ABSTRACT
The Zintl phases, Yb14 MSb11 (M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb14MnSb11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA's deep space exploration. This study investigates the solid solution of Yb14Mg1-x Al x Sb11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy (N v = 8) band is responsible for the groundbreaking performance of Yb14 MSb11 This multiband understanding of the properties provides insight into other thermoelectric systems (La3-x Te4, SnTe, Ag9AlSe6, and Eu9CdSb9), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb14 MSb11 systems.
ABSTRACT
Doped and alloyed germanium nanocrystals (Ge NCs) are potential candidates for a variety of applications such as photovoltaics and near IR detectors. Recently, bismuth (Bi) as an n-type group 15 element was shown to be successfully and kinetically doped into Ge NCs through a microwave-assisted solution-based synthesis, although Bi is thermodynamically insoluble in bulk crystalline Ge. To expand the composition manipulation of Ge NCs, another more common n-type group 15 element for semiconductors, antimony (Sb), is investigated. Oleylamine (OAm)- and OAm/trioctylphosphine (TOP)-capped Sb-doped Ge NCs have been synthesized by the microwave-assisted solution reaction of GeI2 with SbI3. Passivating the Ge surface with a binary ligand system of OAm/TOP results in formation of consistently larger NCs compared to OAm alone. The TOP coordination on the Ge surface is confirmed by 31P NMR and SEM-EDS. The lattice parameter of Ge NCs increases with increasing Sb concentration (0.00-2.0 mol %), consistent with incorporation of Sb. An increase in the NC diameter with higher content of SbI3 in the reaction is shown by TEM. XPS and EDS confirm the presence of Sb before and after removal of surface ligands with hydrazine and recapping the Ge NC surface with dodecanethiol (DDT). EXAFS analysis suggests that Sb resides within the NCs on highly distorted sites next to a Ge vacancy as well as on the crystallite surface. High Urbach energies obtained from photothermal deflection spectroscopy (PDS) of the films prepared from pristine Ge NC and Sb-doped Ge NCs indicate high levels of disorder, in agreement with EXAFS data. Electrical measurements on TiO2-NC electron- and hole-only devices show an increase in hole conduction, suggesting that the Sb-vacancy defects are behaving as a p-type dopant in the Ge NCs, consistent with the vacancy model derived from the EXAFS results.
ABSTRACT
The mineral Zlatogorite, CuNiSb2, was synthesized in the laboratory for the first time by annealing elements at ambient pressure (CuNiSb2-AP). Rietveld refinement of synchrotron powder X-ray diffraction data indicates that CuNiSb2-AP crystallizes in the NiAs-derived structure (P3m1, #164) with Cu and Ni ordering. The structure consists of alternate NiSb6 and CuSb6 octahedral layers via face-sharing. The formation of such structure instead of metal disordered NiAs-type structure (P63/mmc, #194) is validated by the lower energy of the ordered phase by first-principle calculations. Interatomic crystal orbital Hamilton population, electron localization function, and charge density analysis reveal strong Ni-Sb, Cu-Sb, and Cu-Ni bonding and long weak Sb-Sb interactions in CuNiSb2-AP. The magnetic measurement indicates that CuNiSb2-AP is Pauli paramagnetic. First-principle calculations and experimental electrical resistivity measurements reveal that CuNiSb2-AP is a metal. The low Seebeck coefficient and large thermal conductivity suggest that CuNiSb2 is not a potential thermoelectric material. Single crystals were grown by chemical vapor transport. The high pressure sample (CuNiSb2-8 GPa) was prepared by pressing CuNiSb2-AP at 700 °C and 8 GPa. However, the structures of single crystal and CuNiSb2-8 GPa are best fit with a disordered metal structure in the P3m1 space group, corroborated by transmission electron microscopy.
ABSTRACT
Type I clathrates of the composition K8E8Ge38 (E = Al, Ga, In) were prepared via the reaction of KH with E and Ge and thermoelectric properties measured in order to compare to K8Al8Si38, a promising thermoelectric material. The structures were confirmed with Rietveld refinement of powder diffraction patterns obtaining lattice parameters of 10.7729(2) Å, 10.7469(5) Å, and 10.9975(6) Å for E = Al, Ga, and In, respectively. Samples of K8E8Ge38 with E = Al and Ga were consolidated via spark plasma sintering for property measurements and determined to be 94.2% and 81.4% dense, respectively. K8In8Ge38 showed significant decomposition after sintering with both elemental In and Ge present in the powder diffraction pattern. The thermoelectric properties of K8E8Ge38 (E = Al, Ga) from 300-10 K were measured on sintered pellets. K8Al8Ge38 was found to have a Seebeck coefficient, electrical resistivity, and thermal conductivity of -35.8 µV/K, 2.56 mΩ·cm, 1.37 W/m·K at 300 K, respectively. K8Ga8Ge38 was found to be a compensated semiconductor with a Seebeck coefficient, electrical resistivity, and thermal conductivity of 4.19 µV/K, 1080 mΩ·cm, and 1.05 W/m·K at 300 K, respectively. The resistivity of K8Al8Ge38 is 46 times lower than K8Al8Si38 which has a Seebeck coefficient of -90.0 µV/K and thermal conductivity of 1.77 W/mK at 300 K, suggesting that a solid solution of K8Al8Si38-xGe x has potential for optimal thermoelectric performance.
ABSTRACT
Earth abundant element clathrate phases are of interest for a number of applications ranging from photovoltaics to thermoelectrics. Silicon-containing type I clathrate is a framework structure with the stoichiometry A8-xSi46 (A = guest atom such as alkali metal) that can be tuned by alloying and doping with other elements. The type I clathrate framework can be described as being composed of two types of polyhedral cages made up of tetrahedrally coordinated Si: pentagonal dodecahedra with 20 atoms and tetrakaidecahedra with 24 atoms in the ratio of 2:6. The cation sites, A, are found in the center of each polyhedral cage. This review focuses on the newest discoveries in the group 13-silicon type I clathrate family: A8E8Si38 (A = alkali metal; E = Al, Ga) and their properties. Possible approaches to new phases based on earth abundant elements and their potential applications will be discussed.
