Design of an aluminium ion battery with a graphyne host: lowest volume expansion, high stability and low diffusion barriers.

Commercialization of aluminium ion battery (AIB) requires limited volume expansion of the host cathode materials after AlCl4 intercalation, lower activation barrier, high theoretical specific capacity (TSC), cyclic durability and thermodynamic stability. Most of the carbon and non-carbon based cathode hosts explored so far failed to address the issue of volume expansion and there is a lack of clarity about thermodynamic stability. In this work, we employed multipronged first principles computational approaches on α- and γ-graphyne (GY) and showed that α-GY as a promising cathode host addresses each of the above concerns. Both α and γ-GYs provide ample space to accommodate more number of AlCl4 molecules leading to a high TSC of 186 mA h g-1 and open circuit voltages of 2.18 and 2.22 V, respectively. The absence of bond dissociation of AlCl4 and deformation of GY sheets at 300 and 600 K, as revealed by ab initio molecular dynamics (AIMD) simulation, indicates the stability of α- and γ-GY with adsorbed AlCl4. α-GY after intercalation shows a volume expansion of 186% which is the lowest among the cathode materials studied so far. The negligible expansion energy per unit surface area (∼0.003 eV Å-2) ensures the reversibility and hence cyclic durability of α-GY. Although the γ-GY shows a volume expansion of 249%, it is still promising. The NEB based diffusion study on monolayer and bilayer GY estimates the activation barriers to be (0.26, 0.06 eV) and (0.42, 0.16 eV) for α and γ phases, respectively. These values are either comparable to or lower than those of earlier reported cathode hosts.

Development of short and long-range magnetic order in the double perovskite based frustrated triangular lattice antiferromagnet Ba[Formula: see text]MnTeO[Formula: see text].

Frustrated magnets based on oxide double perovskites offer a viable ground wherein competing magnetic interactions, macroscopic ground state degeneracy and complex interplay between emergent degrees of freedom can lead to correlated quantum phenomena with exotic excitations highly relevant for potential technological applications. By local-probe muon spin relaxation ([Formula: see text]SR) and complementary thermodynamic measurements accompanied by first-principles calculations, we here demonstrate novel electronic structure and magnetic phases of Ba[Formula: see text]MnTeO[Formula: see text], where Mn[Formula: see text] ions with S = 5/2 spins constitute a perfect triangular lattice. Magnetization results evidence the presence of strong antiferromagnetic interactions between Mn[Formula: see text] spins and a phase transition at [Formula: see text] = 20 K. Below [Formula: see text], the specific heat data show antiferromagnetic magnon excitations with a gap of 1.4 K, which is due to magnetic anisotropy. [Formula: see text]SR reveals the presence of static internal fields in the ordered state and short-range spin correlations high above [Formula: see text]. It further unveils critical slowing-down of spin dynamics at [Formula: see text] and the persistence of spin dynamics even in the magnetically ordered state. Theoretical studies infer that Heisenberg interactions govern the inter- and intra-layer spin-frustration in this compound. Our results establish that the combined effect of a weak third-nearest-neighbour ferromagnetic inter-layer interaction (owing to double-exchange) and intra-layer interactions stabilizes a three-dimensional magnetic ordering in this frustrated magnet.

A generic Slater-Koster description of the electronic structure of centrosymmetric halide perovskites.

The halide perovskites have truly emerged as efficient optoelectronic materials and show the promise of exhibiting nontrivial topological phases. Since the bandgap is the deterministic factor for these quantum phases, here, we present a comprehensive electronic structure study using first-principle methods by considering nine inorganic halide perovskites CsBX3 (B = Ge, Sn, Pb; X = Cl, Br, I) in their three structural polymorphs (cubic, tetragonal, and orthorhombic). A series of exchange-correlation (XC) functionals are examined toward accurate estimation of the bandgap. Furthermore, while 13 orbitals are active in constructing the valence and conduction band spectra, here, we establish that a 4 orbital based minimal basis set is sufficient to build the Slater-Koster tight-binding (SK-TB) model, which is capable of reproducing the bulk and surface electronic structures in the vicinity of the Fermi level. Therefore, like the Wannier based TB model, the presented SK-TB model can also be considered an efficient tool to examine the bulk and surface electronic structures of the halide family of compounds. As estimated by comparing the model study and DFT band structure, the dominant electron coupling strengths are found to be nearly independent of XC functionals, which further establishes the utility of the SK-TB model.

