ABSTRACT
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm-1) is much higher than that of the planar-type device (45.2 mA mm-1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec-1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
