Micromachined Thermal Gas Sensors-A Review.

In recent years, there has been a growing desire to monitor and control harmful substances arising from industrial processes that impact upon our health and quality of life. This has led to a large market demand for gas sensors, which are commonly based on sensors that rely upon a chemical reaction with the target analyte. In contrast, thermal conductivity detectors are physical sensors that detect gases through a change in their thermal conductivity. Thermal conductivity gas sensors offer several advantages over their chemical (reactive) counterparts that include higher reproducibility, better stability, lower cost, lower power consumption, simpler construction, faster response time, longer lifetime, wide dynamic range, and smaller footprint. It is for these reasons, despite a poor selectivity, that they are gaining renewed interest after recent developments in MEMS-based silicon sensors allowing CMOS integration and smart application within the emerging Internet of Things (IoT). This timely review focuses on the state-of-the-art in thermal conductivity sensors; it contains a general introduction, theory of operation, interface electronics, use in commercial applications, and recent research developments. In addition, both steady-state and transient methods of operation are discussed with their relative advantages and disadvantages presented. Finally, some of recent innovations in thermal conductivity gas sensors are explored.

Miniaturized thermal acoustic gas sensor based on a CMOS microhotplate and MEMS microphone.

We present a miniaturised thermal acoustic gas sensor, fabricated using a CMOS microhotplate and MEMS microphone. The sensing mechanism is based on the detection of changes in the thermal acoustic conversion efficiency which is dependent on the physical properties of the gas. An active sensing element, consisting of a MEMS microphone, is used to detect the target gas while a reference element is used for acoustic noise compensation. Compared to current photoacoustic gas sensors, our sensor requires neither the use of gas-encapsulated microphones, nor that of optical filters. In addition, it has all the benefits of CMOS technology, including production scalability, low cost and miniaturization. Here we demonstrate its application for CO[Formula: see text] gas detection. The sensor could be used for gas leak detection, for example, in an industrial plant.

A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing.

The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 [Formula: see text]C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 [Formula: see text]C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.

Crosstalk Analysis of a CMOS Single Membrane Thermopile Detector Array.

We present a new experimental technique to characterise the crosstalk of a thermopile-based thermal imager, based on bi-directional electrical heating of thermopile elements. The new technique provides a significantly simpler and more reliable method to determine the crosstalk, compared to a more complex experimental setup with a laser source. The technique is used to characterise a novel single-chip array, fabricated on a single dielectric membrane. We propose a theoretical model to simulate the crosstalk, which shows good agreement with the experimental results. Our results allow a better understanding of the thermal effects in these devices, which are at the center of a rising market of industrial and consumer applications.

Smart CMOS mid-infrared sensor array.

We present a novel single-chip thermopile sensor array for mid-infrared room temperature imaging. The array is fabricated on a single complementary metal-oxide-semiconductor (CMOS) dielectric membrane, composed of single-crystal silicon (Si) p+ and n+ elements, and standard CMOS tungsten metal layers for thermopile cold junction heatsinking, significantly reducing the chip size and simplifying its processing. We demonstrate a 16×16 pixel device with 34 V/W responsivity and enhanced optical absorption in the 8-14 µm waveband, with a suitable performance for gesture recognition and people-counting applications. Our simple, low-cost sensor is an attractive on-chip array for a variety of applications in the mid-infrared spectral region.

Towards Integrated Mid-Infrared Gas Sensors.

Optical gas sensors play an increasingly important role in many applications. Sensing techniques based on mid-infrared absorption spectroscopy offer excellent stability, selectivity and sensitivity, for numerous possibilities expected for sensors integrated into mobile and wearable devices. Here we review recent progress towards the miniaturization and integration of optical gas sensors, with a focus on low-cost and low-power consumption devices.

Sensitivity Enhancement of Silicon-on-Insulator CMOS MEMS Thermal Hot-Film Flow Sensors by Minimizing Membrane Conductive Heat Losses.

