Strongly Compressed Few-Layered SnSe2 Films Grown on a SrTiO3 Substrate: The Coexistence of Charge Ordering and Enhanced Interfacial Superconductivity.

High pressure has been demonstrated to be a powerful approach of producing novel condensed-matter states, particularly in tuning the superconducting transition temperature (Tc) of the superconductivity in a clean fashion without involving the complexity of chemical doping. However, the challenge of high-pressure experiment hinders further in-depth research for underlying mechanisms. Here, we have successfully synthesized continuous layer-controllable SnSe2 films on SrTiO3 substrate using molecular beam epitaxy. By means of scanning tunneling microscopy/spectroscopy (STM/S) and Raman spectroscopy, we found that the strong compressive strain is intrinsically built in few-layers films, with a largest equivalent pressure up to 23 GPa in the monolayer. Upon this, unusual 2 × 2 charge ordering is induced at the occupied states in the monolayer, accompanied by prominent decrease in the density of states (DOS) near the Fermi energy (EF), resembling the gap states of CDW reported in transition metal dichalcogenide (TMD) materials. Subsequently, the coexistence of charge ordering and the interfacial superconductivity is observed in bilayer films as a result of releasing the compressive strain. In conjunction with spatially resolved spectroscopic study and first-principles calculation, we find that the enhanced interfacial superconductivity with an estimated Tc of 8.3 K is observed only in the 1 × 1 region. Such superconductivity can be ascribed to a combined effect of interfacial charge transfer and compressive strain, which leads to a considerable downshift of the conduction band minimum and an increase in the DOS at EF. Our results provide an attractive platform for further in-depth investigation of compression-induced charge ordering (monolayer) and the interplay between charge ordering and superconductivity (bilayer). Meanwhile, it has opened up a pathway to prepare strongly compressed two-dimensional materials by growing onto a SrTiO3 substrate, which is promising to induce superconductivity with a higher Tc.

Layer-Stacking, Defects, and Robust Superconductivity on the Mo-Terminated Surface of Ultrathin Mo2C Flakes Grown by CVD.

Materials can exhibit exotic properties when they approach the two-dimensional (2D) limit. Because of promising applications in catalysis and energy storage, 2D transition-metal carbides (TMCs) have attracted considerable attention in recent years. Among these TMCs, ultrathin crystalline α-Mo2C flakes have been fabricated by chemical vapor deposition on Cu/Mo bilayer foils, and their 2D superconducting property was revealed by transport measurements. Herein, we studied the ultrathin α-Mo2C flakes by atomic-resolved scanning tunneling microscopy/spectroscopy (STM/S). Strain-related structural modulation and the coexistence of different layer-stacking modes are observed on the Mo-terminated surface of α-Mo2C flakes as well as various lattice defects. Furthermore, an enhanced superconductivity with shorter correlation length was observed by STS technique, and such superconductivity is very robust despite the appearance of the defects. A mechanism of superconducting enhancement is proposed based on the strain-induced strong coupling and the increased disordering originated from lattice defects. Our results provide a comprehensive understanding of the correlations between atomic structure, defects, and enhanced superconductivity of this emerging 2D material.

Epitaxial Growth of PbSe Few-Layers on SrTiO3: The Effect of Compressive Strain and Potential Two-Dimensional Topological Crystalline Insulator.

The freestanding PbSe monolayer has been predicted as a candidate of the two-dimensional topological crystalline insulator, which possesses the Dirac-cone-like edge states resided at the edge. Up to now, however, direct experimental evidence of topological PbSe monolayer has not yet been reported. Here, we report the epitaxial growth and scanning tunneling microscopy study of few-layers PbSe islands grown on SrTiO3 substrate. From the investigation of different thickness, we discover the release of compressive strain and the reduction of bandgap as the thickness becomes thick. Following detailed spectroscopic measurements, a signature of Dirac-like edge states is observed at the edge of seventh-layer PbSe. In conjunction with first-principle calculations, we find that compressive-strain-induced buckling adjusts the topological band inversion and eventually leads to a phase transition from nontrivial two-dimensional topological crystalline insulator to trivial insulator, which match well with our experimental observations. Therefore, both theoretical calculations and experimental observations reveal that the strain can effectively affect the property of epitaxial PbSe, meanwhile demonstrate seventh-layer PbSe as a potential candidate of 2D TCI.

Scanning tunneling microscopic observation of enhanced superconductivity in epitaxial Sn islands grown on SrTiO3 substrate.

Recent experimental and theoretical studies of single-layer FeSe film grown on SrTiO3 have revealed interface enhanced superconductivity, which opens up a pathway to promote the superconducting transition temperature. Here, to investigate the role of SrTiO3 substrate in epitaxial superconducting film, we grew a conventional superconductor ß-Sn (bulk Tc ∼ 3.72 K) onto SrTiO3 substrate by molecular beam epitaxy. By employing scanning tunneling microscope and spectroscopic measurements, an enhanced Tc of 8.2 K is found for epitaxial ß-Sn islands, deduced by fitting the temperature dependence of the gap values using the BCS formula. The observed interfacial charge injection and enhanced electron-phonon coupling are responsible for this Tc enhancement. Moreover, the critical field of 8.3 T exhibits a tremendous increase due to the suppression of the vortex formation. Therefore, the coexistence of enhanced superconductivity and high critical field of Sn islands demonstrates a feasible and effective route to improve the superconductivity by growing the islands of conventional superconductors on perovskite-type titanium oxide substrates.