Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells.

Nickel oxide (NiOx) as a hole transport layer has been vastly investigated in perovskite solar cells (PSCs) due to the nature of p-type doping, highly transparent materials, and deep-lying valence bands. In this paper, a new phase based on trivalent Ni2O3 is synthesized by low temperature solution processing of mixed nickel (acetate/nitrate). In comparison, high-temperature solution-processing of divalent NiOx resulted in novel Ni2O3 thin films that display better consistency and superior energy compatibility with perovskite thin films. In this respect, high-performance perovskite solar cells are efficiently produced utilizing MA0.85FA0.15PbI0.9Cl0.1 perovskite with a power conversion efficiency (PCE) reaching 17.89% and negligible hysteresis comparable to 14.37% for NiOx. The Ni2O3-based PSCs reported the highest fill factor (FF) (82.66%) compared to that of divalent NiOx (67.53%). Different characterization studies and analyses supply proof of improved film quality, increased transport and extraction of charges, and suppressed charge recombination. Meanwhile, the device exhibits low hysteresis compared to sol-gel-processed NiOx.

Efficient and Stable Planar n-i-p Perovskite Solar Cells with Negligible Hysteresis through Solution-Processed Cu2 O Nanocubes as a Low-Cost Hole-Transport Material.

Organic-inorganic halide perovskite solar cells (PSCs) have reached certified efficiencies of over 23 % with expensive organic hole-transporting materials. However, the use of an inorganic hole-transport layer (HTL) remains crucial as it would reduce cost combined with higher mobility and stability. In this direction, the application of Cu2 O as the top layer in PSCs is still complicated owing to the difficulty of solution processing. Herein, a solution-processing method is reported for preparing Cu2 O nanocubes as a p-type HTL in regular structure (n-i-p) PSCs. The controlled synthesis of Cu2 O nanocubes in a size range of 60-80 nm is achieved without using any surfactants, which are usually toxic and tricky to remove. The new structure of these Cu2 O nanocubes enhances the carrier mobility with preferable energy alignment to the perovskite layer and superb stability. The PSCs based on these Cu2 O nanocubes HTMs could achieve an efficiency exceeding 17 % with high stability, whereas organic P3HT-based PSCs display an efficiency of 15.59 % with a poorer running stability. This indicates that Cu2 O nanocubes are a promising HTM for efficient and stable PSCs.

High Open-Circuit Voltage of 1.134 V for Inverted Planar Perovskite Solar Cells with Sodium Citrate-Doped PEDOT:PSS as a Hole Transport Layer.

Poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) plays an important role in inverted planar perovskite solar cells (IPPSCs) as an efficient hole extraction and transfer layer (HTL). The IPPSCs based on PEDOT:PSS normally display inferior performance with a reduced open-circuit voltage. To address this problem, here sodium citrate-doped PEDOT:PSS is adopted as an effective HTL for improving the performance of IPPSCs. Sodium citrate-doped PEDOT:PSS HTL improves the conversion efficiency of IPPSCs from 15.05% of reference cells to 18.39%. The large increase of the open-circuit voltage ( VOC) from 1.057 to 1.134 V is the main source for this performance enhancement. With the help of characterization analysis of ultraviolet photoelectron spectroscopy, scanning electron microscopy, electrochemical impedance spectroscopy, etc., the higher work function of the doped PEDOT:PSS film and the uniform crystallinity of the perovskite film on it are disclosed as the reasons for the increased VOC and the consequent performance enhancement.

The direct observation of electron backflow in an organic heterojunction formed by two n-type materials.

Many physical processes such as exciton interfacial dissociation, exciton interfacial recombination, and exciton-electron and exciton-hole interactions coexist at the interface of organic solar cells (OSC). In this study, the direction of free charge generation is defined as the direction from the interface to the side where free charges are left. For a p-n type device, the direction of free electron (hole) generation from exciton dissociation at the donor/accepter (D/A) interface is the same as the subsequent transportation direction under the built-in electric field. However, the direction of free electron (hole) generation from exciton-exciton recombination across the D/A interface is opposite to the direction of free charge transportation. Both free charges generated from exciton interfacial dissociation and recombination are contributed to the photocurrent for a p-n type device. In a device with a heterojunction formed by two n-type materials (here it is defined as an n-n type device), the direction of free electron (hole) generation from exciton recombination across the interface is also the same as the subsequent free charge transportation. At the same time, there are also some free electrons (free holes) generated by exciton interfacial dissociation. The direction of free charge generation from exciton dissociation for this n-n type device is also opposite to the direction of free charge transportation. However, only free charges generated from exciton interfacial recombination are contributed to the photocurrent for an n-n type device. But so far there has been no direct experimental evidence to prove the above theories. In this work, an NPB interfacial layer with a high LUMO was introduced in an n-n type OSC to inhibit the backflow of electrons, which are generated from exciton dissociation at the heterojunction formed by two n-type materials, enhancing the device performance accordingly. This work is conducive to interfacial engineering in an OSC to further improve its performance.

Bidirectional mediation of TiO2 nanowires field effect transistor by dipole moment from purple membrane.

Bacteriorhodopsin-embedded purple membrane (bR-PM) is one of the most promising biomaterials for various bioelectronics applications. In this work, we demonstrate that a dipole bio-originated from bR-PM can bidirectionally mediate the performance of a bottom-contact TiO(2) nanowire field effect transistor (FET) for performance improvement. When negative gate voltage is applied, both transfer and output characteristics of the TiO(2) nanowire FET are enhanced by the bR-PM modification, resulting in a hole mobility increased by a factor of 2. The effect of the number of the deposited bR-PM layers on the normalized DeltaI(D) of the FET suggests that the additional electric field generated by the dipole moment natively existing in bR-PM actually boosts the performance of the TiO(2) nanowires FET.

Evidence of harvesting electricity by exciton recombination in an n-n type solar cell.

Free electrons and holes bounded by weak interactions in organic molecules must be generated from excitons to produce photocurrent in organic solar cells. Free charge carriers, in either small molecule- or polymer-based solar cells, are generated so far by dissociation of excitons at the donor-acceptor interface through injecting electrons (holes) from a donor (acceptor) into an acceptor (donor) while leaving holes (electrons) in the donor (acceptor). Here we report a new way, intermolecular exciton recombination, to generate free carriers from organic semiconductors. Unlike the exciton dissociation between donor and acceptor, the recombination of electrons from perfluorinated hexadecafluorophthalo-cyaninatozinc (F16ZnPc) with holes from fullerene (C(60)) frees their counterpart carriers. A new organic solar cell based on this intermolecular exciton recombination at the interface is fabricated to clearly demonstrate this new way to produce free carriers and then harvest electricity from sunlight.