Synthesis mechanism from graphene quantum dots to carbon nanotubes by ion-sputtering assisted chemical vapor deposition.

We present the first work of the synthesis mechanism from graphene quantum dots (GQDs) to carbon nanotubes (CNTs) by an ion-sputtering assisted chemical vapor deposition. During the annealing process, a Pt thin film deposited by the ion-sputtering was dewetted and agglomerated to form many nanometer-sized particles, leading to Pt nanoparticles (PtNPs) that can act as catalysts for creating carbon allotropes. The shape of the allotropes can be effectively tailored from GQDs to CNTs by controlling three key parameters such as the dose of catalytic ions (D), amounts of carbon source (S), and thermal energy (T). In our work, it was clearly proved that the growth control from GQDs to CNTs has a comparably proportional relationship with D and S, but has a reverse proportional relationship with T. Furthermore, high-purity GQDs without any other by-products and the CNTs with the cap of PtNPs were generated. Their shapes were appropriately controlled, respectively, based on the established synthesis mechanism.

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment.

This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality.

A mechanism of surface hardness enhancement for H+ irradiated polycarbonate.

H+ irradiation increases the surface hardness of polycarbonate. Nano indentation measurement shows that the hardness increases up to 3.7 GPa at the dose of 5 × 1016 # cm-2 and at the irradiation energy of 150 keV. In addition, the hardness increases with the dose and the energy of H+ irradiation. In accordance with the nano indentation measurement, the Fourier-transform infrared spectroscopy (FTIR) depends on the dose and energy of H+ irradiation. The peak at ∼1500 cm-1 for the aromatic ring and the peak at ∼1770 cm-1 for the C[double bond, length as m-dash]O stretch decrease with increasing dose and energy, while the increase of the dose and energy develops a new C[double bond, length as m-dash]O stretch vibration at ∼1700 cm-1 and forms aromatic hydrocarbons at ∼1600 cm-1. X-ray diffraction experiments are also consistent with the nano indentation measurement and FTIR spectra. Based on the experiments, we discuss a possible mechanism of the surface hardness enhancements by ion beam irradiation.