Grating-assisted hot-electron photodetectors for S- and C-band telecommunication.

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.

Planar hot-electron photodetection with polarity-switchable photocurrents controlled by the working wavelength.

Hot-electron photodetection is attracting increasing interests. Based on internal photoemission mechanism, hot-electron photodetectors (HE PDs) convert incident photon energy into measurable photocurrent. To obtain polarity-switchable photocurrent, one often applies electric bias to reverse the hot-electron flow. However, the employment of bias reduces the device flexibility and increasing the bias voltage degrades the detectivity of the device. Herein, we design a planar HE PD with the polarity-switchable photocurrent controlled by the working wavelength. Optical simulations show that the device exhibits two absorption peaks due to the resonances of two Tamm plasmons (TPs). Electrical calculations predict two corresponding TP-assisted responsivity peaks, but with opposite photocurrent polarities, which are determined by the hot-electron flows with opposite directions. We find that the hot-electron flows are closely related with the population differences of TP-induced hot electrons in two electrodes. We further demonstrate that the photocurrent polarity of the HE PD can be switched by altering working wavelength from one TP wavelength to the other. We believe that this approach paves a route to achieve flexible hot-electron photodetection for extensive applications.

Bias voltage-tuned hot-electron optical sensing with planar Au-MoS2-Au junction.

Harvesting photoexcited hot electrons in metals promises a number of benefits in optical sensing. In practice, hot-electron optical sensors with tunable performance in electrical sensitivity are still absent. Herein, we propose a design to realize tunable hot-electron optical sensing. The proposed device consists of a one-dimensional grating deposited on a planar Au-MoS2-Au junction that is used for efficient hot-electron harvesting. Photoelectric simulations show that when grating-assisted plasmonic resonance is excited, bias voltage between two Au layers can be used to manipulate the magnitude and polarity of responsivity at the working wavelength. Therefore, the change in responsivity that originates from the change in refractive index of analyte in which the device is immersed can also be tuned by applied voltage. It is found that when bias voltage is 1 V, the electrical sensitivity doubled compared with that when applied voltage is absent. We believe the bias voltage-tuned strategy that is applied to planar hot-electron harvesting junctions facilitates the development of optical sensing.

Five-layer planar hot-electron photodetectors at telecommunication wavelength of 1550†nm.

Cost-effective and high-responsivity photodetectors at a telecommunication wavelength of 1550 nm are highly desired in optical communication systems. Differing from conventional semiconductor-based photodetectors, several planar hot-electron photodetectors (HE PDs) that operate at 1550 nm have been reported. However, these devices were often comprised of many planar layers and exhibited relatively low responsivities. Herein, we propose a design of high-performance planar HE PDs consisting of five layers. Utilizing Fabry-Pérot (FP) resonance, the nearly perfect absorption of the proposed device can be achieved at the targeted wavelength of 1550 nm. Simulation results show that FP resonance orders are crucial for the optical absorption efficiencies, and then electrical responses. Analytical electrical calculations reveal that, benefiting from the strong absorption (>0.6) in the ultrathin Au layer with a thickness of 5 nm and the low Schottky barrier (0.5 eV) of Au-MoS2 contact, predicted responsivity of proposed HE PD at zero-order FP resonance is up to ∼10 mA/W. Our design provides a new approach to realize low-cost and efficient photodetection for optical communication technology.

Self-improvement of solar water oxidation for the continuously-irradiated hematite photoanode.

Improving bulk- or surface-properties has been found as an effective route to regulate and enhance the photoelectrochemical (PEC) performances of some metal-oxide photoelectrodes. However, both bulk and surface self-improvement resulting from the photocharging (PC) effect is rarely reported and as a result the underlying mechanism of the PC effect is not fully understood. Here, we demonstrate that the hematite photoanode integrated with Sn doping and a TiO2 underlayer shows a substantial increase in the photocurrent density (i.e., from 0.69 to 1.12 mA cm-2 at 1.23 V relative to the standard hydrogen electrode) and a cathodic shift of the onset potential after being irradiated by a one-sun simulator for 12 h. The primary reasons for these can be categorized into two fundamental factors: (1) the enhanced bulk conductivity and the resulting decrease in carrier bulk recombination from the gradually increasing ratio of Fe2+ and Fe3+; (2) the reduced carrier surface recombination from the photogenerated passivation layer. Ultimately, both the bulk and surface electrical properties of the hematite photoanode are substantially self-improved under continuous irradiation. This work deepens the understanding of the PC effect and proves that it is a promising technique for the PEC-performance enhancement of the hematite photoanode.

Photodetection by Hot Electrons or Hot Holes: A Comparable Study on Physics and Performances.

Hot-carrier photodetectors are drawing significant attention; nevertheless, current researches focus mostly on the hot-electron devices, which normally show low quantum efficiencies. In contrast, hot-hole photodetectors usually have lower barriers and can provide a wide spectral range of photodetection and an improved photoconversion efficiency. Here, we report a comparable study of the hot-electron and hot-hole photodetectors from both underlying physics and optoelectronic performance perspectives. Taking the typical Au/Si Schottky contact as an example, we find obvious differences in the energy band diagram and the sequent hot-carrier generation/transport/emission processes, leading to very distinguished photodetection performances. Compared with hot electrons, hot holes show higher density below the Fermi level, the longer mean free path arising under the lower electron-electron and electron-phonon scatterings, a lower barrier height, and a lighter effective mass in Si, all of which lead to larger number of high-energy hot holes, larger transport probability, higher emission efficiency, and higher photoresponsivity. However, the low barrier height can cause poor performances of hot-hole device in dark current density and detectivity. The study elucidates the intrinsic physical differences and compares the key performance parameters of the hot-hole and hot-electron photodetections, with the objective of providing complete information for designing hot-carrier devices.

Planar dual-cavity hot-electron photodetectors.

Hot-electron photodetectors (HE PDs) are attracting increasing interests. However, the nanostructured HE PDs are fabricated via complicated and costly techniques, while the planar counterparts can hardly achieve outstanding photon absorption and hot-electron collection simultaneously. To address the incompatibility in optical and electrical domains, herein, we propose an HE PD based on planar dual cavities (i.e., DC-HE PD) one each for photon absorption and triple Schottky junctions for carrier collection. Optoelectronic simulation demonstrates that the resonant wavelength and the absorption efficiency of the device can be manipulated conveniently by tailoring the planar thickness. Compared with the single-cavity system, the absorption efficiency of the DC-HE PD with the multi-junction configuration doubled (∼100%) and the responsivity tripled (∼2 mA W-1). The high-performance optoelectronic responses are shown to be sustained over a wide range of incident angles. The detailed physical property, namely, the coupled-cavity nature and the detailed analysis of the hot electron dynamics are presented.

Fabrication of wafer-size monolayer close-packed colloidal crystals via slope self-assembly and thermal treatment.

We developed a simple and general approach for constructing a wafer-scale monolayer, close-packed polystyrene (PS), and SiO2 sphere arrays, namely colloidal crystals, which have significant potential in various applications. The method combines slope self-assembly and thermal treatment to achieve large-area and high-quality colloidal crystal with a proper slant angle (θ) and latex concentration (volume fraction, φ). The dependence of the structures of colloidal crystals on a dispersion system was also investigated. Moreover, a theoretical analysis of the slope self-assembly method was proposed. In addition, we applied the method to assemble PS spheres on different kinds of substrates, which indicates that the method is a versatile and reliable way to fabricate monolayer colloidal crystals.