Acoustic cavities in 2D heterostructures.

Two-dimensional (2D) materials offer unique opportunities in engineering the ultrafast spatiotemporal response of composite nanomechanical structures. In this work, we report on high frequency, high quality factor (Q) 2D acoustic cavities operating in the 50-600 GHz frequency (f) range with f × Q up to 1 × 1014. Monolayer steps and material interfaces expand cavity functionality, as demonstrated by building adjacent cavities that are isolated or strongly-coupled, as well as a frequency comb generator in MoS2/h-BN systems. Energy dissipation measurements in 2D cavities are compared with attenuation derived from phonon-phonon scattering rates calculated using a fully microscopic ab initio approach. Phonon lifetime calculations extended to low frequencies (<1 THz) and combined with sound propagation analysis in ultrathin plates provide a framework for designing acoustic cavities that approach their fundamental performance limit. These results provide a pathway for developing platforms employing phonon-based signal processing and for exploring the quantum nature of phonons.

Valley phenomena in the candidate phase change material WSe2(1-x)Te2x.

Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe2(1-x)Te2x. Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe2 to the semimetallic 1Td phase of WTe2. We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H-phase alloy. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe2. These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices.

Resonant optical Stark effect in monolayer WS2.

Breaking the valley degeneracy in monolayer transition metal dichalcogenides through the valley-selective optical Stark effect (OSE) can be exploited for classical and quantum valleytronic operations such as coherent manipulation of valley superposition states. The strong light-matter interactions responsible for the OSE have historically been described by a two-level dressed-atom model, which assumes noninteracting particles. Here we experimentally show that this model, which works well in semiconductors far from resonance, does not apply for excitation near the exciton resonance in monolayer WS2. Instead, we show that an excitonic model of the OSE, which includes many-body Coulomb interactions, is required. We confirm the prediction from this theory that many-body effects between virtual excitons produce a dominant blue-shift for photoexcitation detuned from resonance by less than the exciton binding energy. As such, we suggest that our findings are general to low-dimensional semiconductors that support bound excitons and other many-body Coulomb interactions.

Author Correction: Ultralow-loss polaritons in isotopically pure boron nitride.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Lone-Pair Electron-Driven Thermoelectrics at Room Temperature.

Identifying materials with good electron transport and poor thermal transport properties for thermoelectric applications has been challenging. Here we report a series of new materials including Tl3TaSe4 and Tl3VS4 with promising thermoelectric properties giving thermoelectric figure of merit, zT ≈ 0.8 at room temperature using first-principles calculations. This high zT stems from the high electrical conductivity and ultralow thermal conductivity (κ). We calculate κ ≈ 0.1-0.2 W/m·K from a phonon Boltzmann's transport equation and κ ≈ 0.3-0.4 W/m·K from the two-channel model. Low phonon group velocities due to weakly bonded Tl atoms and strong anharmonicity associated with s2 lone electrons pair give rise to such a low κ in these systems.

Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures.

Surface phonon polaritons (SPhPs), the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons, offer immense technological opportunities for nanophotonics in the infrared (IR) spectral region. However, once a particular material is chosen, the SPhP characteristics are fixed by the spectral positions of the optic phonon frequencies. Here, we provide a demonstration of how the frequency of these optic phonons can be altered by employing atomic-scale superlattices (SLs) of polar semiconductors using AlN/GaN SLs as an example. Using second harmonic generation (SHG) spectroscopy, we show that the optic phonon frequencies of the SLs exhibit a strong dependence on the layer thicknesses of the constituent materials. Furthermore, new vibrational modes emerge that are confined to the layers, while others are centered at the AlN/GaN interfaces. As the IR dielectric function is governed by the optic phonon behavior in polar materials, controlling the optic phonons provides a means to induce and potentially design a dielectric function distinct from the constituent materials and from the effective-medium approximation of the SL. We show that atomic-scale AlN/GaN SLs instead have multiple Reststrahlen bands featuring spectral regions that exhibit either normal or extreme hyperbolic dispersion with both positive and negative permittivities dispersing rapidly with frequency. Apart from the ability to engineer the SPhP properties, SL structures may also lead to multifunctional devices that combine the mechanical, electrical, thermal, or optoelectronic functionality of the constituent layers. We propose that this effort is another step toward realizing user-defined, actively tunable IR optics and sources.

