ABSTRACT
Organic semiconductors (OSCs) have emerged as promising active layers for photoanodes to drive photoelectrochemical (PEC) oxidation reactions. Interfacing an OSC with an inorganic electron transport layer (ETL) is key to enabling both high performance and stability. While spectroelectrochemical techniques have been established for the evaluation of inorganic interfaces, allowing rational optimization toward higher performances, a similar level of understanding for hybrid organic-inorganic interfaces remains elusive. To close this knowledge gap, we first perform a systematic parameter study (ETL thickness, potential dependency, and light intensity) on a state-of-the-art organic photoanode to establish factors determining the photoelectrochemical impedance spectroscopy (PEIS) response. Coupled with in situ UV-Vis characterizations, key charge transfer processes are clearly assigned to the PEIS features.
ABSTRACT
The alloying of two-dimensional (2D) transition metal dichalcogenides (TMDs) is an established route to produce robust semiconductors with continuously tunable optoelectronic properties. However, typically reported methods for fabricating alloyed 2D TMD nanosheets are not suitable for the inexpensive, scalable production of large-area (m2) devices. Herein we describe a general method to afford large quantities of compositionally-tunable 2D TMD nanosheets using commercially available powders and liquid-phase exfoliation. Beginning with Mo(1-x)WxS2 nanosheets, we demonstrate tunable optoelectronic properties as a function of composition. We extend this method to produce Mo0.5W0.5Se2 MoSSe, WSSe, and quaternary Mo0.5W0.5SSe nanosheets. High-resolution scanning transmission electron microscopy (STEM) imaging confirms the atomic arrangement of the nanosheets, while an array of spectroscopic techniques is used to characterize the chemical and optoelectronic properties. This transversal method represents an important step towards upscaling tailored TMD nanosheets with a broad range of tunable optoelectronic properties for large-area devices.