Charge, lattice and magnetism across the valence crossover in EuIr2Si2 single crystals.

We present a detailed study of the temperature evolution of the crystal structure, specific heat, magnetic susceptibility and resistivity of single crystals of the paradigmatic valence-fluctuating compound [Formula: see text]. A comparison to stable-valent isostructural compounds [Formula: see text] (with Eu3+), and [Formula: see text], (with Eu2+) reveals an anomalously large thermal expansion indicative of the lattice softening associated to valence fluctuations. A marked broad peak at temperatures around 65-75 K is observed in specific heat, susceptibility and the derivative of resistivity, as thermal energy becomes large enough to excite Eu into a divalent state, which localizes one f electron and increases scattering of conduction electrons. In addition, the intermediate valence at low temperatures manifests in a moderately renormalized electron mass, with enhanced values of the Sommerfeld coefficient in the specific heat and a Fermi-liquid-like dependence of resistivity at low temperatures. The high residual magnetic susceptibility is mainly ascribed to a Van Vleck contribution. Although the intermediate/fluctuating valence duality is to some extent represented in the interconfiguration fluctuation model commonly used to analyze data on valence-fluctuating systems, we show that this model cannot describe the different physical properties of [Formula: see text] with a single set of parameters.

Fully gapped superconductivity with no sign change in the prototypical heavy-fermion CeCu2Si2.

In exotic superconductors, including high-Tc copper oxides, the interactions mediating electron Cooper pairing are widely considered to have a magnetic rather than a conventional electron-phonon origin. Interest in this exotic pairing was initiated by the 1979 discovery of heavy-fermion superconductivity in CeCu2Si2, which exhibits strong antiferromagnetic fluctuations. A hallmark of unconventional pairing by anisotropic repulsive interactions is that the superconducting energy gap changes sign as a function of the electron momentum, often leading to nodes where the gap goes to zero. We report low-temperature specific heat, thermal conductivity, and magnetic penetration depth measurements in CeCu2Si2, demonstrating the absence of gap nodes at any point on the Fermi surface. Moreover, electron irradiation experiments reveal that the superconductivity survives even when the electron mean free path becomes substantially shorter than the superconducting coherence length. This indicates that superconductivity is robust against impurities, implying that there is no sign change in the gap function. These results show that, contrary to long-standing belief, heavy electrons with extremely strong Coulomb repulsions can condense into a fully gapped s-wave superconducting state, which has an on-site attractive pairing interaction.

Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions.

Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin-orbit and exchange-magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.

Multiband superconductivity with unexpected deficiency of nodal quasiparticles in CeCu2Si2.

Superconductivity in the heavy-fermion compound CeCu2Si2 is a prototypical example of Cooper pairs formed by strongly correlated electrons. For more than 30 years, it has been believed to arise from nodal d-wave pairing mediated by a magnetic glue. Here, we report a detailed study of the specific heat and magnetization at low temperatures for a high-quality single crystal. Unexpectedly, the specific-heat measurements exhibit exponential decay with a two-gap feature in its temperature dependence, along with a linear dependence as a function of magnetic field and the absence of oscillations in the field angle, reminiscent of multiband full-gap superconductivity. In addition, we find anomalous behavior at high fields, attributed to a strong Pauli paramagnetic effect. A low quasiparticle density of states at low energies with a multiband Fermi-surface topology would open a new door into electron pairing in CeCu2Si2.

Complex and strongly anisotropic magnetism in the pure spin system EuRh2Si2.

In divalent Eu systems, the 4f local moment has a pure spin state J = S = 7/2. Although the absence of orbital moment precludes crystal electric field effects, we report a sizable magnetic anisotropy in single crystals of EuRh2Si2. We observed a surprisingly complex magnetic behavior with three successive phase transitions. The Eu(2+) moments order in a probably amplitude-modulated structure below 24.5 K, undergoing a further transition to a structure that is possibly of the equal-moment type, and a first order transition at lower temperatures, presumably into a spin spiral structure. The sharp metamagnetic transition observed at low fields applied perpendicular to the hard axis is consistent with a change from a spiral to a fan structure. These magnetic structures are presumably formed by ferromagnetic planes perpendicular to the c axis, stacked antiferromagnetically along c but not of type I, at least just below the ordering temperature. Since EuRh2Si2 is isoelectronic and isostructural to EuFe2As2 at room temperature, our results are also relevant for the complex Eu-magnetism observed there, especially for the transition from an antiferromagnetic to a ferromagnetic state observed in EuFe2P2 upon substituting As by P.

From stable divalent to valence-fluctuating behaviour in Eu(Rh(1-x)Ir(x))2Si2 single crystals.

We have succeeded in growing high-quality single crystals of the valence-fluctuating system EuIr(2)Si(2), the divalent Eu system EuRh(2)Si(2) and the substitutional alloy Eu(Rh(1-x)Ir(x))(2)Si(2) across the range 0 < x < 1, which we characterized by means of x-ray diffraction, energy-dispersive x-ray spectroscopy, specific heat, magnetization and resistivity measurements. On increasing x, the divalent Eu ground state subsists up to x = 0.25 with a slight increase in Néel temperature, while for 0.3≤x < 0.7 a sharp hysteretic change in susceptibility and resistivity marks the first-order valence transition. For x≳0.7 the broad feature observed in the physical properties is characteristic of the continuous valence evolution beyond the critical end point of the valence transition line, and the resistivity is reminiscent of Kondo-like behaviour while the Sommerfeld coefficient indicates a mass renormalization of at least a factor of 8. The resulting phase diagram is similar to those reported for polycrystalline Eu(Pd(1-x)Au(x))(2)Si(2) and EuNi(2)(Si(1-x)Ge(x))(2), confirming its generic character for Eu systems, and markedly different to those of homologue Ce and Yb systems, which present a continuous suppression of the antiferromagnetism accompanied by a very smooth evolution of the valence. We discuss these differences and suggest them to be related to the large polarization energy of the Eu half-filled 4f shell. We further argue that the changes in the rare earth valence between RRh(2)Si(2) and RIr(2)Si(2) (R = Ce, Eu, Yb) are governed by a purely electronic effect and not by a volume effect.