Light-driven dynamical tuning of the thermal conductivity in ferroelectrics.

Dynamical tuning of the thermal conductivity in crystals, κ, is critical for thermal management applications, as well as for energy harvesting and the development of novel phononic devices able to perform logic operations with phonons. Such a desired κ control can be achieved in functional materials that experience large structural and phonon variations as a result of field-induced phase transformations. However, this approach is only practical within reduced temperature intervals containing zero-bias phase transition points, since otherwise the necessary driving fields become excessively large and the materials' performances are detrimentally affected. Here, based on first-principles calculations, we propose an alternative strategy for dynamically tuning κ that is operative over broad temperature conditions and realizable in a wide class of materials. By shining light on the archetypal perovskite oxide KNbO3, we predict that ultrafast and reversible ferroelectric-to-paraelectric phase transitions are induced, yielding large and anisotropic κ variations (up to ≈30% at T = 300 K). These light-induced thermal transport shifts can take place at temperatures spanning several hundreds of kelvin and are essentially the result of anharmonic effects affecting the phonon lifetimes.

How Concerted Are Ionic Hops in Inorganic Solid-State Electrolytes?

Despite being fundamental to the understanding of solid-state electrolytes (SSEs), little is known on the degree of coordination between mobile ions in diffusive events, thus hindering a detailed comprehension and possible rational design of SSEs. Here, we introduce an unsupervised k-means clustering approach that is able to identify ion-hopping events and correlations between many mobile ions and apply it to a comprehensive ab initio MD database comprising several families of inorganic SSEs and millions of ionic configurations. It is found that despite two-body interactions between mobile ions being the largest, higher-order n-ion (2 < n) correlations are most frequent. Specifically, we prove a general exponential decaying law for the probability density function governing the number of concerted mobile ions. For the particular case of Li-based SSEs, it is shown that the average number of correlated mobile ions amounts to 10 ± 5 and that this result is practically independent of the temperature. Interestingly, our data-driven analysis reveals that fast-ionic diffusion strongly and positively correlates with ample hopping lengths and long hopping spans but not with high hopping frequencies and short interstitial residence times. Finally, it is shown that neglection of many-ion correlations generally leads to a modest overestimation of the hopping frequency that roughly is proportional to the average number of correlated mobile ions.

GaAs/GaP Superlattice Nanowires for Tailoring Phononic Properties at the Nanoscale: Implications for Thermal Engineering.

The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in one or more dimensions, are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine materials that cannot be put together in conventional heterostructures due to the lattice mismatch. In this work, we investigate GaAs/GaP superlattices embedded in GaP nanowires and demonstrate the tunability of their phononic and optoelectronic properties by inelastic light scattering experiments corroborated by ab initio calculations. We observe clear modifications in the dispersion relation for both acoustic and optical phonons in the superlattices nanowires. We find that by controlling the superlattice periodicity, we can achieve tunability of the phonon frequencies. We also performed wavelength-dependent Raman microscopy on GaAs/GaP superlattice nanowires, and our results indicate a reduction in the electronic bandgap in the superlattice compared to the bulk counterpart. All of our experimental results are rationalized with the help of ab initio density functional perturbation theory (DFPT) calculations. This work sheds fresh insights into how material engineering at the nanoscale can tailor phonon dispersion and open pathways for thermal engineering.

Effects of vacancies on the thermal conductivity of Si nanowires.

Point defects can be used to tailor the properties of semiconductors, but can also have undesired effects on electronic and thermal transport, particularly in ultrascaled nanostructures, such as nanowires. Here we use all-atom molecular dynamics to study the effect that different concentrations and spatial distributions of vacancies have on the thermal conductivity of Si nanowires, overcoming the limitations of previous studies. Although vacancies are not as effective as the nanovoids found in e.g. porous Si, they can still reduce the thermal conductivity in ultrathin Si nanowires by more than a factor of two, when found in concentrations smaller than 1%. We also present arguments against the so-called self-purification mechanism, which is sometimes suggested to take place and proposes that vacancies have no influence on transport phenomena in nanowires.