Metal-insulator transition in epitaxial Ga-doped ZnO films via controlled thickness.

Understanding and tuning of metal-insulator transition (MIT) in oxide systems is an interesting and active research topics of condensed matter physics. We report thickness dependent MIT in Ga-doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film (6 nm) exhibits a resistivity of 0.05 Ω cm, lying in the insulating regime, the thickest (51 nm) has resistivity of 6.6 × 10-4 Ω cm which shows metallic type of conduction. Our analysis reveals that the Mott's variable range hopping model governs the insulating behavior in the 6 nm film whereas the 2D weak localization (WL) phenomena is appropriate to explain the electron transport in the thicker Ga:ZnO films. Magnetoresistance study further confirms the presence of strong localization in 6 nm film while WL is observed in 20 nm and above thicker films. From the density functional calculations, it is found that due to surface reconstruction and Ga doping, strong crystalline disorder sets in very thin films to introduce localized states and thereby, restricts the donor electron mobility.

Maximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi1-xCaxFe1-yTiyO3-δ Thin-Film Solar Cells.

Designing solid-state perovskite oxide solar cells with large short circuit current (JSC) and open circuit voltage (VOC) has been a challenging problem. Epitaxial BiFeO3 (BFO) films are known to exhibit large VOC (>50 V). However, they exhibit low JSC (≪µA/cm2) under 1 Sun illumination. In this work, taking polycrystalline BiFeO3 thin films, we demonstrate that oxygen vacancies (VO) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve high JSC and VOC simultaneously. While aliovalent substitution (Ca2+ at Bi3+ site) is used to control the lattice VO, Ca and Ti cosubstitution is used to bring out only GB-VO. Fluorine-doped tin oxide (FTO)/Bi1-xCaxFe1-yTiyO3-δ/Au devices are tested for photovoltaic characteristics. Introducing VO increases the photocurrent by four orders (JSC ∼ 3 mA/cm2). On the contrary, VOC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO3. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-VO. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in JSC. The cosubstitution, following a charge compensation mechanism, decreases the lattice VO concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve VOC (3-8 V) much larger than that of BiFeO3 (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice VO concentration dominates GB-VO concentration. Notwithstanding, both lattice and GB-VO contribute to the increase in JSC; the former weakens ferroelectricity, and as a consequence, undesirably, VOC is lowered well below 0.5 V. Using optimum JSC and VOC, we demonstrate that the efficiency ∼0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.

Orbital driven impurity spin effect on the magnetic order of quasi-3D cupric oxide.

Density functional calculations are performed to study the magnetic order of the severely distorted square planar cupric oxide (CuO) and local spin disorder in it in the presence of the transition metal impurities M (=Cr, Mn, Fe, Co and Ni). The distortion in the crystal structure, arisen to reduce the band energy by minimizing the covalent interaction, creates two crisscrossing zigzag spin-1/2 chains. From the spin dimer analysis we find that while the spin chain along [Formula: see text] has strong Heisenberg type antiferromagnetic coupling (J ~ 127 meV), along [Formula: see text] it exhibits weak, but robust, ferromagnetic coupling (J ~ 9 meV) mediated by reminiscent p-d covalent interactions. The impurity effect on the magnetic ordering is independent of M and purely orbital driven. If the given spin-state of M is such that the [Formula: see text] orbital is spin-polarized, then the original long-range ordering is maintained. However, if [Formula: see text] orbital is unoccupied, the absence of corresponding covalent interaction breaks the weak ferromagnetic coupling and a spin-flip takes place at the impurity site leading to breakdown of the long range magnetic ordering.

