Thulium channel waveguide laser with 1.6 W of output power and ∼80% slope efficiency.

Laser experiments were performed on buried, ridge-type channel waveguides in 8 at.% thulium-doped, yttrium-gadolinium-lutetium co-doped potassium double tungstate. By pumping with a Ti:sapphire laser at 794 nm, 1.6 W of output power at 1.84 µm with a maximum slope efficiency of ∼80% was obtained in a laser resonator with a high output-coupling degree of 89%. To the best of our knowledge, this result represents the most efficient 2-µm channel waveguide laser to date.

Light turning mirrors for hybrid integration of SiON-based optical waveguides and photo-detectors.

For hybrid integration of an optical chip with an electronic chip containing photo-diodes and processing electronics, light must be coupled from the optical to the electronic chip. This paper presents a method to fabricate quasi-total-internal-reflecting mirrors on an optical chip, placed at an angle of 45° with the chip surface, that enable 90° out-of-plane light coupling between flip-chip bonded chips. The fabrication method utilizes a metal-free, parallel process and is fully compatible with conventional fabrication of optical chips. The mirrors are created using anisotropic etching of 45° facets in a Si substrate, followed by fabrication of the optical structures. After removal of the mirror-defining Si structures by isotropic etching, the obtained interfaces between optical structure and air direct the output from optical waveguides to out-of-plane photo-detectors on the electronic chip, which is aimed to be flip-chip mounted on the optical chip. For transverse-electric (transverse-magnetic) polarization simulations predict a functional loss of 7% (15%), while 7% (18%) is measured.

Miniature spectrometer and beam splitter for an optical coherence tomography on a silicon chip.

Optical coherence tomography (OCT) has enabled clinical applications that revolutionized in vivo medical diagnostics. Nevertheless, its current limitations owing to cost, size, complexity, and the need for accurate alignment must be overcome by radically novel approaches. Exploiting integrated optics, we assemble the central components of a spectral-domain OCT system on a silicon chip. The spectrometer comprises an arrayed-waveguide grating with 136-nm free spectral range and 0.21-nm wavelength resolution. The beam splitter is realized by a non-uniform adiabatic coupler with its 3-dB splitting ratio being nearly constant over 150 nm. With this device whose overall volume is 0.36 cm(3) we demonstrate high-quality in vivo imaging in human skin with 1.4-mm penetration depth, 7.5-µm axial resolution, and a signal-to-noise ratio of 74 dB. Considering the reasonable performance of this early OCT on-a-chip system and the anticipated improvements in this technology, a completely different range of devices and new fields of applications may become feasible.

Highly efficient Yb3+-doped channel waveguide laser at 981 nm.

Channel waveguide lasers operating at 981 nm are demonstrated in KY(1-x-y)Gd(x)Lu(y)(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.

Broad-spectral-range synchronized flat-top arrayed-waveguide grating applied in a 225-channel cascaded spectrometer.

We present a new synchronized design for flattening the passband of an arrayed-waveguide grating (AWG) over a broad wavelength range of 90 nm. A wavelength-insensitive 3-dB balanced coupler is designed to be used in duplicate in a Mach-Zehnder interferometer (MZI); the phase deviation created by one of the balanced couplers is cancelled by flipping the other coupler around. This MZI is arranged in tandem with the AWG such that the output signal of the MZI is the input signal of the AWG. We demonstrate a 5-channel, 18-nm-spacing AWG with a 0.5-dB bandwidth of 12 nm over a 90-nm spectral range. A low-loss cascaded AWG system is demonstrated by using the MZI-synchronized flat-top AWG as a primary filter.

Photonic generation of stable microwave signals from a dual-wavelength Al2O3:Yb3+ distributed-feedback waveguide laser.

We report the fabrication and characterization of a dual-wavelength distributed-feedback channel waveguide laser in ytterbium-doped aluminum oxide. Operation of the device is based on the optical resonances that are induced by two local phase shifts in the distributed-feedback structure. A stable microwave signal at ~15 GHz with a -3 dB width of 9 kHz was subsequently created via the heterodyne photodetection of the two laser wavelengths. The long-term frequency stability of the microwave signal produced by the free-running laser is better than ±2.5 MHz, while the power of the microwave signal is stable within ±0.35 dB.

Thulium channel waveguide laser in a monoclinic double tungstate with 70% slope efficiency.

