ABSTRACT
The study of self-assembling nano-cones induced by irradiation of nanosecond Nd:YAG laser pulses on a surface of a Si1-xGe(x) solid solution is reported. It is shown that dynamics of nano-cones formation depends on concentration of Ge atoms (x) in Si lattice and on the intensity of laser radiation. Two different processes of nano-cones formation depending on x are observed. The first one-at higher concentration of Ge atoms x = 0.3-0.4 and the second one-at lower concentration of Ge atoms at x = 0.15 take place. At the first stage, similar processes of nano-cones formation occur. It means, at low intensity of laser radiation 1 < 2.0 MW/cm2 Ge atoms drift to the irradiated surface due to Thermo-gradient effect and Ge-rich phase is formed for both concentration ranges. The second stage is different for low and high Ge content ranges. At the higher concentration of Ge atoms and intensity of laser radiation 1 > 2.0 MW/cm2 nano-cones formation takes place by Stransky-Krastanov mode. On the same time, at lower concentration of Ge atoms cones look like "tree ring" growth due to melting of Ge separated islands on the irradiated surface at intensity of laser radiation 1 = 20 MW/cm2.
ABSTRACT
The study is focused on formation and optical properties of nanostructures induced by laser radiation on the surface of Si1-xGe(x)/Si hetero-structures. Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I = 7.0 MW/cm2. The huge "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76-1.54 eV) is explained by the quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm(-1) Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I = 20.0 MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation. Ellipsometric data confirm appearance of Ge-rich phase precipitates amounting to 7.1%, 6.4% of the total Ge content induced by laser radiation of intensities I1 = 20.0 MW/cm2, I2 = 7.0 MW/cm2 respectively.
