ABSTRACT
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer advantages over traditional silicon in future electronics but are hampered by the prominent high contact resistance of metal-TMD interfaces, especially for p-type TMDs. Here, we present high-performance p-type MoTe2 field-effect transistors via a nondestructive van der Waals (vdW) transfer process, establishing low contact resistance between the 2D MoTe2 semiconductor and the PtTe2 semimetal. The integration of PtTe2 as contacts in MoTe2 field-effect transistors leads to significantly improved electrical characteristics compared to conventional metal contacts, evidenced by a mobility increase to 80 cm2 V-1 s-1, an on-state current rise to 5.0 µA/µm, and a reduction in Schottky barrier height (SBH) to 48 meV. Such a low SBH in quasi-van der Waals contacts can be assigned to the low electrical resistivity of PtTe2 and the high efficiency of carrier injection at the 2D semimetal/2D semiconductor interfaces. Imaging via transmission electron microscopy reveals that the 2D semimetal/two-dimensional semiconductor interfaces are atomically flat and exceptionally clean. This interface engineering strategy could enable low-resistance contacts based on vdW architectures in a facile manner, providing opportunities for 2D materials for next-generation optoelectronics and electronics.
ABSTRACT
The consideration of nonextensivity effects is crucial to the accurate diagnosis of plasma parameters; common plasma nonextensive parameters include electron nonextensive parameter and ion nonextensive parameter, and the former can be measured, while the ion nonextensive parameter cannot be measured yet. Here we show the measurement of ion nonextensive parameter of plasma based on the theory of nonextensive geodesic acoustic modes. We assume that the plasma to be measured can be described by nonextensive statistical mechanics, and on this basis, the nonextensive geodesic acoustic mode theory is established. Utilizing this theory, we have measured the ion nonextensive parameter [Formula: see text] which cannot be diagnosed even by a nonextensive single electric probe. Our research points out that the proposed measurement method of ion nonextensive parameter may play a role in plasma diagnosis and will help us to grasp the nonextensivity of plasma more precisely. We hope the proposed method of ion nonextensive parameter diagnosis based on the nonextensive geodesic acoustic mode theory can be the starting point of more complex ion nonextensive parameter diagnosis methods. In addition, the measurement of ion nonextensive parameter is closely related to the study of various plasma waves, instabilities, turbulence and abnormal transport, and a defined and quantitative test of nonextensive geodesic acoustic mode theory will bound up deeply with such developments.
ABSTRACT
Theoretical analysis and a large number of experiments have proved that plasma components do not satisfy Boltzmann-Gibbs statistics and can be well described by nonextensive statistical mechanics, while new plasma parameters, electron nonextensive parameters, which are introduced to describe the nonextensive properties of plasma, cannot be diagnosed yet. Here we show measurement of electron nonextensive parameters of plasma with a nonextensive single electric probe. Our results show that nonextensive electric probe may play a role in plasma diagnosis, measuring nonextensivity of plasma and improving diagnostic accuracy of other plasma parameters. We expect the proposed nonextensive single electric probe can be starting point of more complex nonextensive electric probe. In addition, nonextensive electric probe is an important means to study various plasma waves and instability, turbulence, and anomalous transport, and a definite and quantitative test of the theory of nonextensive geodetic acoustic models will be relevant to such development.