Laser experiments were performed on buried, ridge-type channel waveguides in an 8 at. % thulium-doped, yttrium-gadolinium-lutetium codoped monoclinic double tungstate. A maximum slope efficiency of 70% and output powers up to 300 mW about 2.0 µm were obtained in a mirrorless laser resonator, by pumping with a Ti:sapphire laser near 800 nm. To the best of our knowledge, this result represents the most efficient 2 µm channel waveguide laser to date. Lasing is obtained at various wavelengths between 1810 nm and 2037 nm.

Raman spectroscopy with an integrated arrayed-waveguide grating.

An integrated arrayed-waveguide grating fabricated in silicon-oxynitride technology is applied to Raman spectroscopy. After its validation by reproducing the well-known spectrum of cyclohexane, polarized Raman spectra are measured of extracted human teeth containing localized initial carious lesions. Excellent agreement is obtained between the spectra of healthy and carious tooth enamel measured with our integrated device and spectra recorded using a conventional Raman spectrometer. Our results represent a step toward the realization of compact, hand-held, integrated spectrometers, e.g. for the detection of dental caries at an early stage.

Highly efficient, low-threshold monolithic distributed-Bragg-reflector channel waveguide laser in Al2O3:Yb3+.

We report the fabrication and performance of a highly efficient, monolithic distributed-Bragg-reflector channel waveguide laser in ytterbium-doped aluminum oxide. The 1 cm long device was fabricated on a standard thermally oxidized silicon substrate and was optically pumped with a 976 nm laser diode. Single-longitudinal-mode and single-polarization operation was achieved at a wavelength of 1021.2 nm. Continuous-wave output powers of up to 47 mW and a launched pump power threshold of 10 mW resulted in a slope efficiency of 67%.

Efficient KY1-x-yGdxLuy(WO4)2:Tm3+ channel waveguide lasers.

Gd3+(29.5%)-Lu3+(29.0%)-Tm3+(1.5%) co-doped KY(WO4)2 layers were grown onto KY(WO4)2 substrates by liquid-phase epitaxy. Ridge-type channel waveguides with a thickness of 6.6 µm and a width of 7.5-12.5 µm were microstructured 1.5 µm deep by Ar+-beam milling and overgrown with pure KY(WO4)2 as a cladding layer. An upper limit of ~0.11 dB/cm for the waveguide propagation loss at the laser wavelength was determined. Laser experiments with butt-coupled dielectric mirrors demonstrated maximum output powers of 149 mW and 76 mW and slope efficiencies of 31.5% and 17.0% when pumping at 794 nm and 802 nm in TM and TE polarization, respectively. The lowest threshold was 7 mW. The laser wavelength was found to shift from 1930 nm via 1906 nm to 1846 nm for outcoupling efficiencies from 2% via 8% to 2×8%.

Integrated Al2O3:Er3+ ring lasers on silicon with wide wavelength selectivity.

Integrated Al(2)O(3):Er(3+) channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling into and low laser output power coupling from the ring is achieved in a straightforward design. Output powers of up to 9.5 microW and slope efficiencies of up to 0.11% were measured while lasing was observed for a threshold diode-pump power as low as 6.4 mW for ring lasers with cavity lengths varying from 2.0 to 5.5 cm. Wavelength selection in the range 1530-1557 nm was demonstrated by varying the length of the output coupler from the ring.

Microstructured KY(WO(4))(2):Gd(3+), Lu(3+), Yb(3+) channel waveguide laser.

Epitaxially grown, 2.4-microm-thin layers of KY(WO(4))(2):Gd(3+), Lu(3+), Yb(3+), which exhibit a high refractive index contrast with respect to the undoped KY(WO(4))(2) substrate, have been microstructured by Ar beam milling, providing 1.4-microm-deep ridge channel waveguides of 2 to 7 microm width, and overgrown by an undoped KY(WO(4))(2) layer. Channel waveguide laser operation was achieved with a launched pump power threshold of only 5 mW, a slope efficiency of 62% versus launched pump power, and 76 mW output power.

Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al2O3:Er3+ on silicon.

We report the realization and performance of a distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate. The diode-pumped continuous-wave laser demonstrated a threshold of 2.2 mW absorbed pump power and a maximum output power of more than 3 mW with a slope efficiency of 41.3% versus absorbed pump power. Single-longitudinal-mode and single-polarization operation was achieved with an emission linewidth of 1.70+/-0.58 kHz (corresponding to a Q factor of 1.14 x 10(11)), which was centered at a wavelength of 1545.2 nm.

