Mechanical Compatibility between Mg3(Sb,Bi)2 and MgAgSb in Thermoelectric Modules.

Thermoelectric (TE) modules are exposed to temperature gradients and repeated thermal cycles during their operation; therefore, mechanically robust n- and p-type legs are required to ensure their structural integrity. The difference in the coefficients of thermal expansion (CTEs) of the two legs of a TE module can cause stress buildup and the deterioration of performance with frequent thermal cycles. Recently, n-type Mg3Sb2 and p-type MgAgSb have become two promising components of low-temperature TE modules because of to their high TE performance, nontoxicity, and abundance. However, the CTEs of n-Mg3Sb2 and p-MgAgSb differ by approximately 10%. Furthermore, the oxidation resistances of these materials at increased temperatures are unclear. This work manipulates the thermal expansion of Mg3Sb2 by alloying it with Mg3Bi2. The addition of Bi to Mg3Sb2 reduces the coefficient of linear thermal expansion from 22.6 × 10-6 to 21.2 × 10-6 K-1 for Mg3Sb1.5Bi0.5, which is in excellent agreement with that of MgAgSb (21 × 10-6 K-1). Furthermore, thermogravimetric data indicate that both Mg3Sb1.5Bi0.5 and MgAgSb are stable in air and Ar at temperatures below ∼570 K. The results suggest the compatibility and robustness of Mg3Sb1.5Bi0.5 and MgAgSb as a pair of thermoelectric legs for low-temperature TE modules.

Local-Disorder-Induced Low Thermal Conductivity in Degenerate Semiconductor Cu22Sn10S32.

S-based semiconductors are attracting attention as environmentally friendly materials for energy-conversion applications because of their structural complexity and chemical flexibility. Here, we show that the delicate interplay between the chemical composition and cationic order/disorder allows one to stabilize a new sphalerite derivative phase of cubic symmetry in the Cu-Sn-S diagram: Cu22Sn10S32. Interestingly, its crystal structure is characterized by a semiordered cationic distribution, with the Cu-Sn disorder being localized on one crystallographic site in a long-range-ordered matrix. The origin of the partial disorder and its influence on the electronic and thermal transport properties are addressed in detail using a combination of synchrotron X-ray diffraction, Mössbauer spectroscopy, transmission electron microscopy, theoretical modeling, and transport property measurements. These measurements evidence that this compound behaves as a pseudogap, degenerate p-type material with very low lattice thermal conductivity (0.5 W m-1 K-1 at 700 K). We show that localized disorder is very effective in lowering κL without compromising the integrity of the conductive framework. Substituting pentavalent Sb for tetravalent Sn is exploited to lower the hole concentration and doubles the thermoelectric figure of merit ZT to 0.55 at 700 K with respect to the pristine compound. The discovery of this semiordered cubic sphalerite derivative Cu22Sn10S32 furthers the understanding of the structure-property relationships in the Cu-Sn-S system and more generally in ternary and quaternary Cu-based systems.

Synergistic Effect of Chemical Substitution and Insertion on the Thermoelectric Performance of Cu26V2Ge6S32 Colusite.

Copper-based sulfides are promising materials for thermoelectric applications, which can convert waste heat into electricity. This study reports the enhanced thermoelectric performance of Cu26V2Ge6S32 colusite via substitution of antimony (Sb) for germanium (Ge) and introduction of copper (Cu) as an interstitial atom. The crystal structure of the solid solutions and Cu-rich compounds were analyzed by powder X-ray diffraction and scanning transmission electron microscopy. Both chemical approaches decrease the hole carrier concentration, which leads to a reduction in the electronic thermal conductivity while keeping the thermoelectric power factor at a high value. Furthermore, the interstitial Cu atoms act as phonon scatterers, thereby decreasing the lattice thermal conductivity. The combined effects increase the dimensionless thermoelectric figure of merit ZT from 0.3 (Cu26V2Ge6S32) to 0.8 (Cu29V2Ge5SbS32) at 673 K.

A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4.

Famatinite Cu3SbS4 has attracted attention for its potential application in thermoelectric (TE) contexts. In this work, we report the impacts of co-substituting Ge and P for Sb on TE properties. Melting and heat treatment methods were adopted to synthesize samples of Cu3Sb1-x-yGexPyS4 (x≤ 0.4, y≤ 0.3). In this system, Ge functioned as an acceptor for doping a hole to the valence band, which led to enhancement of the TE power factor. Contrastingly, P barely altered the electronic structure. Furthermore, both Ge and P acted as point defects, which effectively decreased lattice thermal conductivity. The combined effects of the co-substitution gave rise to an enhanced dimensionless figure of merit, ZT, of 0.67 at 673 K.

