Harnessing a Dielectric/Plasma Photonic Crystal as an Optical Microwave Filter: Role of Defect Layers and External Magnetic Fields.

We investigate the transmittance spectrum of a multichannel filter composed of dielectric (A) and plasma (P) materials in the microwave region within the transfer matrix formalism. Two configurations of the proposed filter are studied under the influence of an applied magnetic field: (1) a periodic structure containing (A/P)N unit cells surrounded by air and (2) the introduction of a second dielectric material (D) acting as a defect layer to produce an (AP)N/2/D/(AP)N/2 structure. Our findings reveal that in the periodic case, the number of resonant states of the transmittance increases with number N; however, the observed blue and red shifts depend on the intensity and orientation of the applied magnetic field. We present contour plots of the transmission coefficients that show the effect of the incident angle on the shifts of the photonic band gaps. Furthermore, we find that the introduction of a defect layer generates additional resonant states and merges the central resonant peak into a miniband of resonances. Moreover, we show that the number of resonant peaks and their locations can be modulated by increasing the unit cell number, N, as well as increasing the width of the inserted defect layer. Our proposed structures enable the design of novel photonic filters using magnetized plasma materials operating in the microwave region.

Effects of Applied Magnetic Field on the Optical Properties and Binding Energies Spherical GaAs Quantum Dot with Donor Impurity.

The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties spherical GaAs quantum dot with donor impurity (DI). To accomplish this goal, we have used the diagonalization method to numerically solve the Schrödinger equation under the effective mass approximation for obtaining the electron energy levels and related electronic wave functions. The expressions used for evaluating linear, third-order nonlinear, and total optical absorption coefficients and relative refractive index changes were previously derived within the compact density matrix method. It has been shown here that the MF and DI impacts the characteristics of the absorption coefficients and the refractive index changes. This study's results will find application in optoelectronics and related areas.

Effect of the High-Frequency Laser Radiation on the Nonlinear Optical Properties of n-Type Double δ-Doped GaAs Quantum Wells.

In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of n-type double δ-doped GaAs quantum well is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the coefficients of nonlinear optical rectification and second and third harmonic generation are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of non-resonant intense laser field. The results show that the coefficients of nonlinear optical rectification and second and third harmonic generation are strongly affected by the non-resonant intense laser field.

Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.