Ultralow-loss polaritons in isotopically pure boron nitride.

Conventional optical components are limited to size scales much larger than the wavelength of light, as changes to the amplitude, phase and polarization of the electromagnetic fields are accrued gradually along an optical path. However, advances in nanophotonics have produced ultrathin, so-called 'flat' optical components that beget abrupt changes in these properties over distances significantly shorter than the free-space wavelength. Although high optical losses still plague many approaches, phonon polariton (PhP) materials have demonstrated long lifetimes for sub-diffractional modes in comparison to plasmon-polariton-based nanophotonics. We experimentally observe a threefold improvement in polariton lifetime through isotopic enrichment of hexagonal boron nitride (hBN). Commensurate increases in the polariton propagation length are demonstrated via direct imaging of polaritonic standing waves by means of infrared nano-optics. Our results provide the foundation for a materials-growth-directed approach aimed at realizing the loss control necessary for the development of PhP-based nanophotonic devices.

Controlling the H to T' structural phase transition via chalcogen substitution in MoTe2 monolayers.

New materials exhibiting reversible structural transitions are desired for a variety of applications, yet they are difficult to identify and stabilize. Monolayer MoTe2 has emerged as a good candidate as it displays a small energy difference between a semiconducting H and semimetallic T' phase; however, switching between the two phases is difficult. Here, we propose using chalcogen alloying to overcome this challenge. Using first principles density functional theory calculations, we investigate 7 MoTe2-xXx alloys (X = N, P, Sb, F, Br, I, and Se) at three concentrations. We find that the energy difference between the H and T' phases is dependent on the chemistry, size, and concentration of the dopant atom, providing significant control over the stability of the two phases. From the thermodynamic stability of these compounds, we show that several can be stabilized under the appropriate experimental conditions. We also find that P-alloying enhances the chemical reactivity of the basal plane towards a variety of adsorbates. Finally, we show that mechanical strain makes it is easier to stabilize and dynamically switch between the two states than in unalloyed MoTe2. Our results suggest that Te substitution in monolayer MoTe2 is a way to induce and control a reversible structural phase transition in this two-dimensional material system.

Atomic-scale photonic hybrids for mid-infrared and terahertz nanophotonics.

The field of nanophotonics focuses on the ability to confine light to nanoscale dimensions, typically much smaller than the wavelength of light. The goal is to develop light-based technologies that are impossible with traditional optics. Subdiffractional confinement can be achieved using either surface plasmon polaritons (SPPs) or surface phonon polaritons (SPhPs). SPPs can provide a gate-tunable, broad-bandwidth response, but suffer from high optical losses; whereas SPhPs offer a relatively low-loss, crystal-dependent optical response, but only over a narrow spectral range, with limited opportunities for active tunability. Here, motivated by the recent results from monolayer graphene and multilayer hexagonal boron nitride heterostructures, we discuss the potential of electromagnetic hybrids--materials incorporating mixtures of SPPs and SPhPs--for overcoming the limitations of the individual polaritons. Furthermore, we also propose a new type of atomic-scale hybrid--the crystalline hybrid--where mixtures of two or more atomic-scale (∼3 nm or less) polar dielectric materials lead to the creation of a new material resulting from hybridized optic phonon behaviour of the constituents, potentially allowing direct control over the dielectric function. These atomic-scale hybrids expand the toolkit of materials for mid-infrared to terahertz nanophotonics and could enable the creation of novel actively tunable, yet low-loss optics at the nanoscale.

van der Waals screening by single-layer graphene and molybdenum disulfide.

A sharp tip of atomic force microscope is employed to probe van der Waals forces of a silicon oxide substrate with adhered graphene. Experimental results obtained in the range of distances from 3 to 20 nm indicate that single-, double-, and triple-layer graphenes screen the van der Waals forces of the substrate. Fluorination of graphene, which makes it electrically insulating, lifts the screening in the single-layer graphene. The van der Waals force from graphene determined per layer decreases with the number of layers. In addition, increased hole doping of graphene increases the force. Finally, we also demonstrate screening of the van der Waals forces of the silicon oxide substrate by single- and double-layer molybdenum disulfide.