Tm:KY(WO(4))(2) waveguide laser.

High-quality monoclinic planar waveguide crystals of Tm-doped KY(WO(4))(2) were grown by liquid-phase epitaxy with several dopant concentrations and thicknesses. Waveguide lasing in the 2 mum spectral range was demonstrated in the fundamental mode. The maximum continuous-wave output power achieved was 32 mW using a Ti:sapphire laser pump near 800 nm.

Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation.

Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power threshold of 230 mW. Single-transverse-mode laser emission was observed with measured beam propagation factors M(2)(x) and M(2)(y) of 1.5 and 1.2, respectively. An output power of 12.4 mW for 1 W pump power was obtained with an output coupler of 4.6% transmission at the signal wavelength. Higher output powers were measured in waveguides with larger cross sections exhibiting multimode laser emission.

Single-transverse-mode Ti:sapphire rib waveguide laser.

Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison to their planar counterparts. Measured beam propagation factors M2x and M2y of 1.3 and 1.2, respectively, indicated single-transverse-mode emission. A quasi-cw output power of 27 mW for an absorbed pump power of 1W and a slope efficiency of 5.3% were obtained using an output coupler of 4.6% transmission with a pump duty cycle of 8%.

Continuous-wave broadband emitter based on a transition-metal-ion-doped waveguide.

We demonstrate the suitability of a simple continuous-wave-pumped transition-metal-ion-doped waveguide as a broadband light source in the wavelength region 600-1000 nm for interferometric applications. Spatially coherent (single mode in the confined direction), spectrally broadband (~130-nm FWHM) luminescence with output powers of several hundreds of microwatts is obtained from a Ti:sapphire planar waveguide with incident pump powers from an Ar-ion laser of up to 1 W. This result represents an increase in power by several orders of magnitude from previously reported simple broadband light sources in this wavelength range.

Diode-pumped 1.7-W erbium 3-mum fiber laser.

We report what is to our knowledge the first 3-mu;m fiber laser of the 1-W class. 1.7 W of output power and 17.3% slope efficiency (with respect to the launched pump power) at a wavelength of 2.71mum are demonstrated from a double-clad erbium-doped ZBLAN fiber diode pumped at 790 nm. Energy transfer from the Er(3+) lower laser level to a Pr(3+) codopant decreases ground-state bleaching and excited-state absorption, thus avoiding output-power saturation. This result represents more than an order-of-magnitude improvement over previous work of which we are aware. Advantages over current crystal-laser designs include nearly transverse-fundamental-mode operation, reduced thermal effects, and ease of use, e.g., in medical endoscopy.

Generation of high-power blue light in periodically poled LiNbO(3).

We report the generation of 450-mW average blue (473-nm) power by frequency doubling of a diode-pumped 946-nm Nd:YAG laser. We achieved pulsed operation at a high repetition rate (~160kHz) by driving the relaxation oscillations of the laser. A 40% conversion efficiency to the second harmonic was obtained in a single-pass, extracavity, first-order, quasi-phase-matched process in which periodically poled lithium niobate (period 4.5microm , thickness 0.5mm , and length 15mm) at 140 degrees C was used. The resulting high-power blue beam was circular in profile and nearly diffraction limited, indicating that photorefractive effects do not appear to limit device performance.

Three-transition cascade erbium laser at 1.7, 2.7, and 1.6 microm.

We report on an upconversion cascade laser in an erbium-doped ZBLAN fiber emitting simultaneously on the three transitions (4)S(3/2) ? (4)I(9/2) at 1.7 microm , (4)I(11/2) ? (4)I(13/2) at 2.7 microm , and (4)I(13/2) ? (4)I(15/2) at 1.6 microm . At moderate pump powers, the laser transition at 1.6 microm supports 2.7-microm lasing and permits a slope efficiency at 2.7 microm of 15% versus launched pump power. Above the threshold of upconversion lasing at 1.7 microm , the slope efficiency at 2.7 microm increases to 25.4%. Taking pump excited-state absorption into account, this value represents more than 90% of the theoretical slope efficiency. A transversely single-mode output power of 99mW is achieved at 2.7 microm.