Enlarged Color Gamut Representation Enabled by Transferable Silicon Nanowire Arrays on Metal-Insulator-Metal Films.

Artificial structural colors arising from nanosized materials have drawn much attention because of ultrahigh resolution, durability, and versatile utilizations compared to conventional pigments and dyes. However, the limited color range with current approaches has interrupted the supply for upcoming structural colorimetric applications. Here, we suggest a strategy for the widening of the color gamut by linear combination of two different resonance modes originating from silicon nanowire arrays (Si NWAs) and metal-insulator-metal nanoresonators. The enlarged color gamut representations are simply demonstrated by transferring Si NWAs embedded in a flexible polymer layer without additional treatment/fabrication. Optical simulation is used to verify the additive creation of a new resonance dip, without disturbing the original mode, and provides "predictable" color reproduction. Furthermore, we prove that the proposed structures are applicable to well-known semiconductor materials for various flexible optical devices and other colorant applications.

Mapping the structural, electrical, and optical properties of hydrothermally grown phosphorus-doped ZnO nanorods for optoelectronic device applications.

The phosphorus-doped ZnO nanorods were prepared using hydrothermal process, whose structural modifications as a function of doping concentration were investigated using X-ray diffraction. The dopant concentration-dependent enhancement in length and diameter of the nanorods had established the phosphorus doping in ZnO nanorods. The gradual transformation in the type of conductivity as observed from the variation of carrier concentration and Hall coefficient had further confirmed the phosphorus doping. The modification of carrier concentration in the ZnO nanorods due to phosphorus doping was understood on the basis of the amphoteric nature of the phosphorus. The ZnO nanorods in the absence of phosphorus showed the photoluminescence (PL) in the range of the ultraviolet (UV) and visible regimes. The UV emission, i.e. near-band-edge emission of ZnO, was found to be red-shifted after the doping of phosphorus, which was attributed to donor-acceptor pair formation. The observed emissions in the visible regime were due to the deep level emissions that were aroused from various defects in ZnO. The Al-doped ZnO seed layer was found to be responsible for the observed near-infrared (NIR) emission. The PL emission in UV and visible regimes can cover a wide range of applications from biological to optoelectronic devices.

Reflective color filter with precise control of the color coordinate achieved by stacking silicon nanowire arrays onto ultrathin optical coatings.

The engineering of structural colors is currently a promising, rapidly emerging research field because structural colors of outstanding spatial resolution and durability can be generated using a sustainable production method. However, the restricted and saturated color range in micro/nano-fabricated structural 'pigments' has hindered the dissemination of structural color printing. Here, this article presents a spectral mixing color filter (SMCF), which is the concept of fine-tunable color systems, capable of addressing the current issues in structural color engineering, by stacking a vertical silicon nanowire array embedded in a transparent polymer onto ultrathin optical coating layers. These two photonic structures enable independent tuning the optical resonance of each structure, depending on geometrical parameters, such as the diameter of nanowires and thickness of absorbing medium. Hence, the SMCF facilitates the linear combination of two resonant spectra, thereby enabling fine-tuning and widening of the color gamut. Theoretical studies and experimental results reveal the detailed working mechanisms and extraordinary mechanical feature of the SMCF. Based on the analyses, the concept of flexible optical device, e.g., a reflective anti-counterfeiting sticker, is demonstrated. Successful characterization demonstrates that the proposed strategy can promote the color controllability/purity of structural color and the applicability as flexible optical device.

A study of electron and thermal transport in layered titanium disulphide single crystals.

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T 2 dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T 2 to T 5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.