Reconstruction of finite deep sub-wavelength nanostructures by Mueller-matrix scattered-field microscopy.

Computational super-resolution is a novel approach to break the diffraction limit. The Mueller matrix, which contains full-polarization information about the morphology and structure of a sample, can add super-resolution information and be a promising way to further enhance the resolution. Here we proposed a new approach called Mueller-matrix scattered-field microscopy (MSM) that relies on a computational reconstruction strategy to quantitatively determine the geometrical parameters of finite deep sub-wavelength nanostructures. The MSM adopts a high numerical-aperture objective lens to collect a broad range of spatial frequencies of the scattered field of a sample in terms of Mueller-matrix images. A rigorous forward scattering model is established for MSM, which takes into account the vectorial nature of the scattered field when passing through the imaging system and the effect of defocus in the measurement process. The experimental results performed on a series of isolated Si lines have demonstrated that MSM can resolve a feature size of λ/16 with a sub-7 nm accuracy. The MSM is fast and has a great measurement accuracy for nanostructures, which is expected to have a great potential application for future nanotechnology and nanoelectronics manufacturing.

Imaging Mueller matrix ellipsometry with sub-micron resolution based on back focal plane scanning.

The development of nanotechnology and nanomaterials has put forward higher requirements and challenges for precision measurement or nanometer measurement technology. In order to cope with this situation, a new type of imaging Mueller matrix ellipsometer (IMME) has been developed. A back focal plane scanning method is designed to make the IMME have the ability to measure multiple incident angles. A two-step calibration method is proposed to ensure the measurement accuracy of IMME. After calibration, the IMME can achieve measurement with wavelengths from 410 nm to 700 nm and incident angles from 0° to 65°. The lateral resolution of the IMME is demonstrated to be 0.8 µm over the entire measurement wavelength range. In addition, a Hadamard imaging mode is proposed to significantly improve the imaging contrast compared with the Mueller matrix imaging mode. Subsequently, the IMME is applied for the measurement of isotropic and anisotropic samples. Experimental results have demonstrated that the proposed IMME has the ability to characterize materials with complex features of lateral micron-distribution, vertical nano-thickness, optical anisotropy, etc., by virtue of its advantages of high lateral resolution and high precision ellipsometric measurement.