Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation.

Quasi-phase-matched (QPM) GaAs structures, 0.5 mm thick, 10 mm long, and with 61-mum grating periods, were grown by a combination of molecular-beam epitaxy and hydride vapor phase epitaxy. These were characterized by use of mid-IR second-harmonic generation (SHG) with a ZnGeP(2) (ZGP) optical parametric oscillator as a pump source. The SHG efficiencies of QPM GaAs and QPM LiNbO(3) were directly compared, and a ratio of nonlinear coefficients d(14)(GaAs)/d(33) (LiNbO(3))=5.01+/-0.3 was found at 4.1-mum fundamental wavelength. For input pulse energies as low as 50muJ and approximately 60-ns pulse duration, an internal SHG conversion efficiency of 33% was measured in QPM GaAs.

Difference frequency generation of 8-microm radiation in orientation- patterned GaAs.

First-order quasi-phase-matched difference frequency generation of narrowband tunable mid-infrared light is demonstrated in orientation-patterned GaAs. The all-epitaxial orientation-patterned crystal is fabricated by a combination of molecular beam epitaxy and hydride vapor phase epitaxy. Lasers at 1.3 and 1.55 microm were mixed to give an idler output at 8 microm, with power and wavelength tuning consistent with theoretical estimates, indicating excellent material uniformity over the 19-mm-long and 500-microm-thick device.

Infrared ellipsometer for the study of surfaces, thin films, and superlattices.

An automatic infrared ellipsometer for the study of surface and interface phenomena has been constructed. The system is based on a Fourier transform spectrometer that we equipped with an ellipsometer unit. Polarizers and analyzers are of the ion-etched wire-grid type. Their rotation is governed by means of a computer-controlled stepping-motor system. A discussion of calibration procedures for the infrared range is given, and special attention is given to the problem of selecting the best measurement strategy. The polarization state of the reflected beam is determined by measuring the intensity at 72 regularly spaced polarizer/analyzer settings. It is found that the effects of interferometric polarization, beam wandering, and detector dichroism cannot be neglected. However, these error sources have been eliminated by analyzing the zeroth, second, and fourth harmonic components of the azimuthally recorded intensity. Both the multiplex advantage of Fourier transform spectroscopy and the phase sensitivity ofellipsometry are combined in this instrument. Measurements on superconducting films, superlattices, and doped GaAs films are reported.