ABSTRACT
Thermal management in devices directly affects their performance, but it is difficult to apply conventional cooling methods such as the use of cooling liquids or fans to micro devices owing to the small size of micro devices. In this study, we attempted to solve this problem by employing a heat sink fabricated using copper with porous structures consisting of single-layer graphene on the surface and graphene oxide inside the pores. The porous copper/single-layer graphene/graphene oxide composite (p-Cu/G/rGO) had a porosity of approximately 35%, and the measured pore size was approximately 10 to 100 µm. The internal GO was reduced at a temperature of 1000 °C. On observing the heat distribution in the structure using a thermal imaging camera, we could observe that the p-Cu/G/rGO was conducting heat faster than the p-Cu, which was consistent with the simulation. Furthermore, the thermal resistance of p-Cu/G/rGO was lower than those of the p-Cu and pure Cu. When the p-Cu/G/rGO was fabricated into a heat sink to mount the light emitting diode (LED) chip, the measured temperature of the LED was 31.04 °C, which was less than the temperature of the pure Cu of 40.8 °C. After a week of being subjected to high power (1000 mA), the light intensity of p-Cu/G/rGO decreased to 95.24%. However, the pure Cu decreased significantly to 66.04%. The results of this study are expected to be applied to micro devices for their effective thermal management.
ABSTRACT
A g-C3N4/CuO nanostructure featuring improved photoelectrochemical properties was successfully prepared using a facile and cost-effective method involving electrodeposition and thermal oxidation. The improved photoelectrochemical properties were mainly ascribed to the increased surface area and improved charge transportation of the g-C3N4/CuO photocathode. This photocathode can be used in novel strategies for resolving problems associated with low-efficiency CuO photocathodes.
ABSTRACT
GaN-based microscale light-emitting diodes (µLEDs) are reported for assembly into deformable displays and repair systems. A stamp-imprinting method that enables large area assembly without spatial limitation is involved in the system, and a selective pick-up method is presented that includes a method for removing detected defective chips through micro-pulsed laser scanning. The photosensitive functional material, which is an accepted layer for the stable imprinting of chips, is determined by controlling the adhesion. In addition, selective pick-up and adhesion-controlled functional materials allow the implementation of defect-free displays through two pick-and-place cycles. Displays and related systems fabricated with this method can offer interesting optical and electrical properties.
ABSTRACT
Recent development in mobile electronic devices and electric vehicles requires electrical wires with reduced weight as well as enhanced stability. In addition, since electric energy is mostly generated from power plants located far from its consuming places, mechanically stronger and higher electric power transmission cables are strongly demanded. However, there has been no alternative materials that can practically replace copper materials. Here, we report a method to prepare ultrastrong graphene fibers (GFs)-Cu core-shell wires with significantly enhanced electrical and mechanical properties. The core GFs are synthesized by chemical vapor deposition, followed by electroplating of Cu shells, where the large surface area of GFs in contact with Cu maximizes the mechanical toughness of the core-shell wires. At the same time, the unique electrical and thermal characteristics of graphene allow a â¼10 times higher current density limit, providing more efficient and reliable delivery of electrical energies through the GFs-Cu wires. We believe that our results would be useful to overcome the current limit in electrical wires and cables for lightweight, energy-saving, and high-power applications.
ABSTRACT
The heat generated from electronic devices such as light emitting diodes (LEDs), batteries, and highly integrated transistors is one of the major causes obstructing the improvement of their performance and reliability. Herein, we report a comprehensive method to dissipate the generated heat to a vast area by using the new type of graphene-carbon-metal composite film as a heat sink. The unique porous graphene-carbon-metal composite film that consists of an electrospun carbon nanofiber with arc-graphene (Arc-G) fillers and an electrochemically deposited copper (Cu) layer showed not only high electrical and thermal conductivity but also high mechanical stability. Accordingly, superior thermal management of LED devices to that of conventional Cu plates and excellent resistance stability during the repeated 10â¯000 bending cycles has been achieved. The heat dissipation of LEDs has been enhanced by the high heat conduction in the composite film, heat convection in the air flow, and thermal radiation at low temperature in the porous carbon structure. This result reveals that the graphene-carbon-metal composite film is one of the most promising materials for a heat sink of electronic devices in modern electronics.
ABSTRACT
Recently, research on micro-electronic and optoelectronic devices has been rapidly increasing. Parts and products related to these devices are becoming smaller and more integrated within circuits. As a result, the heat generated in devices has increased greatly. When excess heat is generated, important properties are affected such as efficiency and lifetime and, in severe cases, this can result in the failure of devices. Therefore, efficient cooling is required and it becomes necessary to study the heat dissipation properties of device materials. Research on heat-dissipating materials with high thermal conductivities and large surface areas, and which can transfer heat rapidly to facilitate progressive heat-release, is being actively pursued. In this study, a porous copper with reduced graphene oxide (pCu-rGO) heterostructure was fabricated by thermal annealing using Cu powder and GO. The thermal properties were then investigated and the results indicated that the pCu-rGO heterostructure exhibits a higher thermal conductivity than porous Cu. In addition, the thermal resistance of the sample was measured by applying it as a heat sink of a light emitting diode (LED). The result was 18.33% lower than that of bulk Cu. Also, when an overcurrent of 750 mA was applied for 144 hours, the luminance of bulk Cu decreased from 100% to 86.07%. On the other hand, the pCu-rGO showed that the luminance was maintained at 95.64%. Therefore, it is expected to resolve the existing problem of heat generation in electronic and optical devices.
ABSTRACT
Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil. We also demonstrated that the electroformed free-standing Cu thin films could be utilized for patterning microstructures and incorporated onto a flexible substrate for LEDs. This innovative process could be beneficial for the advancement of flexible electronics and optoelectronics, which require a wide range of mechanical and physical properties.
ABSTRACT
Porous materials have historically been of interest for a wide range of applications in thermal management, for example, in heat exchangers and thermal barriers. Rapid progress in electronic and optoelectronic technology necessitates more efficient spreading and dissipation of the heat generated in these devices, calling for the development of new thermal management materials. Here, we report an effective technique for the synthesis of porous Cu-graphene heterostructures with pores of about 30 µm and a porosity of 35%. Graphene layers were grown on the surfaces of porous Cu, which was formed via the coalescence of molten Cu microparticles. The surface passivation with graphene layers resulted in a thermal conductivity higher than that of porous Cu, especially at high temperatures (approximately 40% at 1173 K). The improved heat dissipation properties of the porous structures were demonstrated by analysis of the thermal resistance and temperature distribution of LED chips mounted on the structures. The effective combination of the structural and material properties of porous Cu-graphene heterostructures provides a new material for effective thermal management of high-power electronic and optoelectronic devices.