Ultra-Low Loading of Gold on Nickel Foam for Nitrogen Electrochemistry.

Ammonia (NH3) is widely used in various fields, and it is also considered a promising carbon free energy carrier, due to its high hydrogen content. The nitrogen reduction reaction (NRR), which converts nitrogen into ammonia by using protons from water as the hydrogen source, is receiving a lot of attention, since effective process optimization would make it possible to overcome the Haber-Bosch method. In this study, we used a solution-based approach to obtain functionalized porous Ni foam substrates with a small amount of gold (<0.1 mg cm-1). We investigated several deposition conditions and obtained different morphologies. The electrochemical performance of various catalysts on the hydrogen evolution reaction (HER) and NRR has been characterized. The ammonia production yield was determined by chronoamperometry experiments at several potentials, and the results showed a maximum ammonia yield rate of 20 µg h-1 mgcat-1 and a Faradaic efficiency of 5.22%. This study demonstrates the potential of gold-based catalysts for sustainable ammonia production and highlights the importance of optimizing deposition conditions to improve the selectivity toward HER.

Developing the next generation of renewable energy technologies: an overview of low-TRL EU-funded research projects.

A cluster of eleven research and innovation projects, funded under the same call of the EU's H2020 programme, are developing breakthrough and game-changing renewable energy technologies that will form the backbone of the energy system by 2030 and 2050 are, at present, at an early stage of development. These projects have joined forces at a collaborative workshop, entitled ' Low-TRL Renewable Energy Technologies', at the 10th Sustainable Places Conference (SP2022), to share their insights, present their projects' progress and achievements to date, and expose their approach for exploitation and market uptake of their solutions.

Role of the Membrane Transport Mechanism in Electrochemical Nitrogen Reduction Experiments.

The electrochemical synthesis of ammonia through the nitrogen reduction reaction (NRR) is receiving much attention, since it is considered a promising alternative to the Haber-Bosch process. In NRR experiments, a Nafion membrane is generally adopted as a separator. However, its use is controversial since ammonia can be trapped in the membrane, to some extent, or even pass through it. We systematically investigate the interaction of a Nafion membrane with ammonia and with an electrolyte and compare it with Zirfon as a possible alternative separator. We show that Nafion containing ammonia can easily release it when immersed in a 0.1 M Na2SO4 ammonia-free electrolyte, due to the cation exchange mechanism (Na+-NH4+). Since Na2SO4 is a commonly adopted electrolyte for NRR experiments, this may cause serious measurement errors and non-reproducible results. The same experiments performed using the polysulfone Zirfon separator clearly show that it is immune to interactions with ammonia, because of its different ion conduction mechanism. The findings provide a deeper understanding of the choice of membrane and electrolyte to be adopted for NRR tests, and may allow one to obtain more accurate and reliable results.

Synthesis, Properties and Applications of Germanium Chalcogenides.

Germanium (Ge) chalcogenides are characterized by unique properties which make these materials interesting for a very wide range of applications, from phase change memories to ovonic threshold switches, from photonics to thermoelectric and photovoltaic devices [...].

Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.

In this study, we deposit a Ge-rich Ge-Sb-Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed to corroborate the results from the photoemission study. X-ray diffraction is used upon annealing to study the crystallization of such an alloy and identify the effects of phase separation and segregation of crystalline Ge with the formation of grains along the [111] direction, as expected for such Ge-rich Ge-Sb-Te alloys. In addition, we report on the electrical characterization of single memory cells containing the Ge-rich Ge-Sb-Te alloy, including I-V characteristic curves, programming curves, and SET and RESET operation performance, as well as upon annealing temperature. A fair alignment of the electrical parameters with the current state-of-the-art of conventional (GeTe)n-(Sb2Te3)m alloys, deposited by PVD, is found, but with enhanced thermal stability, which allows for data retention up to 230 °C.

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.

Enrichment of GeSbTe alloys with germanium has been proposed as a valid approach to increase the crystallization temperature and therefore to address high-temperature applications of non-volatile phase change memories, such as embedded or automotive applications. However, the tendency of Ge-rich GeSbTe alloys to decompose with the segregation of pure Ge still calls for investigations on the basic mechanisms leading to element diffusion and compositional variations. With the purpose of identifying some possible routes to limit the Ge segregation, in this study, we investigate Ge-rich Sb2Te3 and Ge-rich Ge2Sb2Te5 with low (<40 at %) or high (>40 at %) amounts of Ge. The formation of the crystalline phases has been followed as a function of annealing temperature by X-ray diffraction. The temperature dependence of electrical properties has been evaluated by in situ resistance measurements upon annealing up to 300 °C. The segregation and decomposition processes have been studied by scanning transmission electron microscopy (STEM) and discussed on the basis of density functional theory calculations. Among the studied compositions, Ge-rich Ge2Sb2Te5 is found to be less prone to decompose with Ge segregation.

Ni foam electrode solution impregnated with Ni-Fe X (OH) Y catalysts for efficient oxygen evolution reaction in alkaline electrolyzers.

Oxygen evolution reaction (OER) is a demanding step within the water splitting process for its requirement of a high overpotential. Thus, to overcome this unfavourable kinetics, an efficient catalyst is required to expedite the process. In this context, we report on Ni foam functionalised with low cost iron (Fe) and iron hydroxide (Fe(OH) X ), wet chemically synthesized as OER catalysts. The prepared catalyst based on iron hydroxide precipitate shows a promising performance, exhibiting an overpotential of 270 mV (at a current density of 10 mA cm-2 in 1 M KOH solution), an efficient Tafel slope of ∼50 mV dec-1 and stable chronopotentiometry. The promising performance of the anode was further reproduced in the overall water splitting reaction with a two electrode cell. The overall reaction requires a lower potential of 1.508 V to afford 10 mA cm-2, corresponding to 81.5% electrical to fuel efficiency.

SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.

Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3-4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge2Sb2Te5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge3Sb2Te6, Ge2Sb2Te5, and GeSb2Te4, alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge2Sb2Te5, the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories and in their data retention.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.