Highly Specific Loop-Mediated Isothermal Amplification Using Graphene Oxide-Gold Nanoparticles Nanocomposite for Foot-and-Mouth Disease Virus Detection.

Loop-mediated isothermal amplification (LAMP) is a molecular diagnosis technology with the advantages of rapid results, isothermal reaction conditions, and high sensitivity. However, this diagnostic system often produces false positive results due to a high rate of non-specific reactions caused by formation of hairpin structures, self-dimers, and mismatched hybridization. The non-specific signals can be due to primers used in the methods because the utilization of multiple LAMP primers increases the possibility of self-annealing of primers or mismatches between primers and templates. In this study, we report a nanomaterial-assisted LAMP method that uses a graphene oxide-gold nanoparticles (AuNPs@GO) nanocomposite to enable the detection of foot-and-mouth disease virus (FMDV) with high sensitivity and specificity. Foot-and-mouth disease (FMD) is a highly contagious and deadly disease in cloven-hoofed animals; hence, a rapid, sensitive, and specific detection method is necessary. The proposed approach exhibited high sensitivity and successful reduction of non-specific signals compared to the traditionally established LAMP assays. Additionally, a mechanism study revealed that these results arose from the adsorption of single-stranded DNA on AuNPs@GO nanocomposite. Thus, AuNPs@GO nanocomposite is demonstrated to be a promising additive in the LAMP system to achieve highly sensitive and specific detection of diverse diseases, including FMD.

Genetically Modified Ferritin Nanoparticles with Bone-Targeting Peptides for Bone Imaging.

Bone homeostasis plays a major role in supporting and protecting various organs as well as a body structure by maintaining the balance of activities of the osteoblasts and osteoclasts. Unbalanced differentiation and functions of these cells result in various skeletal diseases, such as osteoporosis, osteopetrosis, and Paget's disease. Although various synthetic nanomaterials have been developed for bone imaging and therapy through the chemical conjugation, they are associated with serious drawbacks, including heterogeneity and random orientation, in turn resulting in low efficiency. Here, we report the synthesis of bone-targeting ferritin nanoparticles for bone imaging. Ferritin, which is a globular protein composed of 24 subunits, was employed as a carrier molecule. Bone-targeting peptides that have been reported to specifically bind to osteoblast and hydroxyapatite were genetically fused to the N-terminus of the heavy subunit of human ferritin in such a way that the peptides faced outwards. Ferritin nanoparticles with fused bone-targeting peptides were also conjugated with fluorescent dyes to assess their binding ability using osteoblast imaging and a hydroxyapatite binding assay; the results showed their specific binding with osteoblasts and hydroxyapatite. Using in vivo analysis, a specific fluorescent signal from the lower limb was observed, demonstrating a highly selective affinity of the modified nanoparticles for the bone tissue. These promising results indicate a specific binding ability of the nanoscale targeting system to the bone tissue, which might potentially be used for bone disease therapy in future clinical applications.

Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor.

The fingerprint recognition has been widely used for biometrics in mobile devices. Existing fingerprint sensors have already been commercialized in the field of mobile devices using primarily Si-based technologies. Recently, mutual-capacitive fingerprint sensors have been developed to lower production costs and expand the range of application using thin-film technologies. However, since the mutual-capacitive method detects the change of mutual capacitance, it has high ratio of parasitic capacitance to ridge-to-valley capacitance, resulting in low sensitivity, compared to the self-capacitive method. In order to demonstrate the self-capacitive fingerprint sensor, a switching device such as a transistor should be integrated in each pixel, which reduces a complexity of electrode configuration and sensing circuits. The oxide thin-film transistor (TFT) can be a good candidate as a switching device for the self-capacitive fingerprint sensor. In this work, we report a systematic approach for self-capacitive fingerprint sensor integrating Al-InSnZnO TFTs with field-effect mobility higher than 30 cm2/Vs, which enable isolation between pixels, by employing industry-friendly process methods. The fingerprint sensors are designed to reduce parasitic resistance and capacitance in terms of the entire system. The excellent uniformity and low leakage current (<10-12) of the oxide TFTs allow successful capture of a fingerprint image.

High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature.

Highly moisture permeation resistive and transparent single layer thin films for the encapsulation of hydrogenated silicon oxynitrides (H:SiON) were deposited by plasma-enhanced chemical vapor deposition (PECVD) using silane (SiH4), nitrous oxide (N2O), ammonia (NH3), and hydrogen (H2) at 100 °C for applications to a top-emission organic light-emitting diode (TEOLED). Addition of H2 into the PECVD process of SiON film deposition afforded the hydrogenated SiON film, which showed not only improved optical properties such as transmittance and reflectance but also better barrier property to water permeation than PECVD SiON and even SiN x . The H:SiON film with thickness of only 80 nm exhibited water vapor transmission rate (WVTR) lower than 5 × 10-5 g per m2 per day in the test conditions of 38 °C and 100% humidity, where this WVTR is the measurement limit of the MOCON equipment. An additional coating of UV curable polymer enabled the H:SiON films to be flexible and to have very stable barrier property lower than 5 × 10-5 g per m2 per day even after a number of 10k times bending tests at a curvature radius of 1R. The mild H:SiON film process improved the electrical properties of top-emission OLEDs without generating any dark spots. Furthermore, single H:SiON films having high water vapor barrier could maintain the original illumination features of TEOLED longer than 720 hours. These excellent properties of the H:SiON thin films originated from the structural changes of the SiON material by the introduction of hydrogen.

Derivative-assisted classification of fractured zones crossing a deep borehole.

In this study, the derivative analysis using the derivative of drawdown with respect to log-time was utilized to determine candidates for hydraulic conductor domains (HCDs). At a 500-m deep borehole in the study site, the fractured rocks crossing the borehole were first classified in fractured and nonfractured zones by core logging and geophysical loggings, such as acoustic televiewing, density, and flow loggings. After conducting the hydraulic tests such as constant head withdrawal and recovery tests at the fractured zones and the nonfractured zones, the derivative analyses were carried out, of which the results were evaluated to determine the candidates for HCDs. For the nonfractured zones, the diagnostic plot has only a big hump indicating poor connection of the background fractures to the permeable geologic media, while those of the candidates for HCDs show various flow regimes. On the basis of these results, the candidates for HCDs among the fractured zones were determined. From discussion on the results, the combination of the spacing analysis and derivative analysis following a hydraulic test is recommended for determining the candidates for HCDs rather than other geophysical loggings.

Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition.

The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.

Phase-change InSbTe nanowires grown in situ at low temperature by metal-organic chemical vapor deposition.

Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 degrees C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper. Under high working pressure, the InTe phase was preferentially formed on the TiAlN electrode, and the InTe protrusions were nucleated on the InTe films under high supersaturation. The Sb was continuously incorporated into the InTe protrusions, which was grown as an IST nanowire. Phase-change-induced memory switching was realized in IST nanowires with a threshold voltage of about 1.6 V. The ability to grow IST nanowires at low temperature by MOCVD should open opportunities for investigation of the nanoscale phase-transition phenomena.