Colossal room-temperature electrocaloric strength aided by hydrostatic pressure in lead-free multiferroic solid solutions.

Solid-state cooling applications based on electrocaloric (EC) effects are particularly promising from a technological point of view due to their downsize scalability and natural implementation in circuitry. However, EC effects typically involve materials that contain toxic substances and require relatively large electric fields (∼100-1000 kV cm-1) that cause fateful leakage current and dielectric loss problems. Here, we propose a possible solution to these practical issues that consists of concertedly applying hydrostatic pressure and electric fields on lead-free multiferroic materials. We theoretically demonstrate this strategy by performing first-principles simulations on supertetragonal BiFe1-xCoxO3 solid solutions (BFCO). It is shown that hydrostatic pressure, besides adjusting the occurrence of EC effects to near room temperature, can reduce enormously the intensity of driving electric fields. For pressurized BFCO, we estimate a colossal room-temperature EC strength, defined as the ratio of the adiabatic EC temperature change by an applied electric field, of ∼1 K cm kV-1, a value that is several orders of magnitude larger than those routinely measured in uncompressed ferroelectrics.

Chirality Effects and Semiconductor versus Metallic Nature in Halide Nanotubes.

A density functional theory study of the electronic structure of nanostructures based on the hexagonal layers of LuI3 is reported. Both bulk and slabs with one to three layers exhibit large and indirect bandgaps. Different families of nanotubes can be generated from these layers. Semiconducting nanotubes of two different chiralities have been studied. The direct or indirect nature of the optical gaps depends on the chirality, and a simple rationalization of this observation based on band folding arguments is provided. Remarkably, a metastable form of the armchair LuI3 nanotubes can be obtained under a structural rearrangement such that some iodine atoms are segregated toward the center of the nanotube forming chains of dimerized iodines. These nanotubes having an Lu2N I5N backbone are predicted to be metallic and should be immune toward a Peierls distortion. The iodine chains in the inner part of the nanotubes are weakly bound to the backbone so that it should be possible to remove these chains to generate a new series of neutral Lu2N I5N nanotubes which could exhibit interesting magnetic behavior. Because the LuI3 structure occurs for a large number of lanthanide and actinide trihalides, a tuning of the optical, transport, and probably magnetic properties of these new families of nanotubes can be a challenging prospect for future experimental studies.

Universal ion-transport descriptors and classes of inorganic solid-state electrolytes.

Solid-state electrolytes (SSEs) with high ion conductivity are pivotal for the development and large-scale adoption of green-energy conversion and storage technologies such as fuel cells, electrocatalysts and solid-state batteries. Yet, SSEs are extremely complex materials for which general rational design principles remain indeterminate. Here, we combine first-principles materials modelling, computational power and modern data analysis techniques to advance towards the solution of such a fundamental and technologically pressing problem. Our data-driven survey reveals that the correlations between ion diffusivity and other materials descriptors in general are monotonic, although not necessarily linear, and largest when the latter are of vibrational nature and explicitly incorporate anharmonic effects. Surprisingly, principal component and k-means clustering analyses show that elastic and vibrational descriptors, rather than the usual ones related to chemical composition and ion mobility, are best suited for reducing the high complexity of SSEs and classifying them into universal classes. Our findings highlight the need for considering databases that incorporate temperature effects to improve our understanding of SSEs and point towards a generalized approach to the design of energy materials.

Phonon Transport in GaAs and InAs Twinning Superlattices.