Copper-Rich Thermoelectric Sulfides: Size-Mismatch Effect and Chemical Disorder in the [TS4 ]Cu6 Complexes of Cu26 T2 Ge6 S32 (T=Cr, Mo, W) Colusites.

Herein, we investigate the Mo and W substitution for Cr in synthetic colusite, Cu26 Cr2 Ge6 S32 . Primarily, we elucidate the origin of extremely low electrical resistivity which does not compromise the Seebeck coefficient and leads to outstanding power factors of 1.94 mW m-1 K-2 at 700 K in Cu26 Cr2 Ge6 S32 . We demonstrate that the abnormally long iono-covalent T-S bonds competing with short metallic Cu-T interactions govern the electronic transport properties of the conductive "Cu26 S32 " framework. We address the key role of the cationic size-mismatch at the core of the mixed tetrahedral-octahedral complex over the transport properties. Two essential effects are identified: 1) only the tetrahedra that are directly bonded to the [TS4 ]Cu6 complex are significantly distorted upon substitution and 2) the major contribution to the disorder is localized at the central position of the mixed tetrahedral-octahedral complex, and is maximized for x=1, i.e. for the highest cationic size-variance, σ2 .

Thermoelectric Properties and Electronic Structures of CuTi2S4 Thiospinel and Its Derivatives: Structural Design for Spinel-Related Thermoelectric Materials.

We report the preparations, thermoelectric and magnetic properties, and electronic structures of Cu-Ti-S systems, namely, cubic thiospinel c-Cu1- xTi2S4 ( x ≤ 0.375), a derivative cubic and Ti-rich phase c-Cu1- xTi2.25S4 ( x = 0.5, 0.625), and a rhombohedral phase r-CuTi2S4. All samples have the target compositions except for r-CuTi2S4, whose actual composition is Cu1.14Ti1.80S4. All of the phases have n-type metallic character and exhibit Pauli paramagnetism, as proven by experiments and first-principles calculations. The Cu and Ti deficiencies in c-Cu1- xTi2S4 and r-CuTi2S4, respectively, decrease the electron-carrier concentration, whereas the "excess" of Ti ions in c-Cu1- xTi2.25S4 largely increases it. For r-CuTi2S4, the reduced carrier concentration increases the electrical resistivity and Seebeck coefficient, leading to the highest thermoelectric power factor of 0.5 mW K-2 m-1 at 670 K. For all of the Cu-Ti-S phases, the thermal conductivity at 670 K is 3.5-5 W K-1 m-1, where the lattice part of the conductivity is as low as 1 W K-1 m-1 at 670 K. As a result, r-CuTi2S4 shows the highest dimensionless thermoelectric figure of merit ZT of 0.2. The present systematic study on the Cu-Ti-S systems provides insights into the structural design of thermoelectric materials based on Cu-M-S (M = transition-metal elements).

Retreat from Stress: Rattling in a Planar Coordination.

Thermoelectric devices convert heat flow to charge flow, providing electricity. Materials for highly efficient devices must satisfy conflicting requirements of high electrical conductivity and low thermal conductivity. Thermal conductivity in caged compounds is known to be suppressed by a large vibration of guest atoms, so-called rattling, which effectively scatters phonons. Here, the crystal structure and phonon dynamics of tetrahedrites (Cu,Zn)12 (Sb,As)4 S13 are studied. The results reveal that the Cu atoms in a planar coordination are rattling. In contrast to caged compounds, chemical pressure enlarges the amplitude of the rattling vibration in the tetrahedrites so that the rattling atom is squeezed out of the planar coordination. Furthermore, the rattling vibration shakes neighbors through lone pairs of the metalloids, Sb and As, which is responsible for the low thermal conductivity of tetrahedrites. These findings provide a new strategy for the development of highly efficient thermoelectric materials with planar coordination.

High-Performance Thermoelectric Bulk Colusite by Process Controlled Structural Disordering.

