Self-powered, wide spectral UV response out-of-plane photodetector based on ZnO/porous silicon heterostructure.

The photoresponse of the ZnO/porous silicon (p-Si) heterojunction is studied in an out-of-plane contact configuration. p-Si substrate is fabricated by anodic etching followed by the electrochemical deposition of ZnO NR film, forming ZnO/p-Si heterojunction. XRD study is done to understand the effect of the substrate on ZnO film growth in terms of strain and crystal size. UV-vis absorbance spectrum shows a broad absorption for wavelengths from 230 to 380 nm. The PL emission shows two narrow and prominent electron transition peaks at 263 and 383 nm and a peak of ∼550 nm corresponding to defects. The 263 nm wavelength responsivity of the photodetector from UV-vis and PL data suggests the presence of a defective SiOxas an intermediate layer between ZnO and p-Si. The photodetector is measured for its spectral selectivity and responsivity for both 266 and 370 nm. Under self-powered conditions, the device shows a low dark current of a few nA and enhancement of ∼100 nA and ∼1.37µA for both wavelengths. A responsivity of 527 mA W-1and 10.5µA W-1and detectivity of 2.5 × 1010and 2.9 × 107Jones at 1 V bias under 266 and 370 nm UV illumination are observed. The fast rise/decay time of 67/65 ms and 29/18 ms is observed for the self-powered condition of the device under both wavelengths respectively. The photoresponse of the modified ZnO/SiOx/p-Si heterojunction for both wavelengths is analyzed for the electron transfer mechanism using the heterojunction band bending model. The short circuit current and open circuit voltage of the photodetector is estimated to be 293 nA, 56.33 mV, and 13.63µA, 124.8 mV for 266 and 370 nm, respectively. It is concluded that the 266 nm responsivity comes from the defects in SiOxintermediate layer, and the photocurrent generated in the device is due to tunneling across the junction.

3D Printed Lattice Template by Material Extrusion Technique for Fabrication of Pixelated Photodetector.

Rigid and flexible, pixelated ultraviolet photodetectors (PD) based on ZnO have been fabricated by material extrusion 3D printing technique. The photoresponse is studied in an out-of-plane configuration. An open lattice structure is printed using PLA over ITO/Glass substrate for rigid, and TPU over ITO/PET substrate for flexible PDs. ZnO slurry is filled selectively into the columnar matrix by the microdispensing technique. The optical detector printed on ITO/Glass substrate shows a sensitivity of 25 and responsivity of 1.55 nA/mW with a rise and decay time of 1.6 and 0.6 s, respectively. Similarly, the flexible PD printed using TPU lattice shows a sensitivity of 9.5 and responsivity of 0.38 nA/mW with a rise and decay time of 1.8 and 0.6 s, respectively. The charge transport mechanism is studied using band diagram analysis. 3D printed open lattice structure is found to be a potential template for sensor fabrication. This work demonstrates the capability of material extrusion 3D printing with an open lattice structure for the fabrication of high-resolution pixelated PDs.

Wide spectral photoresponse of template assisted out of plane grown ZnO/NiO composite nanowire photodetector.

Zinc oxide (ZnO) one-dimensional nanostructures are extensively used in ultra-violet (UV) detection. To improve the optical sensing capability of ZnO, various nickel oxide (NiO) based p-n junctions have been employed. ZnO/NiO heterojunction based sensing has been limited to UV detection and not been extended to the visible region. In the present work, p-NiO/n-ZnO composite nanowire (NW) heterojunction based UV-visible photodetector is fabricated. A porous anodic aluminum oxide template based electrochemical deposition method is adopted for well separated and vertically aligned growth of composite NWs. The photoresponse is studied in an out of plane contact configuration. The fabricated photodetector shows fast response under UV-visible light with a rise and decay time of tens of ms. The wide spectral photoresponse is analyzed in terms of conduction from defect states of ZnO and interfacial defects during p-n junction formation. Light interaction with heterojunction along the length of the composite NW results in enhanced visible photoresponse of the detector and is further supported by simulation.

Robust visibility of graphene monolayer on patterned plasmonic substrates.

Single and few-layer graphene flakes, while visible on a dielectric surface with customized thickness, cannot be optically imaged when exfoliated directly on semiconductors or metal substrates with arbitrary thickness. In this paper, we show that such graphene flakes become visible through a conventional microscope on a substrate patterned with a submicron sized, hexagonally packed array of gold disks. The interaction of the metal pattern with the incident light generates surface plasmon polaritons (SPPs) and results in enhanced reflectivity for certain angles and wavelengths. In the areas where graphene flakes are present, the interaction of the SPP with incident radiation is altered and consequently decreases the reflectivity in this region and increases the contrast, which accounts for the visibility of the graphene flakes on such substrates. We validate the observed contrast in visibility utilizing an in-house developed modified form of rigorous coupled wave analysis algorithm to appropriately incorporate the optical properties of two-dimensional materials. We present a parametric study of the contrast of graphene flakes on the patterned substrate to demonstrate the robustness of the visibility.

Fast response UV detection based on waveguide characteristics of vertically grown ZnO nanorods partially embedded in anodic alumina template.

Zinc oxide (ZnO)-based ultraviolet (UV) detector has been fabricated and its photoresponse is studied in an out-of-plane contact configuration. Porous anodic aluminum oxide (AAO) template-based deposition method is adopted for the aligned and well-separated growth of ZnO nanorods (NRs). Through-hole in silicon (Si) by modified metal assisted chemical etching is used as a window for the electrochemical deposition of ZnO in the template and for out-of-plane electrical contacts during device analysis. The fabricated photodetector shows a fast response under UV (365 nm) light illumination, with rise and decay times of 31 ± 2 ms and 85 ± 3 ms, respectively. This fast response is analysed in terms of vertical growth and the waveguide nature of ZnO NRs embedded in anodic alumina. These results are further supported by a simulation comparing the electric field distribution of ZnO NR embedded in AAO with that of bare ZnO NR.

Comparative Study of Photoresponse from Vertically Grown ZnO Nanorod and Nanoflake Films.

Zinc oxide (ZnO) based ultraviolet (UV) photodetectors have been fabricated and their photoresponse is studied in Schottky diode configuration. A cost-effective single-step electrochemical deposition method is adopted for the growth of ZnO film with nanorod (NR) and nanoflake morphology. A comparative study of the photodetection parameters based on surface trap states, crystallinity, and strain is done for two different morphology films. Significant photocurrent enhancement is observed for the nanorods under UV light, with appreciable photoresponse in the blue region. A template-assisted growth of ZnO NR film is proposed for better photoresponse and sensitivity of the device, useful for various optoelectronic applications.