Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3-Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions.

In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3-Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications.

Correlation with the Microstructure and Synergistic Physiochemical Etching Resistance of Nanocomposites under Fluorine-Containing Plasma Conditions.

In the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the Y2O3 ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components. During this etching process, severe erosion and particles generated on the ceramic surface can have effects on overall equipment effectiveness. Herein, we report the outstanding plasma etching resistance of Y2O3-MgO nanocomposite ceramics under a CF4/Ar/O2 gas atmosphere; the erosion depth of this material is 40-79% of that of the reference materials, Y2O3 ceramics. In a robust approach involving effective control of the microstructure with different initial particles and sintering conditions, it is possible to understand the relationship between etching behavior and microstructure evolution of the nanocomposite ceramic. The results indicate that the nanocomposite with fine and homogeneous domain distribution can decrease particle generation and ameliorate its life cycle; accordingly, this is a promising alternative candidate material for ceramic components in plasma chambers.

Remarkable plasma-resistance performance by nanocrystalline Y2O3·MgO composite ceramics for semiconductor industry applications.

Motivated by recent finding of crystallographic-orientation-dependent etching behavior of sintered ceramics, the plasma resistance of nanocrystalline Y2O3-MgO composite ceramics (YM) was evaluated for the first time. We report a remarkably high plasma etching resistance of nanostructure YM surpassing the plasma resistance of commercially used transparent Y2O3 and MgAl2O4 ceramics. The pore-free YM ceramic with grain sizes of several hundred nm was fabricated by hot press sintering, enabling theoretical maximum densification at low temperature. The insoluble two components effectively suppressed the grain growth by mutual pinning. The engineering implication of the developed YM nanocomposite imparts enhanced mechanical reliability, better cost effectiveness with excellent plasma resistance property over their counterparts in plasma using semiconductor applications.

Photoluminescent and decay behaviors of Mn2+ and Ce3+ coactivated MgSiN2 phosphors for use in light-emitting-diode applications.

We examined the photoluminescent behaviors of MgSiN2:Mn2+ and MgSiN2:Ce3+,Mn2+ phosphors for use in white-light-emitting diodes. The red emission from MgSiN2:Mn2+ phosphors consisted of two Gaussian components, P1 from a single Mn2+ ion and P2 from either Mn2+ pairs or clusters. Decay analysis based on the Yokota and Tanimoto equation identified long decay for P1 and fast decay for P2. Most importantly, Ce3+ codoping enhanced Mn2+ emission intensity; in particular, emission at 460 nm excitations was promoted by the Ce3+ codoping.