ABSTRACT
Understanding the dynamics of excited states after optical excitation at donor-acceptor (D/A) interfaces is of paramount importance for improving the efficiency and performance of optoelectronic devices. Here, we studied the ultrafast excited state dynamics after optical excitation at interfaces between the electron donor (D) pentacene (PEN) and the electron acceptor (A) perfuoropentacene (PFP) as well as within the single compounds (PEN and PFP) using femtosecond (fs) time-resolved second harmonic generation (SHG). In the single compounds singlet fission is observed on a time scale of around 200â fs. In the bilayer systems a huge SHG intensity rise is observed due to the creation of charge transfer states at the interface and accordingly to formation of a local electric field within tens of picoseconds. The local electric field and therefore the SHG signal intensity from the interface of PEN/PFP bilayer is much more intense compared to the PFP/PEN system because the PFP and PEN intermixing at the PEN/PFP interface is higher. Accordingly a population of defect states on a time scale of 55±12â ps has been proposed for PEN/PFP. Our study provides important insights into D/A charge transfer properties, which is needed for the understanding of the interfacial photophysics of pentacene-based organic compounds.
ABSTRACT
Theoretical studies using clusters as model systems have been extremely successful in explaining various photophysical phenomena in organic semiconductor (OSC) thin films. But they have not been able to satisfactorily simulate total and polarization-resolved absorption spectra of OSCs so far. In this work, we demonstrate that accurate spectra are predicted by time-dependent density functional theory (TD-DFT) when the employed cluster reflects the symmetry of the crystal structure and all monomers feel the same environment. Additionally, long-range corrected optimal tuned functionals are mandatory. For pentacene thin films, the computed electronic spectra for thin films then reach an impressive accuracy compared with experimental data with a deviation of less than 0.1 eV. This allows for accurate peak assignments and mechanistic studies, which paves the way for a comprehensive understanding of OSCs using an affordable and easy-to-use cluster approach.
ABSTRACT
Stable electrical doping of organic semiconductors is fundamental for the functionality of high performance devices. It is known that dopants can be subjected to strong diffusion in certain organic semiconductors. This work studies the impact of operating conditions on thin films of the polymer poly(3-hexylthiophene) (P3HT) and the small molecule Spiro-MeOTAD, doped with two differently sized p-type dopants. The negatively charged dopants can drift upon application of an electric field in thin films of doped P3HT over surprisingly large distances. This drift is not observed in the small molecule Spiro-MeOTAD. Upon the dopants' directional movement in P3HT, a dedoped region forms at the negatively biased electrode, increasing the overall resistance of the thin film. In addition to electrical measurements, optical microscopy, spatially resolved infrared spectroscopy, and scanning Kelvin probe microscopy are used to investigate the drift of dopants. Dopant mobilities of 10-9 to 10-8 cm2 V-1 s-1 are estimated. This drift over several micrometers is reversible and can be controlled. Furthermore, this study presents a novel memory device to illustrate the applicability of this effect. The results emphasize the importance of dynamic processes under operating conditions that must be considered even for single doped layers.