Crystal phase engineering gives access to new types of periodic nanostructures, such as the so-called twinning superlattices, where the motif of the superlattice is determined by a periodic rotation of the crystal. Here, by means of atomistic nonequilibrium molecular dynamics calculations, we study to what extent these periodic systems can be used to alter phonon transport in a controlled way, similar to what has been predicted and observed in conventional superlattices based on heterointerfaces. We focus on twinning superlattices in GaAs and InAs and highlight the existence of two different transport regimes: in one, each interface behaves like an independent scatterer; in the other, a segment with a sufficiently large number of closely spaced interfaces is seen by propagating phonons as a metamaterial with its own thermal properties. In this second scenario, we distinguish the case where the phonon mean free path is smaller or larger than the superlattice segment, pointing out a different dependence of the thermal resistance with the number of interfaces.

Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface.

Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.

Observation of second sound in a rapidly varying temperature field in Ge.

Second sound is known as the thermal transport regime where heat is carried by temperature waves. Its experimental observation was previously restricted to a small number of materials, usually in rather narrow temperature windows. We show that it is possible to overcome these limitations by driving the system with a rapidly varying temperature field. High-frequency second sound is demonstrated in bulk natural Ge between 7 K and room temperature by studying the phase lag of the thermal response under a harmonic high-frequency external thermal excitation and addressing the relaxation time and the propagation velocity of the heat waves. These results provide a route to investigate the potential of wave-like heat transport in almost any material, opening opportunities to control heat through its oscillatory nature.

Highly Biaxially Strained Silicene on Au(111).

Many of graphene's remarkable properties arise from its linear dispersion of the electronic states, forming a Dirac cone at the K points of the Brillouin zone. Silicene, the 2D allotrope of silicon, is also predicted to show a similar electronic band structure, with the addition of a tunable bandgap, induced by spin-orbit coupling. Because of these outstanding electronic properties, silicene is considered as a promising building block for next-generation electronic devices. Recently, it has been shown that silicene grown on Au(111) still possesses a Dirac cone, despite the interaction with the substrate. Here, to fully characterize the structure of this 2D material, we investigate the vibrational spectrum of a monolayer silicene grown on Au(111) by polarized Raman spectroscopy. To enable a detailed ex situ investigation, we passivated the silicene on Au(111) by encapsulating it under few layers hBN or graphene flakes. The observed spectrum is characterized by vibrational modes that are strongly red-shifted with respect to the ones expected for freestanding silicene. By comparing low-energy electron diffraction (LEED) patterns and Raman results with first-principles calculations, we show that the vibrational modes indicate a highly (>7%) biaxially strained silicene phase.

Unveiling Planar Defects in Hexagonal Group IV Materials.

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy.

Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e., high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5-0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal-phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization-, and excitation wavelength-dependent µ-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.

Anisotropic Thermal Conductivity in Few-Layer and Bulk Titanium Trisulphide from First Principles.

We study the thermal conductivity of monolayer, bilayer, and bulk titanium trisulphide (TiS 3 ) by means of an iterative solution of the Boltzmann transport equation based on ab-initio force constants. Our results show that the thermal conductivity of these layers is anisotropic and highlight the importance of enforcing the fundamental symmetries in order to accurately describe the quadratic dispersion of the flexural phonon branch near the center of the Brillouin zone.

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase.

Silicon nanocrystals and nanowires have been extensively studied because of their novel properties and their applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. Here we discuss results from ab initio calculations for undoped and doped Si nanocrystals and nanowires, showing how theory can aid and improve comprehension of the structural, electronic and optical properties of these systems.

Optimisation of the thermoelectric efficiency of zirconium trisulphide monolayers through unixial and biaxial strain.

The goal of this work is to investigate the influence of mechanical deformation on the electronic and thermoelectric properties of ZrS3 monolayers. We employ density functional theory (DFT) calculations at the hybrid HSE06 level to evaluate the response of the electronic band gap and mobilities, as well as the thermopower, the electrical conductivity, the phononic and electronic contributions to the thermal conductivity, and the heat capacity. Direct examination of the electronic band structures reveals that the band gap can be increased by up to 17% under uniaxial strain, reaching a maximum value of 2.32 eV. We also detect large variations in the electrical conductivity, which is multiplied by 3.40 under a 4% compression, but much smaller changes in the Seebeck coefficient. The effects of mechanical deformation on thermal transport are even more significant, with a nearly five-fold reduction of the lattice thermal conductivity under a biaxial strain of -4%. By harnessing a combination of these effects, the thermoelectric figure of merit of strained ZrS3 could be doubled with respect to the unstrained material.

