Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions.

We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H2-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 °C induces a phase transformation of the catalyst cores to Cu7In3; while a hydrogen plasma treatment at 420 °C without silane can lead to the formation of the Cu11In9 phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid-solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs-below 10 nm-among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap.

Single-Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell.

This work reports for the first time a highly efficient single-crystal cesium tin triiodide (CsSnI3 ) perovskite nanowire solar cell. With a perfect lattice structure, low carrier trap density (≈5 × 1010 cm-3 ), long carrier lifetime (46.7 ns), and excellent carrier mobility (>600 cm2 V-1 s-1 ), single-crystal CsSnI3 perovskite nanowires enable a very attractive feature for flexible perovskite photovoltaics to power active micro-scale electronic devices. Using CsSnI3 single-crystal nanowire in conjunction with highly conductive wide bandgap semiconductors as front-surface-field layers, an unprecedented efficiency of 11.7% under AM 1.5G illumination is achieved. This work demonstrates the feasibility of all-inorganic tin-based perovskite solar cells via crystallinity and device-structure improvement for the high-performance, and thus paves the way for the energy supply to flexible wearable devices in the future.

Performance of global retention models in the optimisation of the chromatographic separation (I): Simple multi-analyte samples.

Conventional retention models lead to accurate descriptions of the elution behaviour from the fitting of data for single solutes or from a set of solutes, one by one. However, the simultaneous fitting of several solutes through a regression process that separates the contributions of column and solvent from those of each solute is also possible. The result is a global retention model constituted by a set of equations with some common parameters (those associated with column and solvent), whereas others, specific to each solute, differ for each equation. This work explores the possibilities, advantages, and limitations of global models when they are applied to the optimisation of chromatographic resolution. A set constituted by 13 drugs (diuretics and ß-blockers) and a training experimental design of seven multi-linear gradients are considered. Since standards for all compounds were available, the optimisation based on global models could be compared with the conventional optimisation, which is based on individual models. In their current state, global models do not predict changes in elution order, but they do allow for incorporating additional solutes (e.g., new analytes or matrix peaks) with only one new experiment. This possibility is explored by extending the model for the 13 analytes to include 26 peaks associated with a contamination in the injector. The combination of individual and global models allows an optimisation where the effects of matrix peaks on the separation of analytes can be integrated.

Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM.

We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal effects. Two types of heating holders were used: a carbon membrane, and a silicon nitride membrane. Different evolution of Si nanowires on these membranes was observed. Regarding the heating of Si nanowires on a C membrane at 800 °C and above, a serious degradation dependent on the diameter of the Si nanowire was observed under the electron beam, with the formation of Si carbide. When the membrane was changed to Si nitride, a reversible sectioning and welding of the Si nanowire was observed.

Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using In and Sn catalysts.

In and Sn are the type of catalysts which do not introduce deep level electrical defects within the bandgap of germanium (Ge). However, Ge nanowires produced using these catalysts usually have a large diameter, a tapered morphology, and mixed crystalline and amorphous phases. In this study, we show that plasma-assisted vapor-liquid-solid (PA-VLS) method can be used to synthesize Ge nanowires. Moreover, at certain parameter domains, the sidewall deposition issues of this synthesis method can be avoided and long, thin tapering-free monocrystalline Ge nanowires can be obtained with In and Sn catalysts. We find two quite different parameter domains where Ge nanowire growth can occur via PA-VLS using In and Sn catalysts: (i) a low temperature-low pressure domain, below âˆ¼235 °C at a GeH4partial pressure of âˆ¼6 mTorr, where supersaturation in the catalyst occurs thanks to the low solubility of Ge in the catalysts, and (ii) a high temperature-high pressure domain, at ∼400 °C and a GeH4partial pressure above âˆ¼20 mTorr, where supersaturation occurs thanks to the high GeH4concentration. While growth at 235 °C results in tapered short wires, operating at 400 °C enables cylindrical nanowire growth. With the increase of growth temperature, the crystalline structure of the nanowires changes from multi-crystalline to mono-crystalline and their growth rate increases from ∼0.3 nm s-1to 5 nm s-1. The cylindrical Ge nanowires grown at 400°C usually have a length of few microns and a radius of around 10 nm, which is well below the Bohr exciton radius in bulk Ge (24.3 nm). To explain the growth mechanism, a detailed growth model based on the key chemical reactions is provided.

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions.

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (XC), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H2/SiF4 ratio affects the XC of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest XC are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction.

High Density of Quantum-Sized Silicon Nanowires with Different Polytypes Grown with Bimetallic Catalysts.

