ABSTRACT
Herein, we investigate the Mo and W substitution for Cr in synthetic colusite, Cu26 Cr2 Ge6 S32 . Primarily, we elucidate the origin of extremely low electrical resistivity which does not compromise the Seebeck coefficient and leads to outstanding power factors of 1.94â mW m-1 K-2 at 700â K in Cu26 Cr2 Ge6 S32 . We demonstrate that the abnormally long iono-covalent T-S bonds competing with short metallic Cu-T interactions govern the electronic transport properties of the conductive "Cu26 S32 " framework. We address the key role of the cationic size-mismatch at the core of the mixed tetrahedral-octahedral complex over the transport properties. Two essential effects are identified: 1)â only the tetrahedra that are directly bonded to the [TS4 ]Cu6 complex are significantly distorted upon substitution and 2)â the major contribution to the disorder is localized at the central position of the mixed tetrahedral-octahedral complex, and is maximized for x=1, i.e. for the highest cationic size-variance, σ2 .
ABSTRACT
High-performance thermoelectric bulk sulfide with the colusite structure is achieved by controlling the densification process and forming short-to-medium range structural defects. A simple and powerful way to adjust carrier concentration combined with enhanced phonon scattering through point defects and disordered regions is described. By combining experiments with band structure and phonons calculations, we elucidate, for the first time, the underlying mechanism at the origin of intrinsically low thermal conductivity in colusite samples as well as the effect of S vacancies and antisite defects on the carrier concentration. Our approach provides a controlled and scalable method to engineer high power factors and remarkable figures of merit near the unity in complex bulk sulfide such as Cu26V2Sn6S32 colusites.