Giant Electrophononic Response in PbTiO_{3} by Strain Engineering.

We demonstrate theoretically how, by imposing epitaxial strain in a ferroelectric perovskite, it is possible to achieve a dynamical control of phonon propagation by means of external electric fields, which yields a giant electrophononic response, i.e., the dependence of the lattice thermal conductivity on external electric fields. Specifically, we study the strain-induced manipulation of the lattice structure and analyze its interplay with the electrophononic response. We show that tensile biaxial strain can drive the system to a regime where the electrical polarization can be effortlessly rotated and thus yield giant electrophononic responses that are at least one order of magnitude larger than in the unstrained system. These results derive directly from the almost divergent behavior of the electrical susceptibility at those critical strains that drive the polarization on the verge of a spontaneous rotation.

Phonon transport across crystal-phase interfaces and twin boundaries in semiconducting nanowires.

We combine state-of-the-art Green's-function methods and nonequilibrium molecular dynamics calculations to study phonon transport across the unconventional interfaces that make up crystal-phase and twinning superlattices in nanowires. We focus on two of their most paradigmatic building blocks: cubic (diamond/zinc blende) and hexagonal (lonsdaleite/wurtzite) polytypes of the same group-IV or III-V material. Specifically, we consider InP, GaP and Si, and both the twin boundaries between rotated cubic segments and the crystal-phase boundaries between different phases. We reveal the atomic-scale mechanisms that give rise to phonon scattering in these interfaces, quantify their thermal boundary resistance and illustrate the failure of common phenomenological models in predicting those features. In particular, we show that twin boundaries have a small but finite interface thermal resistance that can only be understood in terms of a fully atomistic picture.

Phonon Engineering in Twinning Superlattice Nanowires.

One of the current challenges in nanoscience is tailoring the phononic properties of a material. This has long been a rather elusive task because several phonons have wavelengths in the nanometer range. Thus, high quality nanostructuring at that length-scale, unavailable until recently, is necessary for engineering the phonon spectrum. Here we report on the continuous tuning of the phononic properties of a twinning superlattice GaP nanowire by controlling its periodicity. Our experimental results, based on Raman spectroscopy and rationalized by means of ab initio theoretical calculations, give insight into the relation between local crystal structure, overall lattice symmetry, and vibrational properties, demonstrating how material engineering at the nanoscale can be successfully employed in the rational design of the phonon spectrum of a material.

Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires.

We studied the physics of common p- and n-type dopants in hexagonal-diamond Si, a Si polymorph that can be synthesized in nanowire geometry without the need of extreme pressure conditions, by means of first-principles electronic structure calculations and compared our results with those for the well-known case of cubic-diamond nanowires. We showed that (i) as observed in recent experiments, at larger diameters (beyond the quantum confinement regime) p-type dopants prefer the hexagonal-diamond phase with respect to the cubic one as a consequence of the stronger degree of three-fold coordination of the former, while n-type dopants are at a first approximation indifferent to the polytype of the host lattice; (ii) in ultrathin nanowires, because of the lower symmetry with respect to bulk systems and the greater freedom of structural relaxation, the order is reversed and both types of dopant slightly favor substitution at cubic lattice sites; (iii) the difference in formation energies leads, particularly in thicker nanowires, to larger concentration differences in different polytypes, which can be relevant for cubic-hexagonal homojunctions; (iv) ultrasmall diameters exhibit, regardless of the crystal phase, a pronounced surface segregation tendency for p-type dopants. Overall these findings shed light on the role of crystal phase in the doping mechanism at the nanoscale and could have a great potential in view of the recent experimental works on group IV nanowires polytypes.