When Si nanowires (NWs) have diameters below about 10 nm, their band gap increases as their diameter decreases; moreover, it can be direct if the material adopts the metastable diamond hexagonal structure. To prepare such wires, we have developed an original variant of the vapor-liquid-solid process based on the use of a bimetallic Cu-Sn catalyst in a plasma-enhanced chemical vapor deposition reactor, which allows us to prevent droplets from coalescing and favors the growth of a high density of NWs with a narrow diameter distribution. Controlling the deposited thickness of the catalyst materials at the sub-nanometer level allows us to get dense arrays (up to 6 × 1010 cm-2) of very-small-diameter NWs of 6 nm on average (standard deviation of 1.6 nm) with crystalline cores of about 4 nm. The transmission electron microscopy analysis shows that both 3C and 2H polytypes are present, with the 2H hexagonal diamond structure appearing in 5-13% of the analyzed NWs per sample.

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation.

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2nanoparticles.

Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full process consists of three steps: (1) SnO2nanoparticle (NP) reduction in a hydrogen plasma to produce Sn catalyst; (2) a-Ge:H deposition at 120 °C and (3) annealing. GeSn alloys with rich morphologies such as discrete nanocrystals (NCs), random, and straight NWs were successfully synthesized by changing process conditions. We show that annealing under Ar plasma favors the elaboration of straight GeSn NWs in contrast to the conventional random GeSn NWs obtained when annealing is performed under a H2atmosphere. Interestingly, GeSn in the form of discrete NCs can be fabricated during the deposition of a-Ge:H at 180 °C. Even more, the synthesis of out-of-plane GeSn NWs has been demonstrated by reversing the deposition sequence of SnO2NPs and a-Ge:H layer.

Plan de contingencia para los servicios de medicina intensiva frente a la pandemia COVID-19 / Contingency plan for the intensive care services for the COVID-19 pandemic

En enero de 2020 China identificó un nuevo virus de la familia de los Coronaviridae como causante de varios casos de neumonía de origen desconocido. Inicialmente confinado a la ciudad de Wuhan, se extendió posteriormente fuera de las fronteras chinas. En España, el primer caso se declaró el 31 de enero de 2020. El 11 de marzo, la Organización Mundial de la Salud declaró el brote de coronavirus como pandemia. El 16 de marzo había 139 países afectados. Ante esta situación, las Sociedades Científicas SEMICYUC y SEEIUC han decidido la elaboración de este plan de contingencia para dar respuesta a las necesidades que conllevará esta nueva enfermedad. Se pretende estimar la magnitud del problema e identificar las necesidades asistenciales, de recursos humanos y materiales, de manera que los servicios de medicina intensiva del país tengan una herramienta que les permita una planificación óptima y realista con que responder a la pandemia

In January 2020, the Chinese authorities identified a new virus of the Coronaviridae family as the cause of several cases of pneumonia of unknown aetiology. The outbreak was initially confined to Wuhan City, but then spread outside Chinese borders. On 31 January 2020, the first case was declared in Spain. On 11 March 2020, The World Health Organization (WHO) declared the coronavirus outbreak a pandemic. On 16 March 2020, there were 139 countries affected. In this situation, the Scientific Societies SEMICYUC and SEEIUC, have decided to draw up this Contingency Plan to guide the response of the Intensive Care Services. The objectives of this plan are to estimate the magnitude of the problem and identify the necessary human and material resources. This is to provide the Spanish Intensive Medicine Services with a tool to programme optimal response strategies

[New mutation in the CASK gene in a child with microcephaly syndrome and pontocerebellar hypoplasia]. / Nueva mutación en el gen CASK en un niño con síndrome de microcefalia e hipoplasia pontocerebelosa.

TITLE: Nueva mutación en el gen CASK en un niño con síndrome de microcefalia e hipoplasia pontocerebelosa.

What factors determine attitudes towards the implementation of a packaging deposit and refund system? A qualitative study of the perception of Spanish consumers.

There is a growth of social concern regarding the deterioration of the environment. This has boosted the promotion of more efficient and sustainable mechanisms to deal with waste management. In Spain, waste management authorities and related organisations have engaged in a debate about the desirability to implement a packaging Deposit and Refund System (DRS). Under a DRS, consumers have to pay a "packaging deposit" as an added price to products purchased. This deposit is refunded when consumers return the used packaging to the point of sale in perfect conditions for identification. The implementation of such a system implies an important expense of resources. Its effectiveness in increasing the recycling rates crucially depends on public involvement and participation. This paper is grounded in previous studies on attitudes towards recycling. It presents the results of qualitative research performed to capture those factors that are determinant of the expected behaviour of citizens under the proposed DRS. The results indicate that the public perception of the DRS is very sensitive to the information provided. The description of some of the distinctive features of the new system, such as the mechanism associated with the economic deposit or the procedure to return packages, ultimately result in a rather negative evaluation and a reduced predisposition to participate in the waste collection. This study contributes to the analysis of what factors determine the adoption of the DRS, which is key to its success. It indicates that, beyond first impressions, the provision of information describing its features hinders the public's perception and has the potential to modify waste recycling behaviour.