First principles study of the electronic structure and magnetic properties of spin chain compounds: Ca3ZnMnO6 and Ca3ZnCoO6.

We have studied the electronic structure and magnetism of the spin chain compounds Ca3ZnMnO6 and Ca3ZnCoO6 using density functional theory with generalised gradient approximation (GGA). In agreement with experiment our calculations reveal that high spin (HS) state for Mn(4+) ion and low spin (LS) state for Co(4+) ion stabilize the magnetic structure of the respective compounds. The magnetic exchange paths, calculated using Nth order muffin-tin orbital downfolding method, shows dominant intra-chain exchange interaction between the magnetic ions (Mn, Co) is antiferromagnetic for Ca3ZnMnO6 and ferromagnetic for Ca3ZnCoO6. The magnetic order of both the compounds is in accordance with the Goodenough-Kanamori-Anderson rules and is consistent with the experimental results. Finally we have investigated the importance of spin-orbit coupling (SOC) in these compounds. While SOC practically has no effect for the Mn system, it is strong enough to favor the spin quantization along the chain direction for the Co system in the LS state.

Unconventional Magnetism and Band Gap Formation in LiFePO4: Consequence of Polyanion Induced Non-planarity.

Oxygen plays a critical role in strongly correlated transition metal oxides as crystal field effect is one of the key factors that determine the degree of localization of the valence d/f states. Based on the localization, a set of conventional mechanisms such as Mott-Hubbard, Charge-transfer and Slater were formulated to explain the antiferromagnetic and insulating (AFI) phenomena in many of these correlated systems. From the case study on LiFePO4, through density-functional calculations, we demonstrate that none of these mechanisms are strictly applicable to explain the AFI behavior when the transition metal oxides have polyanions such as (PO4)(3-). The symmetry-lowering of the metal-oxygen complex, to stabilize the polyanion, creates an asymmetric crystal field for d/f states. In LiFePO4 this field creates completely non-degenerate Fe-d states which, with negligible p-d and d-d covalent interactions, become atomically localized to ensure a gap at the Fermi level. Due to large exchange splitting, high spin state is favored and an antiferromagnetic configuration is stabilized. For the prototype LiFePO4, independent electron approximation is good enough to obtain the AFI ground state. Inclusion of additional correlation measures like Hubbard U simply amplifies the gap and therefore LiFePO4 can be preferably called as weakly coupled Mott insulator.

Spin-polarized two-dimensional electron gas at oxide interfaces.

The possibility of formation of a fully spin-polarized 2D electron gas at the SrMnO_3/(LaMnO_3)_1/SrMnO_3 heterostructure is predicted from density-functional calculations. The La(d) electrons become confined in the direction normal to the interface in the electrostatic potential well of the positively charged layer of La atoms, acting as electron donors. These electrons mediate a ferromagnetic alignment of the Mn t_2g spins near the interface via Zener double exchange and become, in turn, spin-polarized due to the internal magnetic fields of the Mn moments.

Electron leakage and double-exchange ferromagnetism at the interface between a metal and an antiferromagnetic insulator: CaRuO3/CaMnO3.

Density-functional electronic structure studies of a prototype interface between a paramagnetic metal and an antiferromagnetic (AFM) insulator (CaRuO(3)/CaMnO(3)) reveal the exponential leakage of the metallic electrons into the insulator side. The leaked electrons in turn control the magnetism at the interface via the ferromagnetic (FM) Anderson-Hasegawa double exchange, which competes with the AFM superexchange of the bulk CaMnO3. The competition produces a FM interfacial CaMnO3 layer (possibly canted); but beyond this layer, the electron penetration is insufficient to alter the bulk magnetism.