ABSTRACT
Reliable fabrication of large-area perovskite films with antisolvent-free printing techniques requires high-volatility solvents, such as 2-methoxyethanol (2ME), to formulate precursor inks. However, the fabrication of high-quality cesium-formamidinium (Cs-FA) perovskites has been hampered using volatile solvents due to their poor coordination with the perovskite precursors. Here, this issue is resolved by re-formulating a 2ME-based Cs0.05FA0.95PbI3 ink using pre-synthesized single crystals as the precursor instead of the conventional mixture of raw powders. The key to obtaining high-quality Cs-FA films lies in the removal of colloidal particles from the ink and hence the suppression of colloid-induced heterogeneous nucleation, which kinetically facilitates the growth of as-formed crystals toward larger grains and improved film crystallinity. Employing the precursor-engineered volatile ink in the vacuum-free, fully printing processing of solar cells (with carbon electrode), a power conversion efficiency (PCE) of 19.3%, a T80 (80% of initial PCE) of 1000 h in ISOS-L-2I (85 °C/1 Sun) aging test and a substantially reduced bill of materials are obtained. The reliable coating methodology ultimately enables the fabrication of carbon-electrode mini solar modules with a stabilized PCE of 16.2% (average 15.6%) representing the record value among the fully printed counterparts and a key milestone toward meeting the objectives for a scalable photovoltaic technology.
ABSTRACT
Sb2Se3 is an emerging and promising light-absorbing material with superior photovoltaic properties. However, the specific one-dimensional structure of Sb2Se3 limits the doping density, preventing a high built-in potential. Moreover, in the superstrate devices the back contact is often non-ohmic. In this work, we have successfully applied tungsten oxide (WO3-x) as a hole-transport layer in superstrate n-i-p Sb2Se3 solar cells. It is found that an interfacial dipole is formed at Sb2Se3/WO3-x interface via Sb-W bonds, which reduces the barrier for hole extraction. Meantime, gap states are present at a suitable energy level to serve as intermediate states for hole-transport from the Sb2Se3 absorber to the metal anode. In addition, the introduction of WO3-x can suppress carrier recombination at the back interface, enhance the built-in potential, and improve the spectral response in the long-wavelength region. Consequently, the superstrate devices with the incorporated WO3-x layer achieve a champion efficiency of 7.10% due to the enhancement of all device parameters. Furthermore, the all-inorganic devices with WO3-x hole-transport layer exhibit excellent air stability and thermal stability.
ABSTRACT
Metal halide perovskite solar cells (PSCs) have raised considerable scientific interest due to their high cost-efficiency potential for photovoltaic solar energy conversion. As PSCs already are meeting the efficiency requirements for renewable power generation, more attention is given to further technological barriers as environmental stability and reliability. However, the most major obstacle limiting commercialization of PSCs is the lack of a reliable and scalable process for thin film production. Here, a generic crystallization strategy that allows the controlled growth of highly qualitative perovskite films via a one-step blade coating is reported. Through rational ink formulation in combination with a facile vacuum-assisted precrystallization strategy, it is possible to produce dense and uniform perovskite films with high crystallinity on large areas. The universal application of the method is demonstrated at the hand of three typical perovskite compositions with different band gaps. P-i-n perovskite solar cells show fill factors up to 80%, underpinning the statement of the importance of controlling crystallization dynamics. The methodology provides important progress toward the realization of cost-effective large-area perovskite solar cells for practical applications.