Contingency Plan for the Intensive Care Services for the COVID-19 pandemic. / Plan de contingencia para los servicios de medicina intensiva frente a la pandemia COVID-19.

In January 2020, the Chinese authorities identified a new virus of the Coronaviridae family as the cause of several cases of pneumonia of unknown aetiology. The outbreak was initially confined to Wuhan City, but then spread outside Chinese borders. On 31 January 2020, the first case was declared in Spain. On 11 March 2020, The World Health Organization (WHO) declared the coronavirus outbreak a pandemic. On 16 March 2020, there were 139 countries affected. In this situation, the Scientific Societies SEMICYUC and SEEIUC, have decided to draw up this Contingency Plan to guide the response of the Intensive Care Services. The objectives of this plan are to estimate the magnitude of the problem and identify the necessary human and material resources. This is to provide the Spanish Intensive Medicine Services with a tool to programme optimal response strategies.

[Contingency plan for the intensive care services for the COVID-19 pandemic]. / Plan de contingencia para los servicios de medicina intensiva frente a la pandemia COVID-19.

In January 2020, the Chinese authorities identified a new virus of the Coronaviridae family as the cause of several cases of pneumonia of unknown aetiology. The outbreak was initially confined to Wuhan City, but then spread outside Chinese borders. On 31 January 2020, the first case was declared in Spain. On 11 March 2020, The World Health Organization (WHO) declared the coronavirus outbreak a pandemic. On 16 March 2020, there were 139 countries affected. In this situation, the Scientific Societies SEMICYUC and SEEIUC have decided to draw up this Contingency Plan to guide the response of the Intensive Care Services. The objectives of this plan are to estimate the magnitude of the problem and identify the necessary human and material resources. This is to provide the Spanish Intensive Medicine Services with a tool to programme optimal response strategies.

A comparative study between real-time PCR and loop-mediated isothermal amplification to detect carbapenemase and/or ESBL genes in Enterobacteriaceae directly from bronchoalveolar lavage fluid samples.

OBJECTIVES: To evaluate and compare the efficacy of real-time PCR (Xpert Carba-R) and loop-mediated isothermal amplification (Eazyplex® SuperBug CRE) for detecting carbapenemase carriage in Enterobacteriaceae directly from bronchoalveolar lavage (BAL). METHODS: Negative BAL samples were spiked with 21 well-characterized carbapenemase-producing Enterobacteriaceae strains to a final concentration of 102-104 cfu/mL. Xpert Carba-R (Cepheid, Sunnyvale, CA, USA), which detects five targets (blaKPC, blaNDM, blaVIM, blaOXA-48 and blaIMP-1), and the Eazyplex® SuperBug CRE system (Amplex-Diagnostics GmbH, Germany), which detects seven genes (blaKPC, blaNDM, blaVIM, blaOXA-48, blaOXA-181, blaCTXM-1 and blaCTXM-9), were evaluated for the detection of these genes directly from BAL samples. RESULTS: Xpert Carba-R showed 100% agreement with carbapenemase characterization by PCR and sequencing for all final bacteria concentrations. Eazyplex® SuperBug CRE showed 100%, 80% and 27% agreement with PCR and sequencing when testing 104, 103 and 102 cfu/mL, respectively. False negative results for Eazyplex® SuperBug CRE matched the highest cycle threshold values for Xpert Carba-R. Hands-on time for both assays was about 15 min, but Eazyplex® SuperBug CRE results were available within 30 min, whereas Xpert Carba-R took around 50 min. CONCLUSIONS: We here describe the successful use of two commercial diagnostic tests, Xpert Carba-R and Eazyplex® SuperBug CRE, to detect bacterial carbapenem resistance genes directly in lower respiratory tract samples. Our results could be used as proof-of-concept data for validation of these tests for this indication.

Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes.

Germanium quantum dots (GeQDs), addressed by self-aligned and epitaxial silicon nanowires (SiNWs) as electrodes, represent the most fundamental and the smallest units that can be integrated into Si optoelectronics for 1550 nm wavelength detection. In this work, individual GeQD photodetectors have been fabricated based on a low temperature self-condensation of uniform amorphous Si (a-Si)/a-Ge bilayers at 300 °C, led by rolling indium (In) droplets. Remarkably, the diameter of the GeQD nodes can be independently controlled to achieve wider GeQDs for maximizing infrared absorption with narrower SiNW electrodes to ensure a high quality Ge/Si hetero-epitaxial connection. Importantly, these hetero GeQD/SiNW photodetectors can be deployed into predesigned locations for scalable device fabrication. The photodetectors demonstrate a responsivity of 1.5 mA W-1 and a photoconductive gain exceeding 102 to the communication wavelength signals, which are related to the beneficial type-II Ge/Si alignment, gradient Ge/Si epitaxial transition and a larger QD/NW diameter ratio. These results indicate a new approach to batch-fabricate and integrate GeQDs for ultra-compact Si-compatible photodetection and imaging applications.

Plan de contingencia para los servicios de medicina intensiva frente a la pandemia COVID-19 / Contingency Plan for the Intensive Care Services for the COVID-19 pandemic

En enero de 2020 China identificó un nuevo virus de la familia de los Coronaviridae como causante de varios casos de neumonía de origen desconocido. Inicialmente confinado a la ciudad de Wuhan, se extendió posteriormente fuera de las fronteras chinas. En España, el primer caso se declaró el 31 de enero de 2020. El 11 de marzo, la Organización Mundial de la Salud declaró el brote de coronavirus como pandemia. El 16 de marzo había 139 países afectados. Ante esta situación, las Sociedades Científicas SEMICYUC y SEEIUC han decidido la elaboración de este plan de contingencia para dar respuesta a las necesidades que conllevará esta nueva enfermedad. Se pretende estimar la magnitud del problema e identificar las necesidades asistenciales, de recursos humanos y materiales, de manera que los servicios de medicina intensiva del país tengan una herramienta que les permita una planificación óptima y realista con que responder a la pandemia

In January 2020, the Chinese authorities identified a new virus of the Coronaviridae family as the cause of several cases of pneumonia of unknown aetiology. The outbreak was initially confined to Wuhan City, but then spread outside Chinese borders. On 31 January 2020, the first case was declared in Spain. On 11 March 2020, The World Health Organization (WHO) declared the coronavirus outbreak a pandemic. On 16 March 2020, there were 139 countries affected. In this situation, the Scientific Societies SEMICYUC and SEEIUC, have decided to draw up this Contingency Plan to guide the response of the Intensive Care Services. The objectives of this plan are to estimate the magnitude of the problem and identify the necessary human and material resources. This is to provide the Spanish Intensive Medicine Services with a tool to programme optimal response strategies

Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD.

We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.

Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires.

Three-dimensional (3D) construction of radial junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells on standing silicon nanowires (SiNWs) is a promising strategy to maximize the light harvesting performance and improve the photocarrier collection in an optimized junction configuration. The unique light in-coupling and absorption behaviour in the antenna-like 3D photonic structures also necessitates a set of new theoretical models and simulation tools to design, predict and optimize the photovoltaic performance of radial junction solar cells, which can be rather different from planar junction solar cells. Recently, the performance of radial junction a-Si:H thin film solar cells has progressed steadily to a level comparable or even superior to that of their planar counterparts, with plenty of room for further improvement. This review will first address the growth strategy and critical parameter control of SiNWs produced via a plasma-assisted low-temperature vapour-liquid-solid procedure using low-melting-point metals as the catalyst. Then, the construction of high-performance radial junction thin film solar cells over the standing SiNW matrix, as well as their optimal structural designs, will be introduced. At the end, the new applications of 3D radial junction units will be summarized, which include, for example, the construction of very flexible, low-cost and efficient a-Si:H solar cells with the highest power-to-weight ratio, the demonstration of highly sensitive solar-blind photodetectors operating at the ultraviolet wavelength spectrum and the development of novel biomimetic radial tandem junction photodetectors with an intrinsic red-green-blue (RGB) colour distinguishing capability.

Rational design of nanowire solar cells: from single nanowire to nanowire arrays.

In this review, we report several rational designs of nanowire-based solar cells from single nanowire to nanowire arrays. Two methods of nanowires fabrication: via 'top-down' and 'bottom-up', and two types of configurations including axial and radial junction are presented for nanowire-based solar cells. To enhance absorption, several photon management schemes are shown in detail, including anti-reflection coating, diffractive grating, and plasmonics. Considering the rational design of nanowire arrays, we summarize a total of seven solar cell structures including axial junctions, radial junctions, substrate interfacial junctions, planar junctions, conductors, junctionless and tandem. Each type is supported by examples which are presented and discussed. Finally, a general comparison between bulk and nanowire solar cell efficiencies is given.