Minimizing conductive heat losses in Micro-Electro-Mechanical-Systems (MEMS) thermal (hot-film) flow sensors is the key to minimize the sensors' power consumption and maximize their sensitivity. Through a comprehensive review of literature on MEMS thermal (calorimetric, time of flight, hot-film/hot-film) flow sensors published during the last two decades, we establish that for curtailing conductive heat losses in the sensors, researchers have either used low thermal conductivity substrate materials or, as a more effective solution, created low thermal conductivity membranes under the heaters/hot-films. However, no systematic experimental study exists that investigates the effect of membrane shape, membrane size, heater/hot-film length and M e m b r a n e (size) to H e a t e r (hot-film length) Ratio (MHR) on sensors' conductive heat losses. Therefore, in this paper we have provided experimental evidence of dependence of conductive heat losses in membrane based MEMS hot-film flow sensors on MHR by using eight MEMS hot-film flow sensors, fabricated in a 1 µm silicon-on-insulator (SOI) CMOS foundry, that are thermally isolated by square and circular membranes. Experimental results demonstrate that: (a) thermal resistance of both square and circular membrane hot-film sensors increases with increasing MHR, and (b) conduction losses in square membrane based hot-film flow sensors are lower than the sensors having circular membrane. The difference (or gain) in thermal resistance of square membrane hot-film flow sensors viz-a-viz the sensors on circular membrane, however, decreases with increasing MHR. At MHR = 2, this difference is 5.2%, which reduces to 3.0% and 2.6% at MHR = 3 and MHR = 4, respectively. The study establishes that for membrane based SOI CMOS MEMS hot-film sensors, the optimum MHR is 3.35 for square membranes and 3.30 for circular membranes, beyond which the gain in sensors' thermal efficiency (thermal resistance) is not economical due to the associated sharp increase in the sensors' (membrane) size, which makes sensors more expensive as well as fragile. This paper hence, provides a key guideline to MEMS researchers for designing the square and circular membranes-supported micro-machined thermal (hot-film) flow sensors that are thermally most-efficient, mechanically robust and economically viable.

LoRaWAN Battery-Free Wireless Sensors Network Designed for Structural Health Monitoring in the Construction Domain.

This paper addresses the practical implementation of a wireless sensors network designed to actualize cyber-physical systems that are dedicated to structural health monitoring applications in the construction domain. This network consists of a mesh grid composed of LoRaWAN battery-free wireless sensing nodes that collect physical data and communicating nodes that interface the sensing nodes with the digital world through the Internet. Two prototypes of sensing nodes were manufactured and are powered wirelessly by using a far-field wireless power transmission technique and only one dedicated RF energy source operating in the ISM 868 MHz frequency band. These sensing nodes can simultaneously perform temperature and relative humidity measurements and can transmit the measured data wirelessly over long-range distances by using the LoRa technology and the LoRaWAN protocol. Experimental results for a simplified network confirm that the periodicity of the measurements and data transmission of the sensing nodes can be controlled by the dedicated RF source (embedded in or just controlled by the associated communicating node), by tuning the radiated power density of the RF waves, and without any modification of the software or the hardware implemented in the sensing nodes.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)-0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

Towards a Graphene-Based Low Intensity Photon Counting Photodetector.

Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

A highly efficient CMOS nanoplasmonic crystal enhanced slow-wave thermal emitter improves infrared gas-sensing devices.

The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff's law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS process, and demonstrate its markedly improved practical use in a prototype non-dispersive infrared (NDIR) gas-sensing device. We show that the emission intensity of the thermal emitter at the CO(2) absorption wavelength is enhanced almost 4-fold compared to a standard non-plasmonic emitter, which enables a proportionate increase in the signal-to-noise ratio of the CO(2) gas sensor.

Low Power Resistive Oxygen Sensor Based on Sonochemical SrTi0.6Fe0.4O2.8 (STFO40).

The current paper reports on a sonochemical synthesis method for manufacturing nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8 (Sono-STFO40) powder. This powder is characterized using X ray-diffraction (XRD), Mössbauer spectroscopy and Scanning Electron Microscopy (SEM), and results are compared with commercially available SrTi0.4Fe0.6O2.8 (STFO60) powder. In order to manufacture resistive oxygen sensors, both Sono-STFO40 and STFO60 are deposited, by dip-pen nanolithography (DPN) method, on an SOI (Silicon-on-Insulator) micro-hotplate, employing a tungsten heater embedded within a dielectric membrane. Oxygen detection tests are performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 16% (v/v), at a constant heater temperature of 650 °C. The oxygen sensor, based on the Sono-STFO40 sensing layer, shows good sensitivity, low power consumption (80 mW), and short response time (25 s). These performance are comparable to those exhibited by state-of-the-art O2 sensors based on STFO60, thus proving Sono-STFO40 to be a material suitable for oxygen detection in harsh environments.

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate.

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 °C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol-gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 °C to 145 °C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems.

Post-CMOS wafer level growth of carbon nanotubes for low-cost microsensors--a proof of concept.

Here we demonstrate a novel technique to grow carbon nanotubes (CNTs) on addressable localized areas, at wafer level, on a fully processed CMOS substrate. The CNTs were grown using tungsten micro-heaters (local growth technique) at elevated temperature on wafer scale by connecting adjacent micro-heaters through metal tracks in the scribe lane. The electrical and optical characterization show that the CNTs are identical and reproducible. We believe this wafer level integration of CNTs with CMOS circuitry enables the low-cost mass production of CNT sensors, such as chemical sensors.