using encapsulated air holes in an n-doped InGaAsP layer with an InGaAlAs active layer then grown above it. In this way a laser with a low series resistance of 0.32 Ω capable of pulsed output powers of 171 mW at 25 °C and 40 mW at 85 °C was demonstrated.

Retinoids for the Treatment of Refractory Grover's Disease: A Case Series and Review of the Literature.

Grover's disease, also known as transient acantholytic dermatosis (TAD), currently has no published randomized control trials regarding the treatment of the disease; thus, evidence for treatment is largely derived from case studies and case reports. In this case series, we summarize the current treatment options for Grover's disease and discuss two cases of refractory Grover's disease treated with low-dose oral isotretinoin in patients who previously failed to reach clearance with multiple treatment options. Our aim is to highlight the efficacy of low-dose systemic retinoid therapy in Grover's disease when other treatment options prove unsatisfactory.

Terahertz generation mechanism in nano-grating electrode photomixers on Fe-doped InGaAsP.

We report the generation mechanism associated with nano-grating electrode photomixers fabricated on Fe-doped InGaAsP substrates. Two different emitter designs incorporating nano-gratings coupled to the same broadband antenna were characterized in a continuous-wave terahertz (THz) frequency system employing telecommunications wavelength lasers for generation and coherent detection. The current-voltage characteristics and THz emission bandwidth of the emitters is compared for different bias polarities and optical polarisations. The THz output from the emitters is also mapped as a function of the position of the laser excitation spot for both continuous-wave and pulsed excitation. This mapping, together with full-wave simulations of the structures, confirms the generation mechanism to be due to an enhanced optical electric field at the grating tips resulting in increased optical absorption, coinciding with a concentration of the electrostatic field.

113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array.

This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0V(pp) and 0.75-2.15V respectively.

Demonstration of error-free 25Gb/s duobinary transmission using a colourless reflective integrated modulator.

To realise novel, low-cost, photonic technologies that can support 100Gb/s Ethernet in next-generation dense wavelength-division-multiplexed metro transport networks, we are developing arrayed photonic integrated circuits that leverage colourless reflective modulators. Here, we demonstrate a single-channel, hybrid reflective electroabsorption modulator-based device, showing error-free 25.3Gb/s duobinary transmission with bit-error rates less than 1 × 10(-12) over 35km of standard single-mode fibre. We further confirm the modulator's colourless operation over the ITU C-band, with a 1.2dB variation in required optical signal-to-noise ratio over this wavelength range.

Monolithically integrated heterodyne optical phase-lock loop with RF XOR phase detector.

We present results for an heterodyne optical phase-lock loop (OPLL), monolithically integrated on InP with external phase detector and loop filter, which phase locks the integrated laser to an external source, for offset frequencies tuneable between 0.6 GHz and 6.1 GHz. The integrated semiconductor laser emits at 1553 nm with 1.1 MHz linewidth, while the external laser has a linewidth less than 150 kHz. To achieve high quality phase locking with lasers of these linewidths, the loop delay has been made less than 1.8 ns. Monolithic integration reduces the optical path delay between the laser and photodiode to less than 20 ps. The electronic part of the OPLL was implemented using a custom-designed feedback circuit with a propagation delay of ~1 ns and an open-loop bandwidth greater than 1 GHz. The heterodyne signal between the locked slave laser and master laser has phase noise below -90 dBc/Hz for frequency offsets greater than 20 kHz and a phase error variance in 10 GHz bandwidth of 0.04 rad2.

The Lowitja Institute: building a national strategic research agenda to improve the health of Aboriginal and Torres Strait Islander peoples.

With community involvement, research can be a powerful tool for closing the gap in Indigenous health disparity.

Traveling-wave Uni-Traveling Carrier photodiodes for continuous wave THz generation.

The design, experimental evaluation and performance of a Traveling-Wave Uni-Traveling Carrier photodiode for Terahertz generation are described and its advantages in terms of frequency response are demonstrated. The device delivered 148 microW at 457 GHz, 24 microW at 914 GHz when integrated with resonant antennas and 105 microW at 255 GHz, 30 microW at 408 GHz, 16 microW at 510 GHz and 10 microW at 612 GHz. Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz.