PFOS Elicits Cytotoxicity in Neuron Through Astrocyte-Derived CaMKII-DLG1 Signaling In Vitro Rat Hippocampal Model.

Both epidemiological investigation and animal experiments demonstrated that pre-/postnatal exposure to perfluorooctane sulfonic acid (PFOS) could induce neurodevelopmental disorders. Previous studies showed that astrocyte was involved in PFOS-induced neurotoxicity, while little information is available. In the present study, the role of astrocyte-derived calmodulin-dependent protein kinase II (CaMKII)-phosphorylated discs large homolog 1 (DLG1) signaling in PFOS eliciting cytotoxicity in neuron was explored with primary cultured hippocampal astrocyte and neuron. The application of PFOS showed a decreased cell viability, synapse length and glutamate transporter 1 (GLT-1) expression, but an increased CaMKII, DLG1 and cyclic AMP response element binding protein (CREB) expression in primary cultured astrocyte. With 2-(2-hydroxyethylamino)-6-aminohexylcarbamic acid tert-butyl ester-9-isopropylpurine (CK59), the CaMKII inhibitor, the disturbed cell viability and molecules induced by PFOS could be alleviated (CREB expression was excluded) in astrocytes. The cytotoxic effect of neuron exposed to astrocyte conditional medium collected from PFOS (PFOS-ACM) pretreated with CK59 was also decreased. These results indicated that PFOS mediated GLT-1 expression through astrocyte-derived CaMKII-DLG signaling, which might be associated with injuries on neurons. The present study gave an insight in further exploration of mechanism in PFOS-induced neurotoxicity.

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device.

Two-dimensional (2D) black phosphorene (BP) field-effect transistors (FETs) show excellent device performance but suffer from serious instability under ambient conditions. Isoelectronic 2D germanium selenide (GeSe) shares many similar properties with 2D BP, such as high carrier mobility and anisotropy, but is stable under ambient conditions. Herein, we explore the quantum transport properties of sub-5 nm ML GeSe MOSFETs using first-principles quantum transport simulation. A p-type (zigzag-directed) device is superior to other types (n- and p-type armchair-directed and n-type zigzag-directed). The on-state current of p-type devices (zigzag-directed), even at a 1 nm gate-length, can fulfill the requirements of high-performance applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS, 2013 version). To the best of our knowledge, these ML GeSe MOSFETs have the smallest gate-length that can fulfill the ITRS HP on-state current requirements among reported 2D material FETs.

n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.

Recently, two-dimensional (2D) gallium nitride (GaN) was experimentally fabricated, and has promising applications in next-generation electronic and optoelectronic devices. A direct contact with metals to inject the carrier is often required for potential 2D GaN devices. Herein, the first systematic study on the interface properties of monolayer (ML) planar and buckled GaN with different metal electrodes (Al, Ti, Ag, Au, Sc, and Pt) in a field-effect transistor framework is presented using first-principles energy band calculations and quantum transport simulations. Because of moderate Fermi level pinning (electron pinning factor S = 0.63), ML planar GaN and the Ag electrode form an n-type lateral Schottky contact, while ML planar GaN and Ti, Al, and Au electrodes form a p-type lateral Schottky contact. The ML buckled GaN, Ag, Al, Ti, and Sc electrodes form a p-type lateral Schottky contact as a result of Fermi level pinning with a hole pinning factor of S = 0.75. Notably, a highly desirable n-type/p-type lateral ohmic contact is formed at the lateral interface of the ML planar GaN and Sc/Pt electrodes, and a p-type lateral ohmic contact is formed at the lateral interface of the ML buckled GaN and Pt/Au electrodes. Therefore, a low resistance contact can be realized in ML planar and buckled GaN devices.

Long-range superharmonic Josephson current and spin-triplet pairing correlations in a junction with ferromagnetic bilayers.

The long-range spin-triplet supercurrent transport is an interesting phenomenon in the superconductor/ferromagnet () heterostructure containing noncollinear magnetic domains. Here we study the long-range superharmonic Josephson current in asymmetric junctions. It is demonstrated that this current is induced by spin-triplet pairs - or + in the thick layer. The magnetic rotation of the particularly thin layer will not only modulate the amplitude of the superharmonic current but also realise the conversion between - and + . Moreover, the critical current shows an oscillatory dependence on thickness and exchange field in the layer. These effect can be used for engineering cryoelectronic devices manipulating the superharmonic current. In contrast, the critical current declines monotonically with increasing exchange field of the layer, and if the layer is converted into half-metal, the long-range supercurrent is prohibited but still exists within the entire region. This phenomenon contradicts the conventional wisdom and indicates the occurrence of spin and charge separation in present junction, which could lead to useful spintronics devices.