Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting Diodes.

In the present study, we found that α-alumina hollow nanoshell structure can exhibit an ultrahigh fracture strength even though it contains a significant number of nanopores. By systematically performing in situ mechanical testing and finite element simulations, we could measure that the fracture strength of an α-alumina hollow nanoshell structure is about four times higher than that of the conventional bulk size α-alumina. The high fracture strength of the α-alumina hollow nanoshell structure can be explained in terms of conventional fracture mechanics, in that the position and size of the nanopores are the most critical factors determining the fracture strength, even at the nanoscales. More importantly, by deriving a fundamental understanding, we would be able to provide guidelines for the design of reliable ceramic nanostructures for advanced GaN light-emitting diodes (LEDs). To that end, we demonstrated how our ultrastrong α-alumina hollow nanoshell structures could be successfully incorporated into GaN LEDs, thereby greatly improving the luminous efficiency and output power of the LEDs by 2.2 times higher than that of conventional GaN LEDs.

Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes.

Two-dimensional high-index-contrast dielectric gratings exhibit unconventional transmission and reflection due to their morphologies. For light-emitting devices, these characteristics help guided modes defeat total internal reflections, thereby enhancing the outcoupling efficiency into an ambient medium. However, the outcoupling ability is typically impeded by the limited index contrast given by pattern media. Here, we report strong-diffraction, high-index-contrast cavity engineered substrates (CESs) in which hexagonally arranged hemispherical air cavities are covered with a 80 nm thick crystallized alumina shell. Wavelength-resolved diffraction measurements and Fourier analysis on GaN-grown CESs reveal that the high-index-contrast air/alumina core/shell patterns lead to dramatic excitation of the low-order diffraction modes. Large-area (1075 × 750 µm(2)) blue-emitting InGaN/GaN light-emitting diodes (LEDs) fabricated on a 3 µm pitch CES exhibit ∼39% enhancement in the optical power compared to state-of-the-art, patterned-sapphire-substrate LEDs, while preserving all of the electrical metrics that are relevant to LED devices. Full-vectorial simulations quantitatively demonstrate the enhanced optical power of CES LEDs and show a progressive increase in the extraction efficiency as the air cavity volume is expanded. This trend in light extraction is observed for both lateral- and flip-chip-geometry LEDs. Measurements of far-field profiles indicate a substantial beaming effect for CES LEDs, despite their few-micron-pitch pattern. Near-to-far-field transformation simulations and polarization analysis demonstrate that the improved extraction efficiency of CES LEDs is ascribed to the increase in emissions via the top escape route and to the extraction of transverse-magnetic polarized light.

Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis.

The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres.

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting.

Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes.

Although graphene looks attractive to replace indium tin oxide (ITO) in optoelectronic devices, the luminous efficiency of light emitting diodes (LEDs) with graphene transparent conducting electrodes has been limited by degradation in graphene taking place during device fabrication. In this study, it was found that the quality of graphene after the device fabrication was a critical factor affecting the performance of GaN-based LEDs. In this paper, the qualities of graphene after two different device fabrication processes were evaluated by Raman spectroscopy and atomic force microscopy. It was found that graphene was severely damaged and split into submicrometer-scale islands bounded by less conducting boundaries when graphene was transferred onto LED structures prior to the GaN etching process for p-contact formation. On the other hand, when graphene was transferred after the GaN etch and p-contact metallization, graphene remained intact and the resulting InGaN/GaN LEDs showed electrical and optical properties that were very close to those of LEDs with 200 nm thick ITO films. The forward-voltages and light output powers of LEDs were 3.03 V and 9.36 mW at an injection current of 20 mA, respectively.

One-step graphene coating of heteroepitaxial GaN films.

Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ~0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.

Vertical array of ZnO submicrorods on periodically polarity-inverted templates using solution method.

Vertically aligned ZnO nano/submicrorods are grown on periodically polarity-inverted (PPI) ZnO templates by a solution-based growth method without any catalyst. For the selective growth of ZnO submicrorods, PPI ZnO structures are used for templates made by using a polarity control technique of ZnO with CrN and Cr2O3 intermediate layers. After syntheses of ZnO nanostructures on PPI ZnO, the vertically aligned ZnO rods were grown only onto the Zn-polar regions.