ABSTRACT
We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions.
ABSTRACT
Monoclinic Ta3N5 thin films were synthesized by thermal nitridation of amorphous Ta2O5 films directly sputtered by radio frequency magnetron sputtering. The samples were studied by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, UV-Vis-NIR spectrophotometry, rietveld refinements, spectroscopic ellipsometry and electrochemical techniques. The surface composition of Ta3N5 thin film was found to be different than the underlying film, affecting the optical properties of the material. Rietveld refinement has confirmed that the nitridation process results in Schottky and oxygen substitutional defects within the crystalline structure of monoclinic Ta3N5 thin film. The optical constants of the film were obtained by spectroscopic ellipsometry within a spectral range of 4.60-0.54 eV, i.e. 270-2300 nm. The suitable parameterization was found to consist of three Tauc-Lorentz and one Lorentz oscillators. The conduction band, valence band and the flat band positions were determined by photoelectrochemical techniques, presenting a strong dependence on pH of the eletrolyte. Improved photocurrent was obtained in alkaline conditions and attributed to the shorter depletion region width measured by Mott-Schottky and the lower recombination life time measured by open circuit potential decay analyses.
ABSTRACT
Put the right spin on it: Mixed monomeric organotin(IV) chalcogenides of the general formula L(2)Sn(2)EX(2) containing two terminal Sn-X (X = Se, Te) bonds were prepared and were tested as potential single-source precursors for the deposition of semiconducting thin films. Spin-coating deposition of [{2,6-(Me(2)NCH(2))(2)C(6)H(3)}SnSe](2)(µ-S), as the useful single-source precursor, provided amorphous Sn-S-Se semiconducting thin films.
