Adjusting microwave sensing frequency through aspect ratio variation and bending repetitions in Permalloy ellipses.

The Ferromagnetic Resonance (FMR) phenomenon, marked by the selective absorption of microwave radiation by magnetic materials in the presence of a magnetic field, plays a pivotal role in the development of radar absorbing materials, high speed magnetic storage, and magnetic sensors. This process is integral for technologies requiring precise control over microwave absorption frequencies. We explored how variations in resonance fields can be effectively modulated by adjusting both the shape and stress anisotropies of magnetic materials on a flexible substrate. Utilizing polyethylene-naphthalate (PEN) as the substrate and Permalloy (Ni79Fe21, noted for its positive magnetostriction coefficient) as the magnetic component, we demonstrated that modifications in the aspect ratio and bending repetitions can significantly alter the resonance field. The results, consistent with Kittel's equation and the predictions of a uniaxial magnetic anisotropy model, underscore the potential for flexible substrates in enhancing the sensitivity and versatility of RF-based magnetic devices.

Tunable asymmetric spin wave excitation and propagation in a magnetic system with two rectangular blocks.

Asymmetric spin wave excitation and propagation are key properties to develop spin-based electronics, such as magnetic memory, spin information and logic devices. To date, such nonreciprocal effects cannot be manipulated in a system because of the geometrical magnetic configuration, while large values of asymmetry ratio are achieved. In this study, we suggest a new magnetic system with two blocks, in which the asymmetric intensity ratio can be changed between 0.276 and 1.43 by adjusting the excitation frequency between 7.8 GHz and 9.4 GHz. Because the two blocks have different widths, they have their own spin wave excitation frequency ranges. Indeed, the spin wave intensities in the two blocks, detected by the Brillouin light scattering spectrum, were observed to be frequency-dependent, yielding tuneable asymmetry ratio. Thus, this study provides a new path to enhance the application of spin waves in spin-based electronics.

Parametric excitation and mode control using an Oersted field in a NiFe nanowire.

Parametric pumping is a nonlinear wave phenomenon and a promising technique for electronic devices based on spin waves, so-called "magnonics". For parametric excitation, a magnetic nanowire system that has a built-in dc current line to produce an Oersted field is designed, and for spin wave detection, a micro-Brillouin light scattering (µ-BLS) system is used. A spin wave with a frequency of fsw = 5.6 GHz is observed when a pumping microwave with a frequency of fmw = 11.2 GHz is applied. The wave is found to be of the n = 1 width mode (n is the antinode number), and its mode changes to an edge-localized (or possibly n > 1) mode when the Oersted field (or current) varies. Joule heating effects are not observed in the pumping process. Thus, spin wave mode control by the built-in current would be a convenient and useful method to enhance the efficiency and compatibility in applications of spin-based electronics.

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors.

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS2 devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS2 film and a Ag electrode as an interfacial layer. The MoS2 field-effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field-effect mobility of 35 cm2 V-1 s-1 , an on/off current ratio of 4 × 108 , and a photoresponsivity of 2160 A W-1 , compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n-doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS2 and electrodes. This demonstration of contact interface engineering with CVD-grown MoS2 and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.