A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite-Silicon Tandems.

The primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide-based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite-silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area.

Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells.

Silicon solar cells are approaching their theoretical efficiency limit of 29%. This limitation can be exceeded with advanced device architectures, where two or more solar cells are stacked to improve the harvesting of solar energy. In this work, we devise a tandem device with a perovskite layer conformally coated on a silicon bottom cell featuring micrometric pyramids-the industry standard-to improve its photocurrent. Using an additive in the processing sequence, we regulate the perovskite crystallization process and alleviate recombination losses occurring at the perovskite top surface interfacing the electron-selective contact [buckminsterfullerene (C60)]. We demonstrate a device with an active area of 1.17 square centimeters, reaching a certified power conversion efficiency of 31.25%.

Optical and electrical design guidelines for ZnO/CdS nanorod-based CdTe solar cells.

An alternative structure to planar CdTe solar cells is realized by coating ZnO/CdS nanorods (NRs) with a CdTe layer. These structures are expected to achieve high-powered conversion efficiencies through enhanced light absorption and charge carrier collection. ZnO NR-based CdTe solar cell efficiencies; however, they have remained well below their planar counterparts, thus hindering NRs in CdTe solar cells' advantages. Here, we analyze the light trapping and carrier collection efficiencies in two types of ZnO NR-based CdTe solar cells through optical and electrical simulations. The buried CdTe solar cells are formed by completely filling the gaps in between ZnO/CdS NRs. This produces a maximum achievable photo-current of 27.4 mA/cm2 when 2000 nm-tall and 20̊-angularly-deviated NRs are used. A short-circuit current density of 27.3 mA/cm2 is achievable with the same geometry for 5 rods/µm2-dense NRs when a moderate CdTe doping density and a CdS/CdTe surface velocity of 1016 cm-3 and 104 cm/s are used, respectively. We reveal the potential of buried CdTe solar cell for high-charge carrier collection and provide a design guideline in order to achieve high short-circuit current densities with ZnO NR-based CdTe solar cells.

Strain Engineering of Germanium Nanobeams by Electrostatic Actuation.

Germanium (Ge) is a promising material for the development of a light source compatible with the silicon microfabrication technology, even though it is an indirect-bandgap material in its bulk form. Among various techniques suggested to boost the light emission efficiency of Ge, the strain induction is capable of providing the wavelength tunability if the strain is applied via an external force. Here, we introduce a method to control the amount of the axial strain, and therefore the emission wavelength, on a suspended Ge nanobeam by an applied voltage. We demonstrate, based on mechanical and electrical simulations, that axial strains over 4% can be achieved without experiencing any mechanical and/or electrical failure. We also show that the non-uniform strain distribution on the Ge nanobeam as a result of the applied voltage enhances light emission over 6 folds as compared to a Ge nanobeam with a uniform strain distribution. We anticipate that electrostatic actuation of Ge nanobeams provides a suitable platform for the realization of the on-chip tunable-wavelength infrared light sources that can be monolithically integrated on Si chips.