High-performance thermoelectric bulk sulfide with the colusite structure is achieved by controlling the densification process and forming short-to-medium range structural defects. A simple and powerful way to adjust carrier concentration combined with enhanced phonon scattering through point defects and disordered regions is described. By combining experiments with band structure and phonons calculations, we elucidate, for the first time, the underlying mechanism at the origin of intrinsically low thermal conductivity in colusite samples as well as the effect of S vacancies and antisite defects on the carrier concentration. Our approach provides a controlled and scalable method to engineer high power factors and remarkable figures of merit near the unity in complex bulk sulfide such as Cu26V2Sn6S32 colusites.

Effects of Ge and Sn substitution on the metal-semiconductor transition and thermoelectric properties of Cu12Sb4S13 tetrahedrite.

The synthetic tetrahedrites Cu12-yTrySb4S13 (Tr: Mn, Fe, Co, Ni, Zn) have been extensively studied due to interest in metal-semiconductor transition as well as in superior thermoelectric performance. We have prepared Ge- and Sn-bearing tetrahedrites, Cu12-xMxSb4S13 (M = Ge, Sn; x ≤ 0.6), and investigated the effects of the substitutions on the phase transition and the thermoelectric properties. The substitutions of Ge and Sn for Cu suppress the metal-semiconductor transition and increase the electrical resistivity ρ and the positive thermopower S. This finding suggests that the phase transition is prevented by electron doping into the unoccupied states of the valence band. The variations of ρ, S, and magnetic susceptibility for the present systems correspond well with those for the system with Tr = Zn2+, confirming the tetravalent states for Ge and Sn. The substitution of M4+ for Cu1+ decreases the power factor S2/ρ but enhances the dimensionless thermoelectric figure of merit ZT, due to reductions in both the charge carrier contribution and lattice contribution to the thermal conductivity. As a result, ZT has a maximum value of ∼0.65 at 665 K for x = 0.3-0.5 in Cu12-xMxSb4S13 with M = Ge and Sn.

Combined X-ray and neutron diffraction study of vacancies and disorder in the dimorphic clathrate Ba8Ga16Sn30 of type I and VIII.

We report detailed structural investigations of the dimorphic clathrate Ba8Ga16Sn30 that crystallizes in both type I and VIII clathrate structures. Single crystals of type I and VIII have been examined using single crystal X-ray and Laue neutron diffraction in the temperature range T = 10 K-500 K. The utilization of both X-ray and neutron diffraction gives a unique ability to reveal the occurrence of minute vacancy occupancies in the host structure. The vacancies are shown to be located on the 6c (type I) and 24g (type VIII) framework sites. Largest vacancy densities are observed for type I p-Ba8Ga16Sn30, 1.3(4)%, and type VIII n-Ba8Ga16Sn30, 0.7(2)%. The relation between guest atom disorder and occurrence of glasslike thermal conductivity in intermetallic clathrates was also investigated. In type VIII Ba8Ga16Sn30 neither n-type (crystalline thermal conductivity) nor p-type (glasslike thermal conductivity) showed any significant disorder of the guest atoms; they do however show anharmonic motion. The glasslike thermal conductivity of p-type Ba8Ga16Sn30 is interpretable as a result of higher effective mass of p-type charge-carriers affecting phonon scattering. In type I Ba8Ga16Sn30 guest atoms are highly disordered for both carrier types and samples of both charge carrier types have glasslike thermal conductivity.

High-pressure synthesis and superconductivity of a new binary lanthanum germanide LaGe3 with triangular Ge3 cluster units.

We prepared a new binary lanthanum germanide, LaGe(3), under high-pressure and high-temperature conditions (3-12 GPa, 500-1200 °C). It crystallizes in the BaPb(3) structure (the space group R ̅3m) with lattice constants of a = 6.376(1) Å, c = 22.272(3) Å, and V = 784.1(2) Å(3). We refined the structure using Rietveld analysis from X-ray powder data. The structure is composed of two types of close-packed atom layers. In one layer, every La atom is surrounded solely by Ge atoms with the same distance of 3.188 Å. The other layer contains Ge(3) regular, triangular cluster units with a Ge-Ge distance of 2.634 Å. The electron localization function and crystal orbital Hamilton population calculations suggest that the triangular cluster is composed of three Ge-Ge covalent bonds and that each Ge atom has a lone pair. The temperature dependence of the magnetic susceptibility and electrical conductivity measurements revealed that LaGe(3) is metallic and shows superconductivity at 7.4 K. This critical temperature is highest for the La-Ge system.