ABSTRACT
Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or Z1,2 transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the Z1,2 transition, and only the first stage, Z10, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.
ABSTRACT
Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly applied to reveal defects causing states that are localised in the energy gap, these methods also sense-charge from quantum wells in heterostructures. However, proper evaluation of material response to external stimuli requires knowledge of material properties such as electron effective mass in complex structures. Here we propose a method for precise evaluation of effective mass in quantum well heterostructures. The infinite well model is successfully applied to the InGaAsN/GaAs quantum well structure and used to evaluate electron effective mass in the conduction and valence bands. The effective mass m/m0 of charges from the conduction band was 0.093 ± 0.006, while the charges from the valence band exhibited an effective mass of 0.122 ± 0.018.
ABSTRACT
The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current-voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport.
