Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices.

Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.

Weyl Fermion magneto-electrodynamics and ultralow field quantum limit in TaAs.

Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. TaAs is the prototypical example, where 24 Weyl points and 8 trivial Fermi surfaces make the interpretation of any experiment in terms of band topology ambiguous. We report magneto-infrared reflection spectroscopy measurements on TaAs. We observed sharp inter-Landau level transitions from a single pocket of Weyl Fermions in magnetic fields as low as 0.4 tesla. We determine the W2 Weyl point to be 8.3 meV below the Fermi energy, corresponding to a quantum limit­the field required to reach the lowest LL­of 0.8 tesla­unprecedentedly low for Weyl Fermions. LL spectroscopy allows us to isolate these Weyl Fermions from all other carriers in TaAs, and our result provides a way for directly exploring the more exotic quantum phenomena in Weyl semimetals, such as the chiral anomaly.

Unconventional valley-dependent optical selection rules and landau level mixing in bilayer graphene.

Selection rules are of vital importance in determining the basic optical properties of atoms, molecules and semiconductors. They provide general insights into the symmetry of the system and the nature of relevant electronic states. A two-dimensional electron gas in a magnetic field is a model system where optical transitions between Landau levels (LLs) are described by simple selection rules associated with the LL index N. Here we examine the inter-LL optical transitions of high-quality bilayer graphene by photocurrent spectroscopy measurement. We observed valley-dependent optical transitions that violate the conventional selection rules Δ|N| = ± 1. Moreover, we can tune the relative oscillator strength by tuning the bilayer graphene bandgap. Our findings provide insights into the interplay between magnetic field, band structure and many-body interactions in tunable semiconductor systems, and the experimental technique can be generalized to study symmetry-broken states and low energy magneto-optical properties of other nano and quantum materials.

Author Correction: Unconventional valley-dependent optical selection rules and landau level mixing in bilayer graphene.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Zeeman-Induced Valley-Sensitive Photocurrent in Monolayer MoS_{2}.

The control of the valley degree of freedom lies at the core of interest in monolayer transition metal dichalcogenides, where specific valley-spin excitation can be created using circularly polarized light. Measurement and manipulation of the valley index has also been achieved, but mainly with purely optical methods. Here, in monolayer MoS_{2}, we identify a response to the valley polarization of excitons in the longitudinal electrical transport when the valley degeneracy is broken by an out-of-plane magnetic field B_{z}. The spin information is also simultaneously determined with spin-sensitive contacts. In the presence of B_{z}, a significant modulation of the photocurrent is observed as a function of the circular polarization state of the excitation. We attribute this effect to unbalanced transport of valley-polarized trions induced by the opposite Zeeman shifts of two (K and K^{'}) valleys. Our interpretation is supported by the contrasting behavior in bilayer MoS_{2}, as well as the observed doping and spatial dependence of the valley photocurrent.

Landau Quantization in Coupled Weyl Points: A Case Study of Semimetal NbP.

Weyl semimetal (WSM) is a newly discovered quantum phase of matter that exhibits topologically protected states characterized by two separated Weyl points with linear dispersion in all directions. Here, via combining theoretical analysis and magneto-infrared spectroscopy of an archetypal Weyl semimetal, niobium phosphide, we demonstrate that the coupling between Weyl points can significantly modify the electronic structure of a WSM and provide a new twist to the protected states. These findings suggest that the coupled Weyl points should be considered as the basis for analysis of realistic WSMs.

Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap.

Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys in which the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short-period InAs1-xSbx/InAs1-ySby metamorphic superlattices with the bandgap tuned to zero by adjusting the superlattice period and layer strain. The new material has anisotropic carrier dispersion: the carrier energy associated with the in-plane motion is proportional to the wave vector and characterized by the Fermi velocity vF, and the dispersion corresponding to the motion in the growth direction is quadratic. Experimental estimate of the Fermi velocity gives vF = 6.7 × 105 m/s. Remarkably, the Fermi velocity in this system can be controlled by varying the overlap between electron and hole states in the superlattice. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge-carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.

Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells.

Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.