ABSTRACT
Electron correlation often produces a variety of electrically insulating states caused by self-organization of electrons, which are particularly stable at commensurate fillings. Although collapsing such ordered states by minute external stimuli has been a key strategy toward device applications, it is difficult to access their true electronic phase boundaries due to the necessity of fine-tuning of material parameters. Here, we demonstrate the ambipolar resistance switching in Pr(1-x)Sr(x)MnO3 thin films (x = 0.5; an effectively 1/4-filled state) by quasi-continuous control of the doping level x and band-width W using gate-voltage and magnetic field, enabled by the extreme electric-field formed at the nanoscale interface generated in an electrolyte-gated transistor. An electroresistance peak with unprecedented steepness emerges on approaching a critical point in the x-W phase diagram. The technique opens a new route to Mott-insulator based transistors and to discovering singularities hitherto unnoticed in conventional bulk studies of strongly correlated electron systems.
ABSTRACT
A homogeneous colossal magnetoresistance (CMR) effect at low temperatures has been found in a thin-film perovskite manganite Pr0.5Sr0.5MnO3. The transition is driven not by the spin alignment as in usual CMR in bulk samples but by the localization-delocalization transition switched by the change in the effective dimensionality. Two-dimensional (x2-y2)-orbital ordering enhanced by the substrate strain is essential for the stabilization of the insulating localized state, which is on the verge of the first-order transition to the three-dimensional metallic ferromangetic state.
ABSTRACT
A novel structure of orbital ordering is found in a Nd0.5Sr0.5MnO3 thin film, which exhibits a clear first-order transition, by synchrotron x-ray diffraction measurements. Lattice parameters vary drastically at the metal-insulator transition at 170 K (= T(MI)), and superlattice reflections appear below 140 K (= T(CO)). The electronic structure between T(MI) and T(CO) is identified as A-type antiferromagnetic with a d(x2-y2) ferro-orbital ordering. The new type of antiferro-orbital ordering characterized by the wave vector (1/4 1/4 1/2) in cubic notation emerges below T(CO). The accommodation of the large lattice distortion at the first-order phase transition and the appearance of the novel orbital ordering are brought about by the anisotropy in the substrate, a new parameter for the phase control.
ABSTRACT
Persistent and reversible optical phase control has been achieved in a manganite thin film through a careful choice of the composition of Pr1-x(Ca1-ySr(y))xMnO3 near a multicritical point. Pulsed laser light brings the lower temperature metallic phase out of the higher temperature charge-ordered insulator, while a cw light reverses the effect by heating. We clearly demonstrate the two competing roles played by light, heating, and excitation across the charge gap, which are important in both the application and the understanding of the physics of electron correlation.