Tunable adsorbate-adsorbate interactions on graphene.

We propose a mechanism to control the interaction between adsorbates on graphene. The interaction between a pair of adsorbates--the change in adsorption energy of one adsorbate in the presence of another--is dominated by the interaction mediated by graphene's π electrons and has two distinct regimes. Ab initio density functional, numerical tight-binding, and analytical calculations are used to develop the theory. We demonstrate that the interaction can be tuned in a wide range by adjusting the adsorbate-graphene bonding or the chemical potential.

Chemical gradients on graphene to drive droplet motion.

This work demonstrates the production of a well-controlled, chemical gradient on the surface of graphene. By inducing a gradient of oxygen functional groups, drops of water and dimethyl-methylphosphonate (a nerve agent simulant) are "pulled" in the direction of increasing oxygen content, while fluorine gradients "push" the droplet motion in the direction of decreasing fluorine content. The direction of motion is broadly attributed to increasing/decreasing hydrophilicity, which is correlated to high/low adhesion and binding energy. Such tunability in surface chemistry provides additional capabilities in device design for applications ranging from microfluidics to chemical sensing.

Engineering graphene mechanical systems.

We report a method to introduce direct bonding between graphene platelets that enables the transformation of a multilayer chemically modified graphene (CMG) film from a "paper mache-like" structure into a stiff, high strength material. On the basis of chemical/defect manipulation and recrystallization, this technique allows wide-range engineering of mechanical properties (stiffness, strength, density, and built-in stress) in ultrathin CMG films. A dramatic increase in the Young's modulus (up to 800 GPa) and enhanced strength (sustainable stress ≥1 GPa) due to cross-linking, in combination with high tensile stress, produced high-performance (quality factor of 31,000 at room temperature) radio frequency nanomechanical resonators. The ability to fine-tune intraplatelet mechanical properties through chemical modification and to locally activate direct carbon-carbon bonding within carbon-based nanomaterials will transform these systems into true "materials-by-design" for nanomechanics.

Properties of fluorinated graphene films.

Graphene films grown on Cu foils have been fluorinated with xenon difluoride (XeF(2)) gas on one or both sides. When exposed on one side the F coverage saturates at 25% (C(4)F), which is optically transparent, over 6 orders of magnitude more resistive than graphene, and readily patterned. Density functional calculations for varying coverages indicate that a C(4)F configuration is lowest in energy and that the calculated band gap increases with increasing coverage, becoming 2.93 eV for one C(4)F configuration. During defluorination, we find hydrazine treatment effectively removes fluorine while retaining graphene's carbon skeleton. The same films may be fluorinated on both sides by transferring graphene to a silicon-on-insulator substrate enabling XeF(2) gas to etch the Si underlayer and fluorinate the backside of the graphene film to form perfluorographane (CF) for which calculated the band gap is 3.07 eV. Our results indicate single-side fluorination provides the necessary electronic and optical changes to be practical for graphene device applications.

Optical spin initialization and nondestructive measurement in a quantum dot molecule.

The spin of an electron in a self-assembled InAs/GaAs quantum dot molecule is optically prepared and measured through the trion triplet states. A longitudinal magnetic field is used to tune two of the trion states into resonance, forming a superposition state through asymmetric spin exchange. As a result, spin-flip Raman transitions can be used for optical spin initialization, while separate trion states enable cycling transitions for nondestructive measurement. With two-laser transmission spectroscopy we demonstrate both operations simultaneously, something not previously accomplished in a single quantum dot.

Role of defects in single-walled carbon nanotube chemical sensors.

We explore the electronic response of single-walled carbon nanotubes (SWNT) to trace levels of chemical vapors. We find adsorption at defect sites produces a large electronic response that dominates the SWNT capacitance and conductance sensitivity. This large response results from increased adsorbate binding energy and charge transfer at defect sites. Finally, we demonstrate controlled introduction of oxidation defects can be used to enhance sensitivity of a SWNT network sensor to a variety of chemical vapors.