High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO[Formula: see text] on SrTiO[Formula: see text] (001).

The growth of SrRuO[Formula: see text] (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO[Formula: see text]-terminated SrTiO[Formula: see text] (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 [Formula: see text] 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to [Formula: see text] 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02 ± 1) reflections, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle ([Formula: see text]), and miscut direction ([Formula: see text]), giving a volume fraction of about 92 [Formula: see text] for [Formula: see text] 26.6 nm and [Formula: see text] (0.14[Formula: see text], 5[Formula: see text]). On the other hand, metallic and ferromagnetic properties were well preserved down to t [Formula: see text] 1.2 nm. Residual resistivity ratio (RRR = [Formula: see text]/[Formula: see text]) reduces from 77.1 for t [Formula: see text] 28.5 nm to 2.5 for t [Formula: see text] 1.2 nm, while [Formula: see text] increases from 2.5 [Formula: see text]cm for t [Formula: see text] 28.5 nm to 131.0 [Formula: see text]cm for t [Formula: see text] 1.2 nm. The ferromagnetic onset temperature ([Formula: see text]) of around 151 K remains nearly unchanged down to t [Formula: see text] 9.0 nm and decreases to 90 K for t [Formula: see text] 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3.

The interface between LaAlO3 (LAO) and SrTiO3 (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metallic interface. Taking advantage of the oxide molecular beam epitaxy (MBE) technique, a series of high quality LAO films with different nominal La/Al ratios and LAO thicknesses were grown on the TiO2-terminated STO substrates, where systematic variations of the LAO lattice constant and transport property were observed. In particular, the sheet density can be largely reduced by nearly an order of magnitude with merely about 20% increase in the nominal La/Al ratio. Our finding provides an effective method on tuning the electron density of the two-dimensional electron liquid (2DEL) at the LAO/STO interface.