Liquid-Film Rupture for Web-like Ag Nanowires toward High-Performance Organic Schottky Barrier Transistors.

Organic vertical transistors are promising device with benefits such as high operation speed, high saturation current density, and low-voltage operation owing to their short channel length. However, a short channel length leads to a high off-current, which is undesirable because it affects the on-off ratio and power consumption. This study presents a breakthrough in the development of high-performance organic Schottky barrier transistors (OSBTs) with a low off-current by utilizing a near-ideal source electrode with a web-like Ag nanowire (AgNW) morphology. This is achieved by employing a humidity- and surface-tension-mediated liquid-film rupture technique, which facilitates the formation of well-connected AgNW networks with large pores between them. Therefore, the gate electric field is effectively transmitted to the semiconductor layer. Also, the minimized surface area of the AgNWs causes complete suppression of the off-current and induces ideal saturation of the OSBT output characteristics. p- and n-type OSBTs exhibit off-currents in the picoampere range with on/off ratios exceeding 106 and 105, respectively. Furthermore, complementary inverters are prepared using an aryl azide cross-linker for patterning, with a gain of >16. This study represents a significant milestone in the development of high-performance organic vertical transistors and verifies their applicability in organic electronic circuitry.

A regioregular donor-acceptor copolymer allowing a high gain-bandwidth product to be obtained in photomultiplication-type organic photodiodes.

Obtaining a photomultiplication-type organic photodiode with a high gain-bandwidth product is challenging. We show that a newly designed regioregular polymer enables the formation of a highly oriented face-on structure with a low trap density, leading to a high EQE and a fast response time. As a result, a gain-bandwidth product of over 4 × 105 Hz is achieved.

Aerobic Exercise Training Inhibits Neointimal Formation via Reduction of PCSK9 and LOX-1 in Atherosclerosis.

The purpose of this study was to investigate whether aerobic exercise training inhibits atherosclerosis via the reduction of proprotein convertase subtilisin/kexin type 9 (PCSK9) expression in balloon-induced common carotid arteries of a high-fat-diet rats. Male SD (Sprague Dawley) rats fed an eight-weeks high-fat diet were randomly divided into three groups; these were the sham-operated control (SC), the balloon-induced control (BIC) and the balloon-induced exercise (BIE). The aerobic exercise training groups were performed on a treadmill. The major findings were as follows: first, body weight gain was significantly decreased by aerobic exercise training compared to the BIC without change of energy intake. Second, neointimal formation was significantly inhibited by aerobic exercise training in the balloon-induced common carotid arteries of high-fat-diet rats compared to the BIC. Third, low-density lipoprotein (LDL) receptor (LDLr) expression was significantly increased by aerobic exercise training in the livers of the high-fat diet group compared to the BIC, but not the proprotein convertase subtilisin/kexin type 9 (PCSK9) expression. Fourth, aerobic exercise training significantly decreased the expression of PCSK9, the lectin-like oxidized LDL receptor-1 (LOX-1), and vascular cell adhesion molecule-1 (VCAM-1) in balloon-induced common carotid arteries of high-fat-diet rats compared to the BIC. In conclusion, our results suggest that aerobic exercise training increases LDLr in the liver and inhibits neointimal formation via the reduction of PCSK9 and LOX-1 in balloon-induced common carotid arteries of high-fat-diet-induced rats.

Surfactant-Induced Solubility Control To Realize Water-Processed High-Precision Patterning of Polymeric Semiconductors for Full Color Organic Image Sensor.

A fully water-based patterning method for polymer semiconductors was developed and utilized to realize high-precision lateral patterning of various polymers. Water-borne polymer colloids, wherein hydrophobic polymers are dispersed in water with the assistance of surfactant molecules, possess a hydrophilic surface when printed onto a substrate. When this surface is exposed to a washing molecule, the surface of the polymer film recovers its original hydrophobic nature. Such surfactant-induced solubility control (SISC) enables environmentally benign, water-processed, and high-precision patterning of various polymer semiconductors with totally different solubilities, so that fully water-processed polymer organic image sensors (OISs) can be realized. B-/G-/R-selective photodiodes with a pixel size of 100 µm × 100 µm were fabricated and patterned by this water-based SISC method, leading to not only high average specific detectivity values (over 1012 Jones) but also narrow pixel-to-pixel deviation. Thanks to the superiority of the SISC method, we demonstrate the image capturing ability of OISs without B-/G-/R-color filters, from a fully water-based fabrication process.

Polymer-based flexible NOx sensors with ppb-level detection at room temperature using breath-figure molding.

A strategically designed polymer semiconductor thin film morphology with both high responsivity to the specific gas analyte and high signal transport efficiency is reported to realize high-performance flexible NOx gas sensors. Breath-figure (BF) molding of polymer semiconductors enables a finely defined degree of nano-porosity in polymer films with high reproducibility while maintaining high charge carrier mobility characteristics of organic field effect transistors (OFETs). The optimized BF-OFET with a donor-acceptor copolymer exhibits a maximum responsivity of over 104%, sensitivity of 774% ppm-1, and limit of detection (LOD) of 110 ppb against NO at room temperature. When tested across at NO concentrations of 0.2-10 ppm, the BF-OFET gas sensor exhibits a response time of 100-300 s, which is suitable for safety purposes in practical applications. Furthermore, BF-OFETs show a high reproducibility as confirmed by statistical analysis on 64 independently fabricated devices. The selectivity of NOx analytes is tested by comparing the sensing ability of BF-OFETs with those of other reducing gases and volatile organic compounds; the BF-OFET gas sensor platform monitors specific gas analytes based on their polarity and magnitude of sensitivity. Finally, flexible BF-OFETs conjugated with plastic substrates are demonstrated and they exhibit a sensitivity of 500% ppm-1 and a LOD of 215 ppb, with a responsivity degradation of only 14.2% after 10 000 bending cycles at 1% strain.

