Mid-infrared silicon-on-insulator waveguides with single-mode propagation over an octave of frequency.

Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of "endlessly single-mode" waveguiding in silicon photonics. Silicon-on-insulator waveguides were designed, fabricated and characterised at 1.95 µm and 3.80 µm. The waveguides were shown to support low-loss propagation (1.46 ± 0.13 dB/cm loss at 1.95 µm and 1.55 ± 0.35 dB/cm at 3.80 µm) and single-mode propagation was confirmed at 1.95 µm, meaning that only the fundamental mode was present over the wavelength range 1.95 - 3.80 µm. We also present the prospects for the use of these waveguides in sensing applications.

Broadband 2 × 2 multimode interference coupler for mid-infrared wavelengths.

Beam splitters are core components of photonic integrated circuits and are often implemented with multimode interference couplers. While these devices offer high performance, their operational bandwidth is still restrictive for sensing applications in the mid-infrared wavelength range. Here we experimentally demonstrate a subwavelength-structured 2×2 multimode interference coupler with high performance in the 3.1-3.7µm range, doubling the bandwidth of a conventional device.

Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics.

Thick epitaxial BaTiO3 films ranging from 120 nm to 1 µm were grown by off-axis RF magnetron sputtering on SrTiO3-templated silicon-on-insulator (SOI) substrates for use in electro-optic applications, where such large thicknesses are necessary. The films are of high quality, rivaling those grown by molecular beam epitaxy (MBE) in crystalline quality, but can be grown 10 times faster. Extraction of lattice parameters from geometric phase analysis of atomic-resolution scanning transmission electron microscopy images revealed how the in-plane and out-of-plane lattice spacings of sputtered BaTiO3 changes as a function of layer position within a thick film. Our results indicate that compared to molecular beam epitaxy, sputtered films retain their out-of-plane polarization (c-axis) orientation for larger thicknesses. We also find an unusual re-transition from in-plane polarization (a-axis) to out-of-plane polarization (c-axis), along with an anomalous lattice expansion, near the surface. We also studied a method of achieving 100% a-axis-oriented films using a two-step process involving amorphous growth and recrystallization of a seed layer followed by normal high temperature growth. While this method is successful in achieving full a-axis orientation even at low thicknesses, the resulting film has a large number of voids and misoriented grains. Electro-optic measurement using a transmission setup of a sputtered BTO film grown using the optimized conditions yields an effective Pockels coefficient as high as 183 pm/V. A Mach-Zehnder modulator fabricated on such films exhibits phase shifting with an equivalent Pockels coefficient of 157 pm/V. These results demonstrate that sputtered BTO thick films can be used for integrated electro-optic modulators for Si photonics.

Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory.

Emerging applications such as the Internet-of-Things and more-electric aircraft require electronics with integrated data storage that can operate in extreme temperatures with high energy efficiency. As transistor leakage current increases with temperature, nanoelectromechanical relays have emerged as a promising alternative. However, a reliable and scalable non-volatile relay that retains its state when powered off has not been demonstrated. Part of the challenge is electromechanical pull-in instability, causing the beam to snap in after traversing a section of the airgap. Here we demonstrate an electrostatically actuated nanoelectromechanical relay that eliminates electromechanical pull-in instability without restricting the dynamic range of motion. It has several advantages over conventional electrostatic relays, including low actuation voltages without extreme reduction in critical dimensions and near constant actuation airgap while the device moves, for improved electrostatic control. With this nanoelectromechanical relay we demonstrate the first high-temperature non-volatile relay operation, with over 40 non-volatile cycles at 200 ∘C.