High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer.

Here, a smart strategy for decreasing the active layer thickness of the organic photodiode down to 70 nm is demonstrated by utilizing a trap-assisted photomultiplication mechanism with the optimized chemical composition. Despite the presence of a high dark current, dramatically enhanced external quantum efficiency (EQE) via photomultiplication can allow significantly reduced active layer thickness, yielding high detectivity comparable to that of conventional Si. To achieve this, a spatially confined and electrically isolated optical sensitizer, 2,2'-((2 Z,2' Z)-((4,4,9,9-tetrahexyl-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1 H-indene-2,1-diylidene))dimalononitrile (IDIC) was introduced strategically between a hole transport active layer and a cathode. A nonfullerene acceptor, IDIC, turned out to be a much more efficient sensitizer than the conventional fullerene-based acceptors, as confirmed by the effective lowering of the Schottky barrier under illumination, as well as the highest EQE exceeding 130 000%. Due to its favorable electronic structure as well as two-dimensional molecular structure, a high detectivity over 1012 Jones was successfully demonstrated while maintaining the active layer thickness as 70 nm.

Bifunctional Etalon-Electrode To Realize High-Performance Color Filter Free Image Sensor.

Organic photodiodes (OPDs), based on organic semiconductors with high absorption coefficients for visible light, are emerging as potential candidates for replacing silicon photodiodes in image sensors, particularly due to the possibility of realizing a thin thickness and exclusion of color filters, both of which can contribute to a dramatically enhanced degree of integration for image sensors. Despite years of research, techniques have not yet been developed that allow the OPD itself to have color selectivity while maintaining a thin (<1 µm) OPD thickness, in combination with a sufficiently high detectivity (>1012 cm·Hz0.5/W). To solve this issue, we introduce a concept of "etalon-electrode", which can perform the function of electrode and simultaneously the function of selective wavelength transparency. A strategically designed OPD architecture consisting of an etalon-electrode, a panchromatic organic active layer, and a counter electrode displays well-defined narrowband R-/G-/B-selective detectivity spectra depending on precision-adjusted thickness composition of the etalon-electrode. While a thin thickness of OPD is preserved at less than 800 nm including electrodes, active layer, and other buffer layers for all R-/G-/B-selective OPDs, high average detectivity values over 1012 cm·Hz0.5/W are demonstrated. Furthermore, the characteristic of imparting color selectivity by the etalon-electrode enables a more facile full color patterning, such that a prototype of a 10 × 10 image sensor with a pixel pitch of 500 µm is realized, resulting in accurate picturing of a well-defined full color image.

Facile Tuning the Detection Spectrum of Organic Thin Film Photodiode via Selective Exciton Activation.

Here, we introduce a method of tuning the high-detectivity spectra of the organic photodiode (OPD) to fabricate a thin-film filter-less full-color image sensor. The strategically introduced PIN junction enables a selective activation of excitons generated from the photons with low extinction coefficient in the active layer such that the separated holes/electrons can contribute to the external current. In addition, we show that a well-defined PIN junction blocks the injection of nonallowed charge carriers, leading to very low dark current and near-ideal diode characteristics. Consequently, the high specific detectivity over 1.0 × 1012 Jones are observed from R/G/B-selective thin-film OPDs.

Spatial Confinement of the Optical Sensitizer to Realize a Thin Film Organic Photodetector with High Detectivity and Thermal Stability.

A thin film planar heterojunction organic photodetector (PHJ-OPD) is demonstrated. Different from a conventional sensitizer-doped photodetector, the limited spatial distribution of sensitizer in a PHJ-OPD enables significantly reduced thickness of the active layer without allowing the formation of unnecessary trap sites and electron percolation pathways. As a result, peak external quantum efficiency (EQE) of 120 700% and detectivity over 1013 Jones are demonstrated with thin active layer thickness of 150 nm, which can be a significant benefit for high-resolution image sensor application. Furthermore, the operating voltage can be decreased to -5 V while maintaining high detectivity over 1012 Jones. Remarkable thermal stability is also observed with minor change in detectivity for 2 h of continuous operation at 60 °C due to morphological robustness of PHJ. This work opens up a possibility of using a thin film PHJ-OPD as a key unit of high-resolution image sensor.

Morphology-Driven High-Performance Polymer Transistor-based Ammonia Gas Sensor.

Developing high-performance gas sensors based on polymer field-effect transistors (PFETs) requires enhancing gas-capture abilities of polymer semiconductors without compromising their high charge carrier mobility. In this work, cohesive energies of polymer semiconductors were tuned by strategically inserting buffer layers, which resulted in dramatically different semiconductor surface morphologies. Elucidating morphological and structural properties of polymer semiconductor films in conjunction with FET studies revealed that surface morphologies containing large two-dimensional crystalline domains were optimal for achieving high surface areas and creating percolation pathways for charge carriers. Ammonia molecules with electron lone pairs adsorbed on the surface of conjugated semiconductors can serve as efficient trapping centers, which negatively shift transfer curves for p-type PFETs. Therefore, morphology optimization of polymer semiconductors enhances their gas sensing abilities toward ammonia, leading to a facile method of manufacturing high-